JPS6049681A - 半導体受光装置 - Google Patents

半導体受光装置

Info

Publication number
JPS6049681A
JPS6049681A JP58157366A JP15736683A JPS6049681A JP S6049681 A JPS6049681 A JP S6049681A JP 58157366 A JP58157366 A JP 58157366A JP 15736683 A JP15736683 A JP 15736683A JP S6049681 A JPS6049681 A JP S6049681A
Authority
JP
Japan
Prior art keywords
superlattice structure
semiconductor
type
layer
layer superlattice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58157366A
Other languages
English (en)
Japanese (ja)
Other versions
JPH051629B2 (enrdf_load_stackoverflow
Inventor
Kunihiko Kodama
邦彦 児玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58157366A priority Critical patent/JPS6049681A/ja
Publication of JPS6049681A publication Critical patent/JPS6049681A/ja
Publication of JPH051629B2 publication Critical patent/JPH051629B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
JP58157366A 1983-08-29 1983-08-29 半導体受光装置 Granted JPS6049681A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58157366A JPS6049681A (ja) 1983-08-29 1983-08-29 半導体受光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58157366A JPS6049681A (ja) 1983-08-29 1983-08-29 半導体受光装置

Publications (2)

Publication Number Publication Date
JPS6049681A true JPS6049681A (ja) 1985-03-18
JPH051629B2 JPH051629B2 (enrdf_load_stackoverflow) 1993-01-08

Family

ID=15648080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58157366A Granted JPS6049681A (ja) 1983-08-29 1983-08-29 半導体受光装置

Country Status (1)

Country Link
JP (1) JPS6049681A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639162A (ja) * 1986-06-27 1988-01-14 アメリカン　テレフォン　アンド　テレグラフ　カムパニー 超格子を含む半導体デバイス及びその制御法
JPH0290575A (ja) * 1988-09-28 1990-03-30 Hitachi Ltd 半導体受光素子
US5471068A (en) * 1991-03-28 1995-11-28 Nec Corporation Semiconductor photodetector using avalanche multiplication and strained layers
EP0437633B1 (en) * 1989-08-04 2000-11-02 Canon Kabushiki Kaisha Photo-electric converter
US6326650B1 (en) 1995-08-03 2001-12-04 Jeremy Allam Method of forming a semiconductor structure
EP1435666A3 (en) * 2002-12-10 2008-12-31 General Electric Company Avalanche photodiode for use in harsh environments

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5580375A (en) * 1978-12-13 1980-06-17 Nippon Telegr & Teleph Corp <Ntt> Compound semiconductor photoreceptor
JPS6016474A (ja) * 1983-07-08 1985-01-28 Nec Corp ヘテロ多重接合型光検出器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5580375A (en) * 1978-12-13 1980-06-17 Nippon Telegr & Teleph Corp <Ntt> Compound semiconductor photoreceptor
JPS6016474A (ja) * 1983-07-08 1985-01-28 Nec Corp ヘテロ多重接合型光検出器

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639162A (ja) * 1986-06-27 1988-01-14 アメリカン　テレフォン　アンド　テレグラフ　カムパニー 超格子を含む半導体デバイス及びその制御法
JPH0290575A (ja) * 1988-09-28 1990-03-30 Hitachi Ltd 半導体受光素子
EP0437633B1 (en) * 1989-08-04 2000-11-02 Canon Kabushiki Kaisha Photo-electric converter
US5471068A (en) * 1991-03-28 1995-11-28 Nec Corporation Semiconductor photodetector using avalanche multiplication and strained layers
US6326650B1 (en) 1995-08-03 2001-12-04 Jeremy Allam Method of forming a semiconductor structure
US6436784B1 (en) 1995-08-03 2002-08-20 Hitachi Europe Limited Method of forming semiconductor structure
EP1435666A3 (en) * 2002-12-10 2008-12-31 General Electric Company Avalanche photodiode for use in harsh environments
KR101025186B1 (ko) 2002-12-10 2011-03-31 제너럴 일렉트릭 캄파니 거친 환경에 사용하기 위한 애벌런치 포토다이오드

Also Published As

Publication number Publication date
JPH051629B2 (enrdf_load_stackoverflow) 1993-01-08

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