JPS6047752B2 - 擦像管タ−ゲット - Google Patents
擦像管タ−ゲットInfo
- Publication number
- JPS6047752B2 JPS6047752B2 JP50101400A JP10140075A JPS6047752B2 JP S6047752 B2 JPS6047752 B2 JP S6047752B2 JP 50101400 A JP50101400 A JP 50101400A JP 10140075 A JP10140075 A JP 10140075A JP S6047752 B2 JPS6047752 B2 JP S6047752B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- cdte
- image pickup
- tube target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50101400A JPS6047752B2 (ja) | 1975-08-20 | 1975-08-20 | 擦像管タ−ゲット |
| AU16541/76A AU491834B2 (en) | 1975-08-20 | 1976-08-04 | Photoconductor element and method of making the element |
| US05/712,368 US4068253A (en) | 1975-08-20 | 1976-08-06 | Photoconductor element and method of making the element |
| DE19762636992 DE2636992A1 (de) | 1975-08-20 | 1976-08-13 | Photoleiterelement und verfahren zur herstellung des elements |
| CA259,133A CA1086547A (en) | 1975-08-20 | 1976-08-16 | Photoconductor element with superimposed layers of ca te and zn te containing in |
| FR7625232A FR2321766A1 (fr) | 1975-08-20 | 1976-08-19 | Element photoconducteur et procede d'obtention |
| NL7609315A NL7609315A (nl) | 1975-08-20 | 1976-08-20 | Fotogeleidend element en werkwijze voor de ver- vaardiging daarvan. |
| GB3546776A GB1553686A (en) | 1975-08-20 | 1976-08-26 | Load dependet brake pressure regulators for vehicle brake systems |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50101400A JPS6047752B2 (ja) | 1975-08-20 | 1975-08-20 | 擦像管タ−ゲット |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5224483A JPS5224483A (en) | 1977-02-23 |
| JPS6047752B2 true JPS6047752B2 (ja) | 1985-10-23 |
Family
ID=14299673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50101400A Expired JPS6047752B2 (ja) | 1975-08-20 | 1975-08-20 | 擦像管タ−ゲット |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4068253A (enExample) |
| JP (1) | JPS6047752B2 (enExample) |
| CA (1) | CA1086547A (enExample) |
| DE (1) | DE2636992A1 (enExample) |
| FR (1) | FR2321766A1 (enExample) |
| NL (1) | NL7609315A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4266334A (en) * | 1979-07-25 | 1981-05-12 | Rca Corporation | Manufacture of thinned substrate imagers |
| JPS56147343A (en) * | 1980-04-17 | 1981-11-16 | Matsushita Electric Ind Co Ltd | Manufacture of target for image pickup tube |
| SU915683A1 (ru) * | 1980-10-23 | 1985-10-23 | Fizicheskoj I Im P N Lebedeva | ПРЕОБРАЗОВАТЕЛЬ ОПТИЧЕСКОГО ИЗЛУЧЕНИЯ в электрический сигнал на основе структуры |
| JPS58184240A (ja) * | 1982-04-20 | 1983-10-27 | Matsushita Electric Ind Co Ltd | 撮像管タ−ゲツト |
| US4689650A (en) * | 1985-10-03 | 1987-08-25 | The United States Of America As Represented By The Secretary Of The Army | Infrared epitaxial detector structure and method of making same |
| EP0317343B1 (en) * | 1987-11-20 | 1995-07-05 | Canon Kabushiki Kaisha | Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, Te, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material |
| US7014702B2 (en) * | 2000-05-31 | 2006-03-21 | Pirelli Cavi E Sistemi S.P.A. | Method and apparatus for preparation of binary and higher order compounds and devices fabricated using same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5240809B2 (enExample) * | 1972-04-07 | 1977-10-14 | ||
| CA1024734A (en) * | 1973-03-30 | 1978-01-24 | Yukimasa Kuramoto | Photoconductor element |
| JPS5052927A (enExample) * | 1973-09-10 | 1975-05-10 | ||
| JPS5419127B2 (enExample) * | 1974-06-21 | 1979-07-12 |
-
1975
- 1975-08-20 JP JP50101400A patent/JPS6047752B2/ja not_active Expired
-
1976
- 1976-08-06 US US05/712,368 patent/US4068253A/en not_active Expired - Lifetime
- 1976-08-13 DE DE19762636992 patent/DE2636992A1/de not_active Ceased
- 1976-08-16 CA CA259,133A patent/CA1086547A/en not_active Expired
- 1976-08-19 FR FR7625232A patent/FR2321766A1/fr active Granted
- 1976-08-20 NL NL7609315A patent/NL7609315A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2636992A1 (de) | 1977-02-24 |
| FR2321766B1 (enExample) | 1979-07-20 |
| AU1654176A (en) | 1978-02-09 |
| US4068253A (en) | 1978-01-10 |
| FR2321766A1 (fr) | 1977-03-18 |
| JPS5224483A (en) | 1977-02-23 |
| CA1086547A (en) | 1980-09-30 |
| NL7609315A (nl) | 1977-02-22 |
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