JPH0535719B2 - - Google Patents

Info

Publication number
JPH0535719B2
JPH0535719B2 JP61228605A JP22860586A JPH0535719B2 JP H0535719 B2 JPH0535719 B2 JP H0535719B2 JP 61228605 A JP61228605 A JP 61228605A JP 22860586 A JP22860586 A JP 22860586A JP H0535719 B2 JPH0535719 B2 JP H0535719B2
Authority
JP
Japan
Prior art keywords
growth
group
gaas
compound
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61228605A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6385098A (ja
Inventor
Kazuo Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP22860586A priority Critical patent/JPS6385098A/ja
Publication of JPS6385098A publication Critical patent/JPS6385098A/ja
Publication of JPH0535719B2 publication Critical patent/JPH0535719B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP22860586A 1986-09-26 1986-09-26 ３−５族化合物半導体の気相成長方法 Granted JPS6385098A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22860586A JPS6385098A (ja) 1986-09-26 1986-09-26 ３−５族化合物半導体の気相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22860586A JPS6385098A (ja) 1986-09-26 1986-09-26 ３−５族化合物半導体の気相成長方法

Publications (2)

Publication Number Publication Date
JPS6385098A JPS6385098A (ja) 1988-04-15
JPH0535719B2 true JPH0535719B2 (enrdf_load_stackoverflow) 1993-05-27

Family

ID=16878968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22860586A Granted JPS6385098A (ja) 1986-09-26 1986-09-26 ３−５族化合物半導体の気相成長方法

Country Status (1)

Country Link
JP (1) JPS6385098A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
JP2009081192A (ja) * 2007-09-25 2009-04-16 Sumitomo Electric Ind Ltd 半導体光素子を作製する方法、及びｉｉｉ−ｖ化合物半導体結晶を成長する方法
JP2010251458A (ja) * 2009-04-14 2010-11-04 Sony Corp 半導体層およびその製造方法ならびに半導体レーザおよびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123072A (en) * 1977-04-01 1978-10-27 Nec Corp Vapor phase growth method of gaas

Also Published As

Publication number Publication date
JPS6385098A (ja) 1988-04-15

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