JPS6060736A - 半導体集積回路装置の製造方法 - Google Patents
半導体集積回路装置の製造方法Info
- Publication number
- JPS6060736A JPS6060736A JP16826783A JP16826783A JPS6060736A JP S6060736 A JPS6060736 A JP S6060736A JP 16826783 A JP16826783 A JP 16826783A JP 16826783 A JP16826783 A JP 16826783A JP S6060736 A JPS6060736 A JP S6060736A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- main surface
- oxide film
- oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 230000003647 oxidation Effects 0.000 claims abstract description 43
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 230000000994 depressogenic effect Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 16
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 5
- 230000003071 parasitic effect Effects 0.000 abstract description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 5
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000002955 isolation Methods 0.000 description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 229910052710 silicon Inorganic materials 0.000 description 25
- 239000010703 silicon Substances 0.000 description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- KVBCYCWRDBDGBG-UHFFFAOYSA-N azane;dihydrofluoride Chemical compound [NH4+].F.[F-] KVBCYCWRDBDGBG-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007127 saponification reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16826783A JPS6060736A (ja) | 1983-09-14 | 1983-09-14 | 半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16826783A JPS6060736A (ja) | 1983-09-14 | 1983-09-14 | 半導体集積回路装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6060736A true JPS6060736A (ja) | 1985-04-08 |
| JPH0420267B2 JPH0420267B2 (enrdf_load_stackoverflow) | 1992-04-02 |
Family
ID=15864843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16826783A Granted JPS6060736A (ja) | 1983-09-14 | 1983-09-14 | 半導体集積回路装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6060736A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0230160A (ja) * | 1988-07-19 | 1990-01-31 | Nec Corp | 半導体装置 |
| JPH11289006A (ja) * | 1998-03-02 | 1999-10-19 | Samsung Electronics Co Ltd | 集積回路にトレンチアイソレ―ションを形成する方法 |
| US8774367B2 (en) | 2008-10-22 | 2014-07-08 | Koninklijke Philips N.V. | Bearing within an X-ray tube |
-
1983
- 1983-09-14 JP JP16826783A patent/JPS6060736A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0230160A (ja) * | 1988-07-19 | 1990-01-31 | Nec Corp | 半導体装置 |
| JPH11289006A (ja) * | 1998-03-02 | 1999-10-19 | Samsung Electronics Co Ltd | 集積回路にトレンチアイソレ―ションを形成する方法 |
| US8774367B2 (en) | 2008-10-22 | 2014-07-08 | Koninklijke Philips N.V. | Bearing within an X-ray tube |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0420267B2 (enrdf_load_stackoverflow) | 1992-04-02 |
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