JPS60251628A - 貫通孔の形成方法 - Google Patents

貫通孔の形成方法

Info

Publication number
JPS60251628A
JPS60251628A JP60006043A JP604385A JPS60251628A JP S60251628 A JPS60251628 A JP S60251628A JP 60006043 A JP60006043 A JP 60006043A JP 604385 A JP604385 A JP 604385A JP S60251628 A JPS60251628 A JP S60251628A
Authority
JP
Japan
Prior art keywords
mask
polymer layer
organic polymer
reactive ion
ion etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60006043A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0464457B2 (enExample
Inventor
ヒロユキ・ヒラオカ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS60251628A publication Critical patent/JPS60251628A/ja
Publication of JPH0464457B2 publication Critical patent/JPH0464457B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means

Landscapes

  • Drying Of Semiconductors (AREA)
JP60006043A 1984-05-21 1985-01-18 貫通孔の形成方法 Granted JPS60251628A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/612,189 US4482427A (en) 1984-05-21 1984-05-21 Process for forming via holes having sloped walls
US612189 2009-11-04

Publications (2)

Publication Number Publication Date
JPS60251628A true JPS60251628A (ja) 1985-12-12
JPH0464457B2 JPH0464457B2 (enExample) 1992-10-15

Family

ID=24452120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60006043A Granted JPS60251628A (ja) 1984-05-21 1985-01-18 貫通孔の形成方法

Country Status (4)

Country Link
US (1) US4482427A (enExample)
EP (1) EP0163074B1 (enExample)
JP (1) JPS60251628A (enExample)
DE (1) DE3583308D1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014041904A (ja) * 2012-08-22 2014-03-06 Denso Corp 樹脂膜のパターニング方法およびそれを用いたセンサの製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111102A (ja) * 1982-12-16 1984-06-27 Nippon Denso Co Ltd 防眩型反射鏡
US4830706A (en) * 1986-10-06 1989-05-16 International Business Machines Corporation Method of making sloped vias
EP0327336B1 (en) * 1988-02-01 1997-12-10 Semiconductor Energy Laboratory Co., Ltd. Electronic devices incorporating carbon films
US5840402A (en) * 1994-06-24 1998-11-24 Sheldahl, Inc. Metallized laminate material having ordered distribution of conductive through holes
EP0862789A4 (en) * 1995-11-22 1999-07-07 Olin Corp SEMICONDUCTOR HOUSING WITH A GROUNDING OR POWER SUPPLY RING
AUPO281896A0 (en) * 1996-10-04 1996-10-31 Unisearch Limited Reactive ion etching of silica structures for integrated optics applications

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1109829B (it) * 1977-07-05 1985-12-23 Ibm Processo di fabbricazione di cercuiti integrati
US4209356A (en) * 1978-10-18 1980-06-24 General Electric Company Selective etching of polymeric materials embodying silicones via reactor plasmas
US4357203A (en) * 1981-12-30 1982-11-02 Rca Corporation Plasma etching of polyimide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014041904A (ja) * 2012-08-22 2014-03-06 Denso Corp 樹脂膜のパターニング方法およびそれを用いたセンサの製造方法

Also Published As

Publication number Publication date
JPH0464457B2 (enExample) 1992-10-15
EP0163074A2 (en) 1985-12-04
US4482427A (en) 1984-11-13
EP0163074B1 (en) 1991-06-26
DE3583308D1 (de) 1991-08-01
EP0163074A3 (en) 1988-11-02

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