JPS60242638A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS60242638A
JPS60242638A JP60060307A JP6030785A JPS60242638A JP S60242638 A JPS60242638 A JP S60242638A JP 60060307 A JP60060307 A JP 60060307A JP 6030785 A JP6030785 A JP 6030785A JP S60242638 A JPS60242638 A JP S60242638A
Authority
JP
Japan
Prior art keywords
transistors
wiring
region
basic
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60060307A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0317383B2 (enrdf_load_stackoverflow
Inventor
Nobutake Matsumura
松村　信威
Ryusuke Hoshikawa
星川　龍輔
Yoshihide Sugiura
義英 杉浦
Hiroaki Ichikawa
博昭 市川
Shoji Sato
昭二 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60060307A priority Critical patent/JPS60242638A/ja
Publication of JPS60242638A publication Critical patent/JPS60242638A/ja
Publication of JPH0317383B2 publication Critical patent/JPH0317383B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP60060307A 1985-03-25 1985-03-25 半導体集積回路装置 Granted JPS60242638A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60060307A JPS60242638A (ja) 1985-03-25 1985-03-25 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60060307A JPS60242638A (ja) 1985-03-25 1985-03-25 半導体集積回路装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP52158445A Division JPS5925381B2 (ja) 1977-12-30 1977-12-30 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS60242638A true JPS60242638A (ja) 1985-12-02
JPH0317383B2 JPH0317383B2 (enrdf_load_stackoverflow) 1991-03-07

Family

ID=13138369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60060307A Granted JPS60242638A (ja) 1985-03-25 1985-03-25 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS60242638A (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940076A (enrdf_load_stackoverflow) * 1972-08-17 1974-04-15
JPS6028796A (ja) * 1983-07-28 1985-02-13 Mitsubishi Electric Corp 誘導電動機の制御装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940076A (enrdf_load_stackoverflow) * 1972-08-17 1974-04-15
JPS6028796A (ja) * 1983-07-28 1985-02-13 Mitsubishi Electric Corp 誘導電動機の制御装置

Also Published As

Publication number Publication date
JPH0317383B2 (enrdf_load_stackoverflow) 1991-03-07

Similar Documents

Publication Publication Date Title
JPS5925381B2 (ja) 半導体集積回路装置
KR910000155B1 (ko) 반도체 집적회로장치 및 그 제조방법
KR100433025B1 (ko) 반도체장치,반도체집적회로장치,플립플롭회로,배타적논리합회로,멀티플렉서및가산기
US4602270A (en) Gate array with reduced isolation
JP7610127B2 (ja) 半導体集積回路装置
JPS6286763A (ja) 分布電界効果トランジスタ構成体
CA1102009A (en) Integrated circuit layout utilizing separated active circuit and wiring regions
JP3644138B2 (ja) 半導体集積回路及びその配置配線方法
JPS60242638A (ja) 半導体集積回路装置
JPS5844592Y2 (ja) 半導体集積回路装置
USH512H (en) Automated universal array
JPH0258871A (ja) ボーダーレスマスタスライス半導体装置
JPS6074647A (ja) 半導体集積回路装置
JPS5866342A (ja) 半導体集積回路装置
JPS6343890B2 (enrdf_load_stackoverflow)
JPH0317379B2 (enrdf_load_stackoverflow)
US20030049891A1 (en) Utilization of MACRO power routing area for buffer insertion
JPH0317380B2 (enrdf_load_stackoverflow)
JP2679034B2 (ja) 半導体集積装置
JPH0613589A (ja) マスタースライス半導体装置
JP3636523B2 (ja) 半導体集積回路装置およびその製造方法
JPS62183140A (ja) 半導体集積回路装置
JPS59132144A (ja) 半導体集積回路装置の製造方法
JPH0410468A (ja) 半導体集積回路
JPS62249450A (ja) 半導体集積回路装置