DE2556777C2 - Supraleitende Interferometerstruktur mit wenigstens zwei Josephson-Kontakten - Google Patents
Supraleitende Interferometerstruktur mit wenigstens zwei Josephson-KontaktenInfo
- Publication number
- DE2556777C2 DE2556777C2 DE2556777A DE2556777A DE2556777C2 DE 2556777 C2 DE2556777 C2 DE 2556777C2 DE 2556777 A DE2556777 A DE 2556777A DE 2556777 A DE2556777 A DE 2556777A DE 2556777 C2 DE2556777 C2 DE 2556777C2
- Authority
- DE
- Germany
- Prior art keywords
- superconducting
- layer
- thickness
- interferometer structure
- structure according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000035515 penetration Effects 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002887 superconductor Substances 0.000 description 11
- 230000004907 flux Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 238000012552 review Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000006386 memory function Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000000763 evoking effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000002650 habitual effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002611 lead compounds Chemical class 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/825—Apparatus per se, device per se, or process of making or operating same
- Y10S505/873—Active solid-state device
- Y10S505/874—Active solid-state device with josephson junction, e.g. squid
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/537,802 US4028714A (en) | 1974-12-31 | 1974-12-31 | Ultralow-power, micro-miniaturized Josephson devices having high inductance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2556777A1 DE2556777A1 (de) | 1976-07-08 |
| DE2556777C2 true DE2556777C2 (de) | 1982-08-26 |
Family
ID=24144156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2556777A Expired DE2556777C2 (de) | 1974-12-31 | 1975-12-17 | Supraleitende Interferometerstruktur mit wenigstens zwei Josephson-Kontakten |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4028714A (enExample) |
| JP (1) | JPS6059754B2 (enExample) |
| CA (1) | CA1030272A (enExample) |
| DE (1) | DE2556777C2 (enExample) |
| FR (1) | FR2309987A1 (enExample) |
| GB (1) | GB1485655A (enExample) |
| IT (1) | IT1044748B (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5354598A (en) * | 1976-10-26 | 1978-05-18 | Nichimo Kk | Method of obtaining roe from fish |
| DE2840525A1 (de) * | 1977-09-26 | 1979-04-05 | Sperry Rand Corp | Supraleitende quanten-interferenz- einrichtung |
| US4525730A (en) * | 1982-11-29 | 1985-06-25 | International Business Machines Corporation | Buried junction Josephson interferometer |
| US5272358A (en) * | 1986-08-13 | 1993-12-21 | Hitachi, Ltd. | Superconducting device |
| GB2288094A (en) * | 1994-03-25 | 1995-10-04 | Secr Defence | Superconductive junction |
| US5939730A (en) * | 1996-11-04 | 1999-08-17 | Trw Inc. | Self-aligned thin barrier high temperature superconductor edge junction |
| US6885325B2 (en) * | 2002-05-24 | 2005-04-26 | D-Wave Systems, Inc. | Sub-flux quantum generator |
| US7615385B2 (en) | 2006-09-20 | 2009-11-10 | Hypres, Inc | Double-masking technique for increasing fabrication yield in superconducting electronics |
| JP6326379B2 (ja) | 2012-03-08 | 2018-05-16 | ディー−ウェイブ システムズ，インコーポレイテッド | 超伝導集積回路の製作のためのシステムおよび方法 |
| US9520180B1 (en) | 2014-03-11 | 2016-12-13 | Hypres, Inc. | System and method for cryogenic hybrid technology computing and memory |
| WO2016171875A1 (en) * | 2015-04-03 | 2016-10-27 | Massachusetts Institute Of Technology | Current crowding in three-terminal superconducting devices and related methods |
| WO2017136585A1 (en) | 2016-02-02 | 2017-08-10 | Massachusetts Institute Of Technology | Distributed nanowire sensor for single photon imaging |
| US11127893B2 (en) * | 2016-05-03 | 2021-09-21 | D-Wave Systems Inc. | Systems and methods for superconducting devices used in superconducting circuits and scalable computing |
| EP3577700B1 (en) | 2017-02-01 | 2022-03-30 | D-Wave Systems Inc. | Systems and methods for fabrication of superconducting integrated circuits |
| US11200947B2 (en) | 2018-02-05 | 2021-12-14 | Massachusetts Institute Of Technology | Superconducting nanowire-based programmable processor |
| US11105866B2 (en) | 2018-06-05 | 2021-08-31 | D-Wave Systems Inc. | Dynamical isolation of a cryogenic processor |
| US20200152851A1 (en) | 2018-11-13 | 2020-05-14 | D-Wave Systems Inc. | Systems and methods for fabricating superconducting integrated circuits |
| US12102017B2 (en) | 2019-02-15 | 2024-09-24 | D-Wave Systems Inc. | Kinetic inductance for couplers and compact qubits |
| US11839164B2 (en) | 2019-08-19 | 2023-12-05 | D-Wave Systems Inc. | Systems and methods for addressing devices in a superconducting circuit |
| US11790259B2 (en) | 2019-09-06 | 2023-10-17 | D-Wave Systems Inc. | Systems and methods for tuning capacitance in quantum devices |
| JP7705393B2 (ja) | 2019-12-05 | 2025-07-09 | ディー－ウェイブ システムズ インコーポレイテッド | 超伝導集積回路を製造するためのシステム及び方法 |
| US12376501B2 (en) | 2020-05-11 | 2025-07-29 | 1372934 B.C. Ltd. | Kinetic inductance devices, methods for fabricating kinetic inductance devices, and articles employing the same |
| CN112038479B (zh) * | 2020-09-04 | 2022-06-24 | 中国科学院上海微系统与信息技术研究所 | 电感可调的超导量子器件及其制备方法 |
| US12224750B2 (en) | 2021-09-03 | 2025-02-11 | 1372934 B.C. Ltd. | Topologically protected qubits, processors with topologically protected qubits, and methods for use of topologically protected qubits |
| US12388452B2 (en) | 2021-11-03 | 2025-08-12 | 1372934 B.C. Ltd. | Systems and methods for duty cycle compensation of a digital to analog converter (DAC) |
| US12392823B2 (en) | 2021-11-05 | 2025-08-19 | D-Wave Systems Inc. | Systems and methods for on-chip noise measurements |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3363200A (en) * | 1964-02-17 | 1968-01-09 | Ford Motor Co | Superconducting circuit components and method for use as transducing device |
| US3533018A (en) * | 1965-02-16 | 1970-10-06 | Ford Motor Co | Quantum wave current control in super-conductors |
| US3705393A (en) * | 1970-06-30 | 1972-12-05 | Ibm | Superconducting memory array using weak links |
| US3676718A (en) * | 1971-03-26 | 1972-07-11 | Bell Telephone Labor Inc | Supercurrent structures utilizing mobil flux vortices |
-
1974
- 1974-12-31 US US05/537,802 patent/US4028714A/en not_active Expired - Lifetime
-
1975
- 1975-10-20 CA CA238,131A patent/CA1030272A/en not_active Expired
- 1975-10-31 IT IT28864/75A patent/IT1044748B/it active
- 1975-11-21 FR FR7536646A patent/FR2309987A1/fr active Granted
- 1975-11-24 GB GB48154/75A patent/GB1485655A/en not_active Expired
- 1975-12-12 JP JP50147529A patent/JPS6059754B2/ja not_active Expired
- 1975-12-17 DE DE2556777A patent/DE2556777C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2309987A1 (fr) | 1976-11-26 |
| IT1044748B (it) | 1980-04-21 |
| US4028714A (en) | 1977-06-07 |
| CA1030272A (en) | 1978-04-25 |
| DE2556777A1 (de) | 1976-07-08 |
| JPS6059754B2 (ja) | 1985-12-26 |
| FR2309987B1 (enExample) | 1978-05-12 |
| JPS5184591A (enExample) | 1976-07-23 |
| GB1485655A (en) | 1977-09-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8339 | Ceased/non-payment of the annual fee |