JPS60261130A - 半導体の箔を製造する方法及びその装置 - Google Patents

半導体の箔を製造する方法及びその装置

Info

Publication number
JPS60261130A
JPS60261130A JP60106217A JP10621785A JPS60261130A JP S60261130 A JPS60261130 A JP S60261130A JP 60106217 A JP60106217 A JP 60106217A JP 10621785 A JP10621785 A JP 10621785A JP S60261130 A JPS60261130 A JP S60261130A
Authority
JP
Japan
Prior art keywords
support
molded member
silicon
foil
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60106217A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0347572B2 (US06373033-20020416-M00035.png
Inventor
インゴ・シユビルトリツヒ
ペーター・ボデイチユ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bayer AG
Original Assignee
Bayer AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6236602&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS60261130(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Bayer AG filed Critical Bayer AG
Publication of JPS60261130A publication Critical patent/JPS60261130A/ja
Publication of JPH0347572B2 publication Critical patent/JPH0347572B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
JP60106217A 1984-05-23 1985-05-20 半導体の箔を製造する方法及びその装置 Granted JPS60261130A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3419137.2 1984-05-23
DE19843419137 DE3419137A1 (de) 1984-05-23 1984-05-23 Verfahren und vorrichtung zur herstellung von halbleiterfolien

Publications (2)

Publication Number Publication Date
JPS60261130A true JPS60261130A (ja) 1985-12-24
JPH0347572B2 JPH0347572B2 (US06373033-20020416-M00035.png) 1991-07-19

Family

ID=6236602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60106217A Granted JPS60261130A (ja) 1984-05-23 1985-05-20 半導体の箔を製造する方法及びその装置

Country Status (9)

Country Link
US (1) US4670096A (US06373033-20020416-M00035.png)
EP (1) EP0165449B2 (US06373033-20020416-M00035.png)
JP (1) JPS60261130A (US06373033-20020416-M00035.png)
AU (1) AU577499B2 (US06373033-20020416-M00035.png)
CA (1) CA1255191A (US06373033-20020416-M00035.png)
DE (2) DE3419137A1 (US06373033-20020416-M00035.png)
ES (1) ES8604323A1 (US06373033-20020416-M00035.png)
GR (1) GR851250B (US06373033-20020416-M00035.png)
ZA (1) ZA853873B (US06373033-20020416-M00035.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007534600A (ja) * 2004-04-26 2007-11-29 アールジーエス・ディベロップメント・ビー．ブイ． 金属フォイルを製造するための方法と装置

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DE3902452A1 (de) * 1989-01-27 1990-08-02 Heliotronic Gmbh Mit einer strukturierten oberflaeche versehene substrate fuer das aufwachsen von erstarrenden schichten aus schmelzen, insbesondere von halbleitermaterial
DE4102484A1 (de) * 1991-01-29 1992-07-30 Bayer Ag Verfahren zur herstellung von metallscheiben sowie die verwendung von siliciumscheiben
DE19927604A1 (de) 1999-06-17 2000-12-21 Bayer Ag Silicium mit strukturierter Sauerstoffdotierung, dessen Herstellung und Verwendung
DE10047929B4 (de) * 2000-09-27 2013-04-11 Rgs Development B.V. Verfahren und Vorrichtung zur Herstellung von Halbleiter- und Metallscheiben oder -folien
US7465351B2 (en) * 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7691199B2 (en) * 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7344594B2 (en) * 2004-06-18 2008-03-18 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7569462B2 (en) * 2006-12-13 2009-08-04 Applied Materials, Inc. Directional crystallization of silicon sheets using rapid thermal processing
US20100314804A1 (en) * 2007-08-31 2010-12-16 Antonio Vallera Method for the production of semiconductor ribbons from a gaseous feedstock
FR2931297B1 (fr) * 2008-05-16 2010-08-27 Commissariat Energie Atomique Film autosupporte et plaquette en silicium obtenue par frittage
US20090289390A1 (en) * 2008-05-23 2009-11-26 Rec Silicon, Inc. Direct silicon or reactive metal casting
US20100047148A1 (en) * 2008-05-23 2010-02-25 Rec Silicon, Inc. Skull reactor
JP5715579B2 (ja) * 2009-03-09 2015-05-07 １３６６ テクノロジーズ インク． 薄い半導体本体を溶融物質から作成するための方法及び装置
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US20110303290A1 (en) * 2010-06-14 2011-12-15 Korea Institute Of Energy Research Method and apparatus for manufacturing silicon substrate with excellent surface quality using inert gas blowing
US20110305891A1 (en) * 2010-06-14 2011-12-15 Korea Institute Of Energy Research Method and apparatus for manufacturing silicon substrate with excellent productivity and surface quality using continuous casting
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9096946B2 (en) * 2011-05-12 2015-08-04 Korea Institute Of Energy Research Reusable dual crucible for silicon melting and manufacturing apparatus of silicon slim plate including the same
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
FR2985524B1 (fr) 2012-01-09 2014-03-07 Commissariat Energie Atomique Procede de preparation de silicium a l'etat solide
WO2014055781A1 (en) 2012-10-04 2014-04-10 Silevo, Inc. Photovoltaic devices with electroplated metal grids
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
FR3025222A1 (fr) 2014-09-01 2016-03-04 Guy Baret Procede de fabrication d'un subrat de silicium
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
JP6585799B1 (ja) * 2018-10-15 2019-10-02 昭和電工株式会社 ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法
NL2027980B1 (en) 2021-04-15 2022-10-25 E Magy B V Nano-structured carbon coated silicon material and manufacturing method for use in lithium ion based secondary batteries

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52106673A (en) * 1976-03-04 1977-09-07 Matsushita Electric Ind Co Ltd Crystal growing method and device thereof
JPS5384457A (en) * 1976-12-29 1978-07-25 Fujitsu Ltd Liquid-phase epitaxial growth method
JPS548181A (en) * 1977-06-22 1979-01-22 Fujitsu Ltd Liquid phase epitaxial growth method for drystal

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2401696A1 (fr) * 1977-08-31 1979-03-30 Ugine Kuhlmann Methode de depot de silicium cristallin en films minces sur substrats graphites
DE2817285A1 (de) * 1978-04-20 1979-10-31 Erwin Prof Dr Schopper Verfahren zur herstellung grossflaechiger, monokristalliner folien
DE2952620C2 (de) * 1979-01-02 1984-07-05 Allied Corp., Morris Township, N.J. Vorrichtung zum Stranggießen glasartiger Metallegierungs-Fäden
DE2927086A1 (de) * 1979-07-04 1981-01-22 Siemens Ag Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktur gleichwertigen saeulenstruktur fuer solarzellen
US4323419A (en) * 1980-05-08 1982-04-06 Atlantic Richfield Company Method for ribbon solar cell fabrication
US4484614A (en) * 1980-05-09 1984-11-27 Allegheny Ludlum Steel Corporation Method of and apparatus for strip casting
DE3231326A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
US4468281A (en) * 1982-12-27 1984-08-28 Atlantic Richfield Company Silicon ribbon growth wheel and method for heat flow control therein
US4468280A (en) * 1982-12-27 1984-08-28 Atlantic Richfield Company Silicon ribbon growth wheel and method for surface temperature profiling thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52106673A (en) * 1976-03-04 1977-09-07 Matsushita Electric Ind Co Ltd Crystal growing method and device thereof
JPS5384457A (en) * 1976-12-29 1978-07-25 Fujitsu Ltd Liquid-phase epitaxial growth method
JPS548181A (en) * 1977-06-22 1979-01-22 Fujitsu Ltd Liquid phase epitaxial growth method for drystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007534600A (ja) * 2004-04-26 2007-11-29 アールジーエス・ディベロップメント・ビー．ブイ． 金属フォイルを製造するための方法と装置
JP4885845B2 (ja) * 2004-04-26 2012-02-29 アールジーエス・ディベロップメント・ビー．ブイ． 金属フォイルを製造するための方法と装置

Also Published As

Publication number Publication date
ZA853873B (en) 1986-01-29
DE3564455D1 (en) 1988-09-22
GR851250B (US06373033-20020416-M00035.png) 1985-11-25
DE3419137A1 (de) 1985-11-28
JPH0347572B2 (US06373033-20020416-M00035.png) 1991-07-19
ES543388A0 (es) 1986-01-16
CA1255191A (en) 1989-06-06
AU4272385A (en) 1985-11-28
AU577499B2 (en) 1988-09-22
US4670096A (en) 1987-06-02
ES8604323A1 (es) 1986-01-16
EP0165449B2 (de) 1992-02-19
EP0165449B1 (de) 1988-08-17
EP0165449A1 (de) 1985-12-27

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