JPS6059754B2 - 超導電性装置 - Google Patents
超導電性装置Info
- Publication number
- JPS6059754B2 JPS6059754B2 JP50147529A JP14752975A JPS6059754B2 JP S6059754 B2 JPS6059754 B2 JP S6059754B2 JP 50147529 A JP50147529 A JP 50147529A JP 14752975 A JP14752975 A JP 14752975A JP S6059754 B2 JPS6059754 B2 JP S6059754B2
- Authority
- JP
- Japan
- Prior art keywords
- inductance
- thickness
- layer
- superconductor
- superconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002887 superconductor Substances 0.000 claims description 46
- 230000035515 penetration Effects 0.000 claims description 28
- 239000000463 material Substances 0.000 description 13
- 230000004907 flux Effects 0.000 description 10
- 230000006872 improvement Effects 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000012212 insulator Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 230000005291 magnetic effect Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 230000005298 paramagnetic effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000006386 memory function Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/825—Apparatus per se, device per se, or process of making or operating same
- Y10S505/873—Active solid-state device
- Y10S505/874—Active solid-state device with josephson junction, e.g. squid
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/537,802 US4028714A (en) | 1974-12-31 | 1974-12-31 | Ultralow-power, micro-miniaturized Josephson devices having high inductance |
| US537802 | 1974-12-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5184591A JPS5184591A (enExample) | 1976-07-23 |
| JPS6059754B2 true JPS6059754B2 (ja) | 1985-12-26 |
Family
ID=24144156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50147529A Expired JPS6059754B2 (ja) | 1974-12-31 | 1975-12-12 | 超導電性装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4028714A (enExample) |
| JP (1) | JPS6059754B2 (enExample) |
| CA (1) | CA1030272A (enExample) |
| DE (1) | DE2556777C2 (enExample) |
| FR (1) | FR2309987A1 (enExample) |
| GB (1) | GB1485655A (enExample) |
| IT (1) | IT1044748B (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5354598A (en) * | 1976-10-26 | 1978-05-18 | Nichimo Kk | Method of obtaining roe from fish |
| DE2840525A1 (de) * | 1977-09-26 | 1979-04-05 | Sperry Rand Corp | Supraleitende quanten-interferenz- einrichtung |
| US4525730A (en) * | 1982-11-29 | 1985-06-25 | International Business Machines Corporation | Buried junction Josephson interferometer |
| US5272358A (en) * | 1986-08-13 | 1993-12-21 | Hitachi, Ltd. | Superconducting device |
| GB2288094A (en) * | 1994-03-25 | 1995-10-04 | Secr Defence | Superconductive junction |
| US5939730A (en) * | 1996-11-04 | 1999-08-17 | Trw Inc. | Self-aligned thin barrier high temperature superconductor edge junction |
| US6885325B2 (en) * | 2002-05-24 | 2005-04-26 | D-Wave Systems, Inc. | Sub-flux quantum generator |
| US7615385B2 (en) | 2006-09-20 | 2009-11-10 | Hypres, Inc | Double-masking technique for increasing fabrication yield in superconducting electronics |
| JP6326379B2 (ja) | 2012-03-08 | 2018-05-16 | ディー−ウェイブ システムズ，インコーポレイテッド | 超伝導集積回路の製作のためのシステムおよび方法 |
| US9520180B1 (en) | 2014-03-11 | 2016-12-13 | Hypres, Inc. | System and method for cryogenic hybrid technology computing and memory |
| WO2016171875A1 (en) * | 2015-04-03 | 2016-10-27 | Massachusetts Institute Of Technology | Current crowding in three-terminal superconducting devices and related methods |
| WO2017136585A1 (en) | 2016-02-02 | 2017-08-10 | Massachusetts Institute Of Technology | Distributed nanowire sensor for single photon imaging |
| US11127893B2 (en) * | 2016-05-03 | 2021-09-21 | D-Wave Systems Inc. | Systems and methods for superconducting devices used in superconducting circuits and scalable computing |
| EP3577700B1 (en) | 2017-02-01 | 2022-03-30 | D-Wave Systems Inc. | Systems and methods for fabrication of superconducting integrated circuits |
| US11200947B2 (en) | 2018-02-05 | 2021-12-14 | Massachusetts Institute Of Technology | Superconducting nanowire-based programmable processor |
| US11105866B2 (en) | 2018-06-05 | 2021-08-31 | D-Wave Systems Inc. | Dynamical isolation of a cryogenic processor |
| US20200152851A1 (en) | 2018-11-13 | 2020-05-14 | D-Wave Systems Inc. | Systems and methods for fabricating superconducting integrated circuits |
| US12102017B2 (en) | 2019-02-15 | 2024-09-24 | D-Wave Systems Inc. | Kinetic inductance for couplers and compact qubits |
| US11839164B2 (en) | 2019-08-19 | 2023-12-05 | D-Wave Systems Inc. | Systems and methods for addressing devices in a superconducting circuit |
| US11790259B2 (en) | 2019-09-06 | 2023-10-17 | D-Wave Systems Inc. | Systems and methods for tuning capacitance in quantum devices |
| JP7705393B2 (ja) | 2019-12-05 | 2025-07-09 | ディー－ウェイブ システムズ インコーポレイテッド | 超伝導集積回路を製造するためのシステム及び方法 |
| US12376501B2 (en) | 2020-05-11 | 2025-07-29 | 1372934 B.C. Ltd. | Kinetic inductance devices, methods for fabricating kinetic inductance devices, and articles employing the same |
| CN112038479B (zh) * | 2020-09-04 | 2022-06-24 | 中国科学院上海微系统与信息技术研究所 | 电感可调的超导量子器件及其制备方法 |
| US12224750B2 (en) | 2021-09-03 | 2025-02-11 | 1372934 B.C. Ltd. | Topologically protected qubits, processors with topologically protected qubits, and methods for use of topologically protected qubits |
| US12388452B2 (en) | 2021-11-03 | 2025-08-12 | 1372934 B.C. Ltd. | Systems and methods for duty cycle compensation of a digital to analog converter (DAC) |
| US12392823B2 (en) | 2021-11-05 | 2025-08-19 | D-Wave Systems Inc. | Systems and methods for on-chip noise measurements |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3363200A (en) * | 1964-02-17 | 1968-01-09 | Ford Motor Co | Superconducting circuit components and method for use as transducing device |
| US3533018A (en) * | 1965-02-16 | 1970-10-06 | Ford Motor Co | Quantum wave current control in super-conductors |
| US3705393A (en) * | 1970-06-30 | 1972-12-05 | Ibm | Superconducting memory array using weak links |
| US3676718A (en) * | 1971-03-26 | 1972-07-11 | Bell Telephone Labor Inc | Supercurrent structures utilizing mobil flux vortices |
-
1974
- 1974-12-31 US US05/537,802 patent/US4028714A/en not_active Expired - Lifetime
-
1975
- 1975-10-20 CA CA238,131A patent/CA1030272A/en not_active Expired
- 1975-10-31 IT IT28864/75A patent/IT1044748B/it active
- 1975-11-21 FR FR7536646A patent/FR2309987A1/fr active Granted
- 1975-11-24 GB GB48154/75A patent/GB1485655A/en not_active Expired
- 1975-12-12 JP JP50147529A patent/JPS6059754B2/ja not_active Expired
- 1975-12-17 DE DE2556777A patent/DE2556777C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2309987A1 (fr) | 1976-11-26 |
| IT1044748B (it) | 1980-04-21 |
| US4028714A (en) | 1977-06-07 |
| CA1030272A (en) | 1978-04-25 |
| DE2556777A1 (de) | 1976-07-08 |
| DE2556777C2 (de) | 1982-08-26 |
| FR2309987B1 (enExample) | 1978-05-12 |
| JPS5184591A (enExample) | 1976-07-23 |
| GB1485655A (en) | 1977-09-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6059754B2 (ja) | 超導電性装置 | |
| US20030107033A1 (en) | Trilayer heterostructure junctions | |
| JP5152549B2 (ja) | ジョセフソン接合及びジョセフソンデバイス | |
| JP2552371B2 (ja) | 放射線検出素子およびジョセフソン素子 | |
| JP7578382B2 (ja) | ファンデルワールスコンデンサおよびこれを用いた量子ビット | |
| EP0538077B1 (en) | Super conducting quantum interference device | |
| RU2554612C2 (ru) | Высокочастотный сверхпроводящий элемент памяти | |
| US4539741A (en) | Josephson junction element and method of making the same | |
| US5721197A (en) | Controllable superconductor component | |
| JP2674680B2 (ja) | 超伝導超格子結晶デバイス | |
| US5883051A (en) | High Tc superconducting Josephson junction element | |
| US5834794A (en) | Superconducting device | |
| EP0381541B1 (en) | Superconductive magnetoresistive device | |
| JP3267353B2 (ja) | サブミクロン面積のエッジ接合を利用した弱接合型ジョセフソン素子の製造方法 | |
| US4525730A (en) | Buried junction Josephson interferometer | |
| JP2861235B2 (ja) | 超伝導素子 | |
| JPH0296386A (ja) | 超電導素子 | |
| Kusunoki et al. | Superconducting flux flow transistors with submicrometer structures | |
| JPH01300575A (ja) | 超電導素子 | |
| Irie et al. | High-gain DC SQUID magnetometers with NbN nanobridges | |
| JP2862706B2 (ja) | 超電導素子 | |
| Gamo et al. | RF characteristics of Nb vertical type microbridges | |
| JP2024541307A (ja) | 量子磁場受信デバイス | |
| JPH07273380A (ja) | 放射線検出素子 | |
| JP2760481B2 (ja) | 超電導出力バッファ回路素子 |