FR2321766A1 - Element photoconducteur et procede d'obtention - Google Patents

Element photoconducteur et procede d'obtention

Info

Publication number
FR2321766A1
FR2321766A1 FR7625232A FR7625232A FR2321766A1 FR 2321766 A1 FR2321766 A1 FR 2321766A1 FR 7625232 A FR7625232 A FR 7625232A FR 7625232 A FR7625232 A FR 7625232A FR 2321766 A1 FR2321766 A1 FR 2321766A1
Authority
FR
France
Prior art keywords
obtaining
photoconductive element
photoconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7625232A
Other languages
English (en)
French (fr)
Other versions
FR2321766B1 (enExample
Inventor
Shinji Fujiwara
Takuo Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of FR2321766A1 publication Critical patent/FR2321766A1/fr
Application granted granted Critical
Publication of FR2321766B1 publication Critical patent/FR2321766B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
FR7625232A 1975-08-20 1976-08-19 Element photoconducteur et procede d'obtention Granted FR2321766A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50101400A JPS6047752B2 (ja) 1975-08-20 1975-08-20 擦像管タ−ゲット

Publications (2)

Publication Number Publication Date
FR2321766A1 true FR2321766A1 (fr) 1977-03-18
FR2321766B1 FR2321766B1 (enExample) 1979-07-20

Family

ID=14299673

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7625232A Granted FR2321766A1 (fr) 1975-08-20 1976-08-19 Element photoconducteur et procede d'obtention

Country Status (6)

Country Link
US (1) US4068253A (enExample)
JP (1) JPS6047752B2 (enExample)
CA (1) CA1086547A (enExample)
DE (1) DE2636992A1 (enExample)
FR (1) FR2321766A1 (enExample)
NL (1) NL7609315A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4266334A (en) * 1979-07-25 1981-05-12 Rca Corporation Manufacture of thinned substrate imagers
JPS56147343A (en) * 1980-04-17 1981-11-16 Matsushita Electric Ind Co Ltd Manufacture of target for image pickup tube
SU915683A1 (ru) * 1980-10-23 1985-10-23 Fizicheskoj I Im P N Lebedeva ПРЕОБРАЗОВАТЕЛЬ ОПТИЧЕСКОГО ИЗЛУЧЕНИЯ в электрический сигнал на основе структуры
JPS58184240A (ja) * 1982-04-20 1983-10-27 Matsushita Electric Ind Co Ltd 撮像管タ−ゲツト
US4689650A (en) * 1985-10-03 1987-08-25 The United States Of America As Represented By The Secretary Of The Army Infrared epitaxial detector structure and method of making same
EP0317343B1 (en) * 1987-11-20 1995-07-05 Canon Kabushiki Kaisha Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, Te, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material
US7014702B2 (en) * 2000-05-31 2006-03-21 Pirelli Cavi E Sistemi S.P.A. Method and apparatus for preparation of binary and higher order compounds and devices fabricated using same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240809B2 (enExample) * 1972-04-07 1977-10-14
CA1024734A (en) * 1973-03-30 1978-01-24 Yukimasa Kuramoto Photoconductor element
JPS5052927A (enExample) * 1973-09-10 1975-05-10
JPS5419127B2 (enExample) * 1974-06-21 1979-07-12

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
DE2636992A1 (de) 1977-02-24
FR2321766B1 (enExample) 1979-07-20
AU1654176A (en) 1978-02-09
US4068253A (en) 1978-01-10
JPS5224483A (en) 1977-02-23
JPS6047752B2 (ja) 1985-10-23
CA1086547A (en) 1980-09-30
NL7609315A (nl) 1977-02-22

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Legal Events

Date Code Title Description
ST Notification of lapse