JPS60258979A - 半導体光検出装置 - Google Patents
半導体光検出装置Info
- Publication number
- JPS60258979A JPS60258979A JP60086358A JP8635885A JPS60258979A JP S60258979 A JPS60258979 A JP S60258979A JP 60086358 A JP60086358 A JP 60086358A JP 8635885 A JP8635885 A JP 8635885A JP S60258979 A JPS60258979 A JP S60258979A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor
- junction
- guard ring
- mol ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 239000012535 impurity Substances 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 21
- 239000010703 silicon Substances 0.000 abstract description 21
- 238000009792 diffusion process Methods 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 10
- 239000013078 crystal Substances 0.000 abstract description 9
- 229910052732 germanium Inorganic materials 0.000 abstract description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 5
- 230000010748 Photoabsorption Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 230000031700 light absorption Effects 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60086358A JPS60258979A (ja) | 1985-04-24 | 1985-04-24 | 半導体光検出装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60086358A JPS60258979A (ja) | 1985-04-24 | 1985-04-24 | 半導体光検出装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51090289A Division JPS5938748B2 (ja) | 1976-07-30 | 1976-07-30 | 半導体光検出装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60258979A true JPS60258979A (ja) | 1985-12-20 |
| JPS6229916B2 JPS6229916B2 (de) | 1987-06-29 |
Family
ID=13884666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60086358A Granted JPS60258979A (ja) | 1985-04-24 | 1985-04-24 | 半導体光検出装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60258979A (de) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4995867U (de) * | 1972-12-12 | 1974-08-19 | ||
| JPS5051285A (de) * | 1973-09-05 | 1975-05-08 | ||
| US3889284A (en) * | 1974-01-15 | 1975-06-10 | Us Army | Avalanche photodiode with varying bandgap |
| JPS53120289A (en) * | 1977-03-30 | 1978-10-20 | Toshiba Corp | Manufacture of semiconductor device |
-
1985
- 1985-04-24 JP JP60086358A patent/JPS60258979A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4995867U (de) * | 1972-12-12 | 1974-08-19 | ||
| JPS5051285A (de) * | 1973-09-05 | 1975-05-08 | ||
| US3889284A (en) * | 1974-01-15 | 1975-06-10 | Us Army | Avalanche photodiode with varying bandgap |
| JPS53120289A (en) * | 1977-03-30 | 1978-10-20 | Toshiba Corp | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6229916B2 (de) | 1987-06-29 |
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