JPS605514A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS605514A
JPS605514A JP11284383A JP11284383A JPS605514A JP S605514 A JPS605514 A JP S605514A JP 11284383 A JP11284383 A JP 11284383A JP 11284383 A JP11284383 A JP 11284383A JP S605514 A JPS605514 A JP S605514A
Authority
JP
Japan
Prior art keywords
film
silicon oxide
oxide film
layer
aperture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11284383A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0524658B2 (cs
Inventor
Masao Iwase
政雄 岩瀬
Masaki Sato
正毅 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP11284383A priority Critical patent/JPS605514A/ja
Publication of JPS605514A publication Critical patent/JPS605514A/ja
Publication of JPH0524658B2 publication Critical patent/JPH0524658B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP11284383A 1983-06-24 1983-06-24 半導体装置の製造方法 Granted JPS605514A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11284383A JPS605514A (ja) 1983-06-24 1983-06-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11284383A JPS605514A (ja) 1983-06-24 1983-06-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS605514A true JPS605514A (ja) 1985-01-12
JPH0524658B2 JPH0524658B2 (cs) 1993-04-08

Family

ID=14596917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11284383A Granted JPS605514A (ja) 1983-06-24 1983-06-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS605514A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63190357A (ja) * 1987-02-02 1988-08-05 Matsushita Electronics Corp 半導体装置の製造方法
JPH02135584U (cs) * 1989-04-17 1990-11-09
JPH04127523A (ja) * 1990-09-19 1992-04-28 Nec Corp 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772321A (en) * 1980-10-24 1982-05-06 Toshiba Corp Manufacture of seiconductor device
JPS5818965A (ja) * 1981-07-28 1983-02-03 Toshiba Corp 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772321A (en) * 1980-10-24 1982-05-06 Toshiba Corp Manufacture of seiconductor device
JPS5818965A (ja) * 1981-07-28 1983-02-03 Toshiba Corp 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63190357A (ja) * 1987-02-02 1988-08-05 Matsushita Electronics Corp 半導体装置の製造方法
JPH02135584U (cs) * 1989-04-17 1990-11-09
JPH04127523A (ja) * 1990-09-19 1992-04-28 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0524658B2 (cs) 1993-04-08

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