JPS6059739A - ドライクリ−ニング方法 - Google Patents

ドライクリ−ニング方法

Info

Publication number
JPS6059739A
JPS6059739A JP58168592A JP16859283A JPS6059739A JP S6059739 A JPS6059739 A JP S6059739A JP 58168592 A JP58168592 A JP 58168592A JP 16859283 A JP16859283 A JP 16859283A JP S6059739 A JPS6059739 A JP S6059739A
Authority
JP
Japan
Prior art keywords
dry cleaning
film
plasma
cleaning method
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58168592A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0452612B2 (enExample
Inventor
Kanetake Takasaki
高崎 金剛
Kenji Koyama
小山 堅二
Atsuhiro Tsukune
敦弘 筑根
Mikio Takagi
幹夫 高木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58168592A priority Critical patent/JPS6059739A/ja
Publication of JPS6059739A publication Critical patent/JPS6059739A/ja
Publication of JPH0452612B2 publication Critical patent/JPH0452612B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices

Landscapes

  • Drying Of Semiconductors (AREA)
JP58168592A 1983-09-13 1983-09-13 ドライクリ−ニング方法 Granted JPS6059739A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58168592A JPS6059739A (ja) 1983-09-13 1983-09-13 ドライクリ−ニング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58168592A JPS6059739A (ja) 1983-09-13 1983-09-13 ドライクリ−ニング方法

Publications (2)

Publication Number Publication Date
JPS6059739A true JPS6059739A (ja) 1985-04-06
JPH0452612B2 JPH0452612B2 (enExample) 1992-08-24

Family

ID=15870908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58168592A Granted JPS6059739A (ja) 1983-09-13 1983-09-13 ドライクリ−ニング方法

Country Status (1)

Country Link
JP (1) JPS6059739A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6341014A (ja) * 1986-08-06 1988-02-22 Sanyo Electric Co Ltd エピタキシヤル成長方法
JPS63253628A (ja) * 1987-04-10 1988-10-20 Hitachi Ltd プラズマ処理装置
JPS6464326A (en) * 1987-09-04 1989-03-10 Hitachi Ltd Plasma cleaning method
JPH01136970A (ja) * 1987-11-20 1989-05-30 Matsushita Electric Ind Co Ltd プラズマcvd装置のクリーニング方法
JPH01180969A (ja) * 1988-01-13 1989-07-18 Matsushita Electric Ind Co Ltd スパッタリング方法
US6852242B2 (en) 2001-02-23 2005-02-08 Zhi-Wen Sun Cleaning of multicompositional etchant residues
JP2009267250A (ja) * 2008-04-28 2009-11-12 Ulvac Japan Ltd プラズマエッチング方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5559723A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Plasma etching method
JPS5719569A (en) * 1980-07-09 1982-02-01 Mitsubishi Electric Corp Cooler for refrigerator
JPS5727024A (en) * 1980-07-25 1982-02-13 Mitsubishi Electric Corp Washing of reactor for plasma cvd method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5559723A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Plasma etching method
JPS5719569A (en) * 1980-07-09 1982-02-01 Mitsubishi Electric Corp Cooler for refrigerator
JPS5727024A (en) * 1980-07-25 1982-02-13 Mitsubishi Electric Corp Washing of reactor for plasma cvd method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6341014A (ja) * 1986-08-06 1988-02-22 Sanyo Electric Co Ltd エピタキシヤル成長方法
JPS63253628A (ja) * 1987-04-10 1988-10-20 Hitachi Ltd プラズマ処理装置
JPS6464326A (en) * 1987-09-04 1989-03-10 Hitachi Ltd Plasma cleaning method
JPH01136970A (ja) * 1987-11-20 1989-05-30 Matsushita Electric Ind Co Ltd プラズマcvd装置のクリーニング方法
JPH01180969A (ja) * 1988-01-13 1989-07-18 Matsushita Electric Ind Co Ltd スパッタリング方法
US6852242B2 (en) 2001-02-23 2005-02-08 Zhi-Wen Sun Cleaning of multicompositional etchant residues
JP2009267250A (ja) * 2008-04-28 2009-11-12 Ulvac Japan Ltd プラズマエッチング方法

Also Published As

Publication number Publication date
JPH0452612B2 (enExample) 1992-08-24

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