JPH0469423B2 - - Google Patents

Info

Publication number
JPH0469423B2
JPH0469423B2 JP58170155A JP17015583A JPH0469423B2 JP H0469423 B2 JPH0469423 B2 JP H0469423B2 JP 58170155 A JP58170155 A JP 58170155A JP 17015583 A JP17015583 A JP 17015583A JP H0469423 B2 JPH0469423 B2 JP H0469423B2
Authority
JP
Japan
Prior art keywords
layer
film
conductivity type
emitter
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58170155A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6060761A (ja
Inventor
Hiroshi Goto
Osamu Hideshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58170155A priority Critical patent/JPS6060761A/ja
Publication of JPS6060761A publication Critical patent/JPS6060761A/ja
Publication of JPH0469423B2 publication Critical patent/JPH0469423B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP58170155A 1983-09-13 1983-09-13 バイポーラトランジスタの製造方法 Granted JPS6060761A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58170155A JPS6060761A (ja) 1983-09-13 1983-09-13 バイポーラトランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58170155A JPS6060761A (ja) 1983-09-13 1983-09-13 バイポーラトランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS6060761A JPS6060761A (ja) 1985-04-08
JPH0469423B2 true JPH0469423B2 (enrdf_load_stackoverflow) 1992-11-06

Family

ID=15899701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58170155A Granted JPS6060761A (ja) 1983-09-13 1983-09-13 バイポーラトランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6060761A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62150748A (ja) * 1985-12-24 1987-07-04 Rohm Co Ltd 半導体装置の配線形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5843573A (ja) * 1981-09-08 1983-03-14 Matsushita Electric Ind Co Ltd バイポ−ラトランジスタ
US4495512A (en) * 1982-06-07 1985-01-22 International Business Machines Corporation Self-aligned bipolar transistor with inverted polycide base contact
EP0122004A3 (en) * 1983-03-08 1986-12-17 Trw Inc. Improved bipolar transistor construction

Also Published As

Publication number Publication date
JPS6060761A (ja) 1985-04-08

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