JPS6060762A - バイポーラトランジスタの製造方法 - Google Patents

バイポーラトランジスタの製造方法

Info

Publication number
JPS6060762A
JPS6060762A JP58170156A JP17015683A JPS6060762A JP S6060762 A JPS6060762 A JP S6060762A JP 58170156 A JP58170156 A JP 58170156A JP 17015683 A JP17015683 A JP 17015683A JP S6060762 A JPS6060762 A JP S6060762A
Authority
JP
Japan
Prior art keywords
layer
type
base
polycrystalline silicon
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58170156A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0456455B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Goto
広志 後藤
Osamu Hideshima
秀島　修
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58170156A priority Critical patent/JPS6060762A/ja
Publication of JPS6060762A publication Critical patent/JPS6060762A/ja
Publication of JPH0456455B2 publication Critical patent/JPH0456455B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP58170156A 1983-09-13 1983-09-13 バイポーラトランジスタの製造方法 Granted JPS6060762A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58170156A JPS6060762A (ja) 1983-09-13 1983-09-13 バイポーラトランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58170156A JPS6060762A (ja) 1983-09-13 1983-09-13 バイポーラトランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS6060762A true JPS6060762A (ja) 1985-04-08
JPH0456455B2 JPH0456455B2 (enrdf_load_stackoverflow) 1992-09-08

Family

ID=15899717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58170156A Granted JPS6060762A (ja) 1983-09-13 1983-09-13 バイポーラトランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6060762A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58216463A (ja) * 1982-06-07 1983-12-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション バイポ−ラ・トランジスタ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58216463A (ja) * 1982-06-07 1983-12-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション バイポ−ラ・トランジスタ

Also Published As

Publication number Publication date
JPH0456455B2 (enrdf_load_stackoverflow) 1992-09-08

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