JPS6065787A - 転位のないケイ素単結晶ロツドの製造法 - Google Patents
転位のないケイ素単結晶ロツドの製造法Info
- Publication number
- JPS6065787A JPS6065787A JP59077625A JP7762584A JPS6065787A JP S6065787 A JPS6065787 A JP S6065787A JP 59077625 A JP59077625 A JP 59077625A JP 7762584 A JP7762584 A JP 7762584A JP S6065787 A JPS6065787 A JP S6065787A
- Authority
- JP
- Japan
- Prior art keywords
- rod
- single crystal
- pulling
- raw material
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 16
- 229910052710 silicon Inorganic materials 0.000 title claims description 16
- 239000010703 silicon Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims description 42
- 239000002994 raw material Substances 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 238000005191 phase separation Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 3
- 239000005052 trichlorosilane Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 210000002257 embryonic structure Anatomy 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3333960.0 | 1983-09-20 | ||
| DE19833333960 DE3333960A1 (de) | 1983-09-20 | 1983-09-20 | Verfahren zur herstellung von versetzungsfreien einkristallstaeben aus silicium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6065787A true JPS6065787A (ja) | 1985-04-15 |
| JPS647040B2 JPS647040B2 (en, 2012) | 1989-02-07 |
Family
ID=6209586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59077625A Granted JPS6065787A (ja) | 1983-09-20 | 1984-04-19 | 転位のないケイ素単結晶ロツドの製造法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4722764A (en, 2012) |
| EP (1) | EP0142666A3 (en, 2012) |
| JP (1) | JPS6065787A (en, 2012) |
| DE (1) | DE3333960A1 (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019210175A (ja) * | 2018-06-04 | 2019-12-12 | 信越化学工業株式会社 | 多結晶シリコンロッド |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4921026A (en) * | 1988-06-01 | 1990-05-01 | Union Carbide Chemicals And Plastics Company Inc. | Polycrystalline silicon capable of yielding long lifetime single crystalline silicon |
| JP2516823B2 (ja) * | 1990-02-28 | 1996-07-24 | 信越半導体株式会社 | 浮遊帯域融解法による単結晶シリコン製造用の棒状多結晶シリコン及びその製造方法 |
| DE69120326T2 (de) * | 1990-03-30 | 1996-12-12 | Sumitomo Sitix Corp | Verfahren zur Herstellung eines Siliziumeinkristalles |
| JP2874722B2 (ja) * | 1993-06-18 | 1999-03-24 | 信越半導体株式会社 | シリコン単結晶の成長方法及び装置 |
| JP3274246B2 (ja) * | 1993-08-23 | 2002-04-15 | コマツ電子金属株式会社 | エピタキシャルウェーハの製造方法 |
| US5935328A (en) * | 1997-11-25 | 1999-08-10 | Memc Electronic Materials, Inc. | Apparatus for use in crystal pulling |
| US6090198A (en) * | 1998-12-07 | 2000-07-18 | Seh America, Inc. | Method for reducing thermal shock in a seed crystal during growth of a crystalline ingot |
| US6514337B2 (en) | 2001-02-07 | 2003-02-04 | Seh America, Inc. | Method of growing large-diameter dislocation-free<110> crystalline ingots |
| JP5318365B2 (ja) * | 2007-04-24 | 2013-10-16 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | シリコン結晶素材及びこれを用いたｆｚシリコン単結晶の製造方法 |
| CN101717990A (zh) * | 2008-10-10 | 2010-06-02 | 江西赛维Ldk太阳能高科技有限公司 | 高纯多晶硅棒作为供料棒在单晶硅区域熔炼法中的应用以及制备方法 |
| JP6145093B2 (ja) | 2011-08-26 | 2017-06-07 | ハンター・ダグラス・インコーポレーテッド | 窓覆い用のコードなし格納式ローラシェード |
| EP3181734A1 (en) * | 2015-12-16 | 2017-06-21 | Total Marketing Services | Manufacturing method of a silicon single crystal and silicon wafer production facility |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1519868B2 (de) * | 1965-03-18 | 1971-07-29 | Siemens AG, 1000 Berlin u 8000 München | Verfahren zum herstellen einer faserstruktur in einem koerper aus einer halbleitenden verbindung |
| US3416898A (en) * | 1966-07-30 | 1968-12-17 | Nippon Electric Co | Method for growing high-melting-point single crystals and an apparatus therefor |
| DE2758888C2 (de) * | 1977-12-30 | 1983-09-22 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung reinster Siliciumeinkristalle |
| DE2808401C3 (de) * | 1978-02-27 | 1984-07-19 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Einstellen einer stabilen Schmelzzone beim tiegelfreien Zonenschmelzen eines Halbleiterkristallstabes |
| US4265859A (en) * | 1978-05-31 | 1981-05-05 | Energy Materials Corporation | Apparatus for producing semiconductor grade silicon and replenishing the melt of a crystal growth system |
| US4200621A (en) * | 1978-07-18 | 1980-04-29 | Motorola, Inc. | Sequential purification and crystal growth |
| US4270972A (en) * | 1980-03-31 | 1981-06-02 | Rockwell International Corporation | Method for controlled doping semiconductor material with highly volatile dopant |
| DE3210141A1 (de) * | 1982-03-19 | 1983-09-22 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von fuer insbesondere solarzellen verwendbarem silicium |
-
1983
- 1983-09-20 DE DE19833333960 patent/DE3333960A1/de not_active Withdrawn
-
1984
- 1984-04-19 JP JP59077625A patent/JPS6065787A/ja active Granted
- 1984-09-19 EP EP84111143A patent/EP0142666A3/de not_active Ceased
-
1986
- 1986-05-01 US US06/859,210 patent/US4722764A/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019210175A (ja) * | 2018-06-04 | 2019-12-12 | 信越化学工業株式会社 | 多結晶シリコンロッド |
| US12162762B2 (en) | 2018-06-04 | 2024-12-10 | Shin-Etsu Chemical Co., Ltd. | Polycrystalline silicon rod |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3333960A1 (de) | 1985-04-04 |
| JPS647040B2 (en, 2012) | 1989-02-07 |
| EP0142666A2 (de) | 1985-05-29 |
| US4722764A (en) | 1988-02-02 |
| EP0142666A3 (de) | 1987-07-01 |
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