JPS60251673A - 半導体圧力センサの製造方法 - Google Patents

半導体圧力センサの製造方法

Info

Publication number
JPS60251673A
JPS60251673A JP59108117A JP10811784A JPS60251673A JP S60251673 A JPS60251673 A JP S60251673A JP 59108117 A JP59108117 A JP 59108117A JP 10811784 A JP10811784 A JP 10811784A JP S60251673 A JPS60251673 A JP S60251673A
Authority
JP
Japan
Prior art keywords
layer
etching
diaphragm
forming
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59108117A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0369187B2 (cg-RX-API-DMAC7.html
Inventor
Shinji Tanikawara
谷川原　進二
Hajime Kishi
岸　元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Original Assignee
Fujikura Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd filed Critical Fujikura Ltd
Priority to JP59108117A priority Critical patent/JPS60251673A/ja
Publication of JPS60251673A publication Critical patent/JPS60251673A/ja
Publication of JPH0369187B2 publication Critical patent/JPH0369187B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP59108117A 1984-05-28 1984-05-28 半導体圧力センサの製造方法 Granted JPS60251673A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59108117A JPS60251673A (ja) 1984-05-28 1984-05-28 半導体圧力センサの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59108117A JPS60251673A (ja) 1984-05-28 1984-05-28 半導体圧力センサの製造方法

Publications (2)

Publication Number Publication Date
JPS60251673A true JPS60251673A (ja) 1985-12-12
JPH0369187B2 JPH0369187B2 (cg-RX-API-DMAC7.html) 1991-10-31

Family

ID=14476340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59108117A Granted JPS60251673A (ja) 1984-05-28 1984-05-28 半導体圧力センサの製造方法

Country Status (1)

Country Link
JP (1) JPS60251673A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH045573A (ja) * 1990-04-23 1992-01-09 Nec Corp 半導体素子およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688371A (en) * 1979-12-20 1981-07-17 Toshiba Corp Semiconductor pressure converter

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688371A (en) * 1979-12-20 1981-07-17 Toshiba Corp Semiconductor pressure converter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH045573A (ja) * 1990-04-23 1992-01-09 Nec Corp 半導体素子およびその製造方法

Also Published As

Publication number Publication date
JPH0369187B2 (cg-RX-API-DMAC7.html) 1991-10-31

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