JPS6037119A - プラズマ気相反応装置 - Google Patents
プラズマ気相反応装置Info
- Publication number
- JPS6037119A JPS6037119A JP58145266A JP14526683A JPS6037119A JP S6037119 A JPS6037119 A JP S6037119A JP 58145266 A JP58145266 A JP 58145266A JP 14526683 A JP14526683 A JP 14526683A JP S6037119 A JPS6037119 A JP S6037119A
- Authority
- JP
- Japan
- Prior art keywords
- opened
- electrode
- region
- electrodes
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 7
- 239000012808 vapor phase Substances 0.000 title claims description 7
- 238000010574 gas phase reaction Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 11
- 230000005684 electric field Effects 0.000 abstract description 6
- 239000010453 quartz Substances 0.000 abstract description 6
- 239000012141 concentrate Substances 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 29
- 239000007789 gas Substances 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58145266A JPS6037119A (ja) | 1983-08-08 | 1983-08-08 | プラズマ気相反応装置 |
| JP5061237A JP2564748B2 (ja) | 1983-08-08 | 1993-02-26 | プラズマ気相反応装置およびプラズマ気相反応方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58145266A JPS6037119A (ja) | 1983-08-08 | 1983-08-08 | プラズマ気相反応装置 |
| JP5061237A JP2564748B2 (ja) | 1983-08-08 | 1993-02-26 | プラズマ気相反応装置およびプラズマ気相反応方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5061237A Division JP2564748B2 (ja) | 1983-08-08 | 1993-02-26 | プラズマ気相反応装置およびプラズマ気相反応方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6037119A true JPS6037119A (ja) | 1985-02-26 |
| JPH0546094B2 JPH0546094B2 (cg-RX-API-DMAC10.html) | 1993-07-13 |
Family
ID=26402288
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58145266A Granted JPS6037119A (ja) | 1983-08-08 | 1983-08-08 | プラズマ気相反応装置 |
| JP5061237A Expired - Lifetime JP2564748B2 (ja) | 1983-08-08 | 1993-02-26 | プラズマ気相反応装置およびプラズマ気相反応方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5061237A Expired - Lifetime JP2564748B2 (ja) | 1983-08-08 | 1993-02-26 | プラズマ気相反応装置およびプラズマ気相反応方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JPS6037119A (cg-RX-API-DMAC10.html) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05144595A (ja) * | 1991-11-22 | 1993-06-11 | Semiconductor Energy Lab Co Ltd | プラズマ処理装置 |
| JPH0620976A (ja) * | 1983-08-08 | 1994-01-28 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応装置およびプラズマ気相反応方法 |
| JPH06140347A (ja) * | 1993-05-13 | 1994-05-20 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10392135B2 (en) | 2015-03-30 | 2019-08-27 | Worldvu Satellites Limited | Satellite radiator panels with combined stiffener/heat pipe |
| CN112041381A (zh) | 2018-04-26 | 2020-12-04 | 优泊公司 | 多孔拉伸膜和印刷用膜 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842226A (ja) * | 1981-09-07 | 1983-03-11 | Nec Corp | プラズマ半導体製造装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4226897A (en) * | 1977-12-05 | 1980-10-07 | Plasma Physics Corporation | Method of forming semiconducting materials and barriers |
| JPS6032972B2 (ja) * | 1977-12-09 | 1985-07-31 | 株式会社日立製作所 | エツチング装置 |
| JPS5841658B2 (ja) * | 1979-06-15 | 1983-09-13 | パイオニア株式会社 | ドライエッチング装置 |
| US4342901A (en) * | 1980-08-11 | 1982-08-03 | Eaton Corporation | Plasma etching electrode |
| JPS6037118A (ja) * | 1983-08-08 | 1985-02-26 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応方法 |
| JPS6037119A (ja) * | 1983-08-08 | 1985-02-26 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応装置 |
-
1983
- 1983-08-08 JP JP58145266A patent/JPS6037119A/ja active Granted
-
1993
- 1993-02-26 JP JP5061237A patent/JP2564748B2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842226A (ja) * | 1981-09-07 | 1983-03-11 | Nec Corp | プラズマ半導体製造装置 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0620976A (ja) * | 1983-08-08 | 1994-01-28 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応装置およびプラズマ気相反応方法 |
| JPH05144595A (ja) * | 1991-11-22 | 1993-06-11 | Semiconductor Energy Lab Co Ltd | プラズマ処理装置 |
| JPH06140347A (ja) * | 1993-05-13 | 1994-05-20 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2564748B2 (ja) | 1996-12-18 |
| JPH0620976A (ja) | 1994-01-28 |
| JPH0546094B2 (cg-RX-API-DMAC10.html) | 1993-07-13 |
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