CN101101874A - 刻蚀氮化铝薄膜微图形的方法 - Google Patents
刻蚀氮化铝薄膜微图形的方法 Download PDFInfo
- Publication number
- CN101101874A CN101101874A CNA2007100437456A CN200710043745A CN101101874A CN 101101874 A CN101101874 A CN 101101874A CN A2007100437456 A CNA2007100437456 A CN A2007100437456A CN 200710043745 A CN200710043745 A CN 200710043745A CN 101101874 A CN101101874 A CN 101101874A
- Authority
- CN
- China
- Prior art keywords
- aluminium nitride
- thin film
- etching
- nitride thin
- micrographics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100437456A CN100570828C (zh) | 2007-07-12 | 2007-07-12 | 刻蚀氮化铝薄膜微图形的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100437456A CN100570828C (zh) | 2007-07-12 | 2007-07-12 | 刻蚀氮化铝薄膜微图形的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101101874A true CN101101874A (zh) | 2008-01-09 |
CN100570828C CN100570828C (zh) | 2009-12-16 |
Family
ID=39036072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007100437456A Expired - Fee Related CN100570828C (zh) | 2007-07-12 | 2007-07-12 | 刻蚀氮化铝薄膜微图形的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100570828C (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102951873A (zh) * | 2011-08-31 | 2013-03-06 | 深圳光启高等理工研究院 | 一种超材料介质基板材料及其制备方法 |
CN105259733A (zh) * | 2015-10-30 | 2016-01-20 | 上海交通大学 | 一种用于曲面图形化的柔性掩膜板制备方法 |
CN109712879A (zh) * | 2018-12-14 | 2019-05-03 | 北京遥测技术研究所 | 一种用于晶圆干法刻蚀工艺的金属掩膜形成方法 |
CN110098108A (zh) * | 2018-01-31 | 2019-08-06 | 苏州锐材半导体有限公司 | 一种聚酰亚胺微掩膜的制作方法 |
CN114758953A (zh) * | 2022-06-13 | 2022-07-15 | 合肥晶合集成电路股份有限公司 | 金属刻蚀方法 |
-
2007
- 2007-07-12 CN CNB2007100437456A patent/CN100570828C/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102951873A (zh) * | 2011-08-31 | 2013-03-06 | 深圳光启高等理工研究院 | 一种超材料介质基板材料及其制备方法 |
CN102951873B (zh) * | 2011-08-31 | 2015-07-15 | 深圳光启高等理工研究院 | 一种超材料介质基板材料及其制备方法 |
CN105259733A (zh) * | 2015-10-30 | 2016-01-20 | 上海交通大学 | 一种用于曲面图形化的柔性掩膜板制备方法 |
CN110098108A (zh) * | 2018-01-31 | 2019-08-06 | 苏州锐材半导体有限公司 | 一种聚酰亚胺微掩膜的制作方法 |
CN109712879A (zh) * | 2018-12-14 | 2019-05-03 | 北京遥测技术研究所 | 一种用于晶圆干法刻蚀工艺的金属掩膜形成方法 |
CN114758953A (zh) * | 2022-06-13 | 2022-07-15 | 合肥晶合集成电路股份有限公司 | 金属刻蚀方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100570828C (zh) | 2009-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9966250B2 (en) | Method to transfer two dimensional film grown on metal-coated wafer to the wafer itself in a face-to-face manner | |
CN100514582C (zh) | 干蚀刻氧化物半导体膜的方法 | |
US4865685A (en) | Dry etching of silicon carbide | |
CN100570828C (zh) | 刻蚀氮化铝薄膜微图形的方法 | |
CN103606514B (zh) | 基于GaN衬底CVD外延生长石墨烯的化学腐蚀转移方法 | |
Chung et al. | Fabrication and characterization of amorphous Si films by PECVD for MEMS | |
CN102881654A (zh) | 薄膜晶体管阵列基板及其制备方法、有源矩阵驱动显示装置 | |
CN204834654U (zh) | 基板载体 | |
CN108493105A (zh) | 二氧化硅薄膜及其制备方法 | |
CN101677062A (zh) | 硅化合物膜的干式刻蚀方法 | |
CN102674331A (zh) | 基于Ni膜退火的SiC与Cl2反应制备结构化石墨烯的方法 | |
CN105470193A (zh) | 金属钼材料的刻蚀方法 | |
CN100373588C (zh) | 一种交叉线阵列结构有机分子器件的制备方法 | |
Amirov et al. | Self-formation of a nanonet of fluorinated carbon nanowires on the Si surface by combined etching in fluorine-containing plasma | |
CN109809360A (zh) | 一种刻蚀方向可控的硅纳米孔结构及其制备方法 | |
CN102768956A (zh) | 一种制备边缘粗糙度较小的细线条的方法 | |
CN101956156B (zh) | 物理气相沉积线圈的处理方法及物理气相沉积线圈结构 | |
Guo et al. | PECVD SiC as a chemical resistant material in MEMS | |
CN104528631A (zh) | 一种硅片表面纳米孔结构的制备方法 | |
CN100452473C (zh) | 采用氧化硅填充-回刻的交叉阵列结构有机器件制备方法 | |
Chung et al. | High etch rates of poly-crystalline 3C-SiC films in magnetron enhanced CHF3 plasmas | |
CN108502840A (zh) | 一种高效率制备环状纳米间隙有序阵列的方法 | |
Zhang et al. | Effects of etching conditions on surface morphology of periodic inverted trapezoidal patterned Si (100) substrate | |
CN104617185B (zh) | 一种以绒面单晶硅片为基底的含硅量子点薄膜材料的制备方法 | |
TWI806656B (zh) | 半導體製程設備部件及其製作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: CHANGSHU YUHUA VACUUM EQUIPMENT CO., LTD. Free format text: FORMER OWNER: SHANGHAI JIAOTONG UNIVERSITY Effective date: 20120411 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 200240 MINHANG, SHANGHAI TO: 215500 SUZHOU, JIANGSU PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20120411 Address after: 215500 Jiangsu province Changshou City Yushan High-tech Industrial Park No. 70 Shenzhen Road Patentee after: Changshu Yuhua Vacuum Equipment Technology Co.,Ltd. Address before: 200240 Dongchuan Road, Shanghai, No. 800, No. Patentee before: Shanghai Jiao Tong University |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091216 Termination date: 20190712 |
|
CF01 | Termination of patent right due to non-payment of annual fee |