CA1086547A - Photoconductor element with superimposed layers of ca te and zn te containing in - Google Patents

Photoconductor element with superimposed layers of ca te and zn te containing in

Info

Publication number
CA1086547A
CA1086547A CA259,133A CA259133A CA1086547A CA 1086547 A CA1086547 A CA 1086547A CA 259133 A CA259133 A CA 259133A CA 1086547 A CA1086547 A CA 1086547A
Authority
CA
Canada
Prior art keywords
layer
element according
photoconductor element
photoconductor
cdte
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA259,133A
Other languages
English (en)
French (fr)
Inventor
Takuo Shibata
Shinji Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of CA1086547A publication Critical patent/CA1086547A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
CA259,133A 1975-08-20 1976-08-16 Photoconductor element with superimposed layers of ca te and zn te containing in Expired CA1086547A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP50101400A JPS6047752B2 (ja) 1975-08-20 1975-08-20 擦像管タ−ゲット
JP50-101400/1975 1975-08-20

Publications (1)

Publication Number Publication Date
CA1086547A true CA1086547A (en) 1980-09-30

Family

ID=14299673

Family Applications (1)

Application Number Title Priority Date Filing Date
CA259,133A Expired CA1086547A (en) 1975-08-20 1976-08-16 Photoconductor element with superimposed layers of ca te and zn te containing in

Country Status (6)

Country Link
US (1) US4068253A (enExample)
JP (1) JPS6047752B2 (enExample)
CA (1) CA1086547A (enExample)
DE (1) DE2636992A1 (enExample)
FR (1) FR2321766A1 (enExample)
NL (1) NL7609315A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4266334A (en) * 1979-07-25 1981-05-12 Rca Corporation Manufacture of thinned substrate imagers
JPS56147343A (en) * 1980-04-17 1981-11-16 Matsushita Electric Ind Co Ltd Manufacture of target for image pickup tube
SU915683A1 (ru) * 1980-10-23 1985-10-23 Fizicheskoj I Im P N Lebedeva ПРЕОБРАЗОВАТЕЛЬ ОПТИЧЕСКОГО ИЗЛУЧЕНИЯ в электрический сигнал на основе структуры
JPS58184240A (ja) * 1982-04-20 1983-10-27 Matsushita Electric Ind Co Ltd 撮像管タ−ゲツト
US4689650A (en) * 1985-10-03 1987-08-25 The United States Of America As Represented By The Secretary Of The Army Infrared epitaxial detector structure and method of making same
EP0317343B1 (en) * 1987-11-20 1995-07-05 Canon Kabushiki Kaisha Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, Te, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material
US7014702B2 (en) * 2000-05-31 2006-03-21 Pirelli Cavi E Sistemi S.P.A. Method and apparatus for preparation of binary and higher order compounds and devices fabricated using same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240809B2 (enExample) * 1972-04-07 1977-10-14
CA1024734A (en) * 1973-03-30 1978-01-24 Yukimasa Kuramoto Photoconductor element
JPS5052927A (enExample) * 1973-09-10 1975-05-10
JPS5419127B2 (enExample) * 1974-06-21 1979-07-12

Also Published As

Publication number Publication date
DE2636992A1 (de) 1977-02-24
FR2321766B1 (enExample) 1979-07-20
AU1654176A (en) 1978-02-09
US4068253A (en) 1978-01-10
FR2321766A1 (fr) 1977-03-18
JPS5224483A (en) 1977-02-23
JPS6047752B2 (ja) 1985-10-23
NL7609315A (nl) 1977-02-22

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Legal Events

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