JPS6034013A - 固体薄膜の製造方法 - Google Patents
固体薄膜の製造方法Info
- Publication number
- JPS6034013A JPS6034013A JP14278783A JP14278783A JPS6034013A JP S6034013 A JPS6034013 A JP S6034013A JP 14278783 A JP14278783 A JP 14278783A JP 14278783 A JP14278783 A JP 14278783A JP S6034013 A JPS6034013 A JP S6034013A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- chamber
- molecules
- energy
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 13
- 239000007787 solid Substances 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000006243 chemical reaction Methods 0.000 claims abstract description 21
- 150000002500 ions Chemical class 0.000 claims abstract description 8
- 239000002994 raw material Substances 0.000 claims description 16
- 230000005284 excitation Effects 0.000 claims description 4
- 239000000284 extract Substances 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 63
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 16
- 239000000758 substrate Substances 0.000 abstract description 14
- 229910052786 argon Inorganic materials 0.000 abstract description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 7
- 229910000077 silane Inorganic materials 0.000 abstract description 7
- 238000000354 decomposition reaction Methods 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 229910052724 xenon Inorganic materials 0.000 abstract description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14278783A JPS6034013A (ja) | 1983-08-04 | 1983-08-04 | 固体薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14278783A JPS6034013A (ja) | 1983-08-04 | 1983-08-04 | 固体薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6034013A true JPS6034013A (ja) | 1985-02-21 |
| JPH0459769B2 JPH0459769B2 (enrdf_load_stackoverflow) | 1992-09-24 |
Family
ID=15323591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14278783A Granted JPS6034013A (ja) | 1983-08-04 | 1983-08-04 | 固体薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6034013A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62174382A (ja) * | 1986-01-27 | 1987-07-31 | Shindengen Electric Mfg Co Ltd | 気相より金属合金を堆積させる方法および装置 |
| JPS6446936A (en) * | 1987-08-17 | 1989-02-21 | Nippon Telegraph & Telephone | Growth method of thin film |
| JPH0420901U (enrdf_load_stackoverflow) * | 1990-06-12 | 1992-02-21 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5362982A (en) * | 1976-11-17 | 1978-06-05 | Toshiba Corp | Plasma cvd apparatus |
| JPS5667538A (en) * | 1979-11-06 | 1981-06-06 | Fujitsu Ltd | Plasma oxidation method |
-
1983
- 1983-08-04 JP JP14278783A patent/JPS6034013A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5362982A (en) * | 1976-11-17 | 1978-06-05 | Toshiba Corp | Plasma cvd apparatus |
| JPS5667538A (en) * | 1979-11-06 | 1981-06-06 | Fujitsu Ltd | Plasma oxidation method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62174382A (ja) * | 1986-01-27 | 1987-07-31 | Shindengen Electric Mfg Co Ltd | 気相より金属合金を堆積させる方法および装置 |
| JPS6446936A (en) * | 1987-08-17 | 1989-02-21 | Nippon Telegraph & Telephone | Growth method of thin film |
| JPH0420901U (enrdf_load_stackoverflow) * | 1990-06-12 | 1992-02-21 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0459769B2 (enrdf_load_stackoverflow) | 1992-09-24 |
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