JPS60242597A - 半導体記憶装置 - Google Patents
半導体記憶装置Info
- Publication number
- JPS60242597A JPS60242597A JP60075555A JP7555585A JPS60242597A JP S60242597 A JPS60242597 A JP S60242597A JP 60075555 A JP60075555 A JP 60075555A JP 7555585 A JP7555585 A JP 7555585A JP S60242597 A JPS60242597 A JP S60242597A
- Authority
- JP
- Japan
- Prior art keywords
- control
- gate
- memory cell
- floating
- dart
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 230000015654 memory Effects 0.000 claims description 55
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 239000003990 capacitor Substances 0.000 abstract description 18
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 16
- 230000005684 electric field Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 5
- 239000002784 hot electron Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 206010000060 Abdominal distension Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 208000024330 bloating Diseases 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Landscapes
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60075555A JPS60242597A (ja) | 1985-04-10 | 1985-04-10 | 半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60075555A JPS60242597A (ja) | 1985-04-10 | 1985-04-10 | 半導体記憶装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14519580A Division JPS5769592A (en) | 1980-10-17 | 1980-10-17 | Semiconductor storage device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60242597A true JPS60242597A (ja) | 1985-12-02 |
| JPS6130353B2 JPS6130353B2 (enrdf_load_stackoverflow) | 1986-07-12 |
Family
ID=13579541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60075555A Granted JPS60242597A (ja) | 1985-04-10 | 1985-04-10 | 半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60242597A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01125047U (enrdf_load_stackoverflow) * | 1988-02-16 | 1989-08-25 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513901A (en) * | 1978-07-17 | 1980-01-31 | Hitachi Ltd | Fixed memory of semiconductor |
-
1985
- 1985-04-10 JP JP60075555A patent/JPS60242597A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513901A (en) * | 1978-07-17 | 1980-01-31 | Hitachi Ltd | Fixed memory of semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6130353B2 (enrdf_load_stackoverflow) | 1986-07-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR920009054B1 (ko) | 불휘발성 반도체메모리 | |
| JP2982670B2 (ja) | 不揮発性半導体記憶装置および記憶方法 | |
| JP3061924B2 (ja) | 不揮発性記憶装置の消去方法 | |
| EP0052566A2 (en) | Electrically erasable programmable read-only memory | |
| KR930022378A (ko) | 전기적으로 프로그램 및 소거 가능한 불휘발성 반도체기억장치와 그의 동작방법 | |
| JPS5829631B2 (ja) | 半導体メモリ | |
| JPH0732241B2 (ja) | 不揮発性半導体メモリ・ユニット | |
| JPS58143494A (ja) | メモリ・アレイ | |
| KR950006211B1 (ko) | 바꿔쓰기 및 일괄소거 가능한 불휘발성 반도체기억장치(Flash EEPROM) | |
| JPH0855487A (ja) | メモリセルが消去された後にフラッシュメモリアレイにおけるメモリセルのしきい値電圧を収束する方法、およびその方法に従ってメモリセルのしきい値電圧を収束するためのゲート電圧およびドレイン電圧を印加するよう電力源が制御されるフラッシュメモリアレイ | |
| JP3105109B2 (ja) | 不揮発性半導体記憶装置 | |
| US6049484A (en) | Erase method to improve flash EEPROM endurance by combining high voltage source erase and negative gate erase | |
| JPH0436467B2 (enrdf_load_stackoverflow) | ||
| JP2953196B2 (ja) | 不揮発性半導体記憶装置 | |
| JPS60242597A (ja) | 半導体記憶装置 | |
| JP2601971B2 (ja) | 不揮発性半導体記憶装置 | |
| SU1596392A1 (ru) | Матричный накопитель и способ управлени записью, считыванием и стиранием информации в накопителе | |
| JPH0149024B2 (enrdf_load_stackoverflow) | ||
| KR102282581B1 (ko) | 플래시 메모리 시스템에서 워드 라인들과 제어 게이트 라인들 사이의 커플링을 감소시키기 위한 방법 및 장치 | |
| JPS6143797B2 (enrdf_load_stackoverflow) | ||
| JPS6130354B2 (enrdf_load_stackoverflow) | ||
| JPS60169172A (ja) | 絶縁ゲ−ト型電界効果トランジスタ | |
| US4423491A (en) | Self-refreshing memory cell | |
| JPS5929448A (ja) | プログラマブル・リ−ド・オンリ−・メモリ− | |
| JPS58203697A (ja) | 半導体記憶装置 |