JPS6047000A - 炭化珪素ウイスカ−の製造方法 - Google Patents

炭化珪素ウイスカ−の製造方法

Info

Publication number
JPS6047000A
JPS6047000A JP58154038A JP15403883A JPS6047000A JP S6047000 A JPS6047000 A JP S6047000A JP 58154038 A JP58154038 A JP 58154038A JP 15403883 A JP15403883 A JP 15403883A JP S6047000 A JPS6047000 A JP S6047000A
Authority
JP
Japan
Prior art keywords
silicon carbide
carbon
mixture
carbide whiskers
containing mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58154038A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6410480B2 (enrdf_load_stackoverflow
Inventor
Hideaki Miyashita
宮下　英晃
Kazuyoshi Isotani
磯谷　計嘉
Kensaku Maruyama
丸山　謙作
Norihiro Murakawa
紀博 村川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP58154038A priority Critical patent/JPS6047000A/ja
Publication of JPS6047000A publication Critical patent/JPS6047000A/ja
Publication of JPS6410480B2 publication Critical patent/JPS6410480B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
JP58154038A 1983-08-25 1983-08-25 炭化珪素ウイスカ−の製造方法 Granted JPS6047000A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58154038A JPS6047000A (ja) 1983-08-25 1983-08-25 炭化珪素ウイスカ−の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58154038A JPS6047000A (ja) 1983-08-25 1983-08-25 炭化珪素ウイスカ−の製造方法

Publications (2)

Publication Number Publication Date
JPS6047000A true JPS6047000A (ja) 1985-03-14
JPS6410480B2 JPS6410480B2 (enrdf_load_stackoverflow) 1989-02-21

Family

ID=15575553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58154038A Granted JPS6047000A (ja) 1983-08-25 1983-08-25 炭化珪素ウイスカ−の製造方法

Country Status (1)

Country Link
JP (1) JPS6047000A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6410480B2 (enrdf_load_stackoverflow) 1989-02-21

Similar Documents

Publication Publication Date Title
US3246950A (en) Method of preparing fibrous silicon carbide
WO1983004188A1 (en) Process for manufacturing metal carbides and their precursors
US3933984A (en) Process of manufacturing whisker crystalline silicon carbide
Huang et al. In situ growth of silicon carbide nanowires from anthracite surfaces
JPH02289497A (ja) 炭化珪素ホイスカーの製造プロセス及び種晶剤
JPH03126610A (ja) 炭化物化合物及びその製造方法
Astrova et al. Interaction of fluorocarbon with silicon monoxide and processes of SiC nanowire formation
JPS5939708A (ja) 炭化けい素微粉末の製造方法
JPS6047000A (ja) 炭化珪素ウイスカ−の製造方法
JPS60118615A (ja) 含炭素組成物の製造方法
JP2519347B2 (ja) 炭化物化合物製造方法
JPH0380759B2 (enrdf_load_stackoverflow)
JPS6016809A (ja) 炭化珪素ウイスカ−の製造方法
JPS59121198A (ja) 炭化ケイ素ウイスカ−の製造法
JPS60200811A (ja) 窒化ホウ素の製造法
CA1214309A (en) Process for preparing metal carbides and precursors thereof
JPS5983922A (ja) 炭化ケイ素粉の製造法
JP2916303B2 (ja) 含炭素組成物
JPS63147811A (ja) ＳｉＣ微粉末の製造方法
JPS62162697A (ja) 炭化ケイ素ウイスカ−の製造方法
JPS5891018A (ja) 窒化物微粉末の製造方法
JPS61101500A (ja) 炭化ケイ素ウイスカ−の製造法
JPH03187998A (ja) 窒化アルミニウムウィスカーの製造方法
JPS62162695A (ja) 窒化ケイ素ウイスカ−の製造方法
JPS59102871A (ja) 新規含炭素混合物粉末