JPS60240174A - 光結合半導体装置 - Google Patents

光結合半導体装置

Info

Publication number
JPS60240174A
JPS60240174A JP59098028A JP9802884A JPS60240174A JP S60240174 A JPS60240174 A JP S60240174A JP 59098028 A JP59098028 A JP 59098028A JP 9802884 A JP9802884 A JP 9802884A JP S60240174 A JPS60240174 A JP S60240174A
Authority
JP
Japan
Prior art keywords
photodiode
type region
semiconductor device
type
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59098028A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0481872B2 (enrdf_load_stackoverflow
Inventor
Toshibumi Yoshikawa
俊文 吉川
Masaru Kubo
勝 久保
Atsushi Kagisawa
篤 鍵沢
Nobuhiro Nishimoto
宜弘 西本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59098028A priority Critical patent/JPS60240174A/ja
Publication of JPS60240174A publication Critical patent/JPS60240174A/ja
Publication of JPH0481872B2 publication Critical patent/JPH0481872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Light Receiving Elements (AREA)
JP59098028A 1984-05-15 1984-05-15 光結合半導体装置 Granted JPS60240174A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59098028A JPS60240174A (ja) 1984-05-15 1984-05-15 光結合半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59098028A JPS60240174A (ja) 1984-05-15 1984-05-15 光結合半導体装置

Publications (2)

Publication Number Publication Date
JPS60240174A true JPS60240174A (ja) 1985-11-29
JPH0481872B2 JPH0481872B2 (enrdf_load_stackoverflow) 1992-12-25

Family

ID=14208510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59098028A Granted JPS60240174A (ja) 1984-05-15 1984-05-15 光結合半導体装置

Country Status (1)

Country Link
JP (1) JPS60240174A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04303973A (ja) * 1991-04-01 1992-10-27 Nec Corp ソリッドステートリレー用受光素子
US5382824A (en) * 1992-07-16 1995-01-17 Landis & Gyr Business Support Ag Integrated circuit with an integrated color-selective photo diode and an amplifier following the photo-diode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50125692A (enrdf_load_stackoverflow) * 1974-03-20 1975-10-02
JPS519590A (enrdf_load_stackoverflow) * 1974-07-12 1976-01-26 Mitsubishi Electric Corp
JPS5819030A (ja) * 1981-07-27 1983-02-03 Toshiba Corp 光結合半導体装置
JPS6329427A (ja) * 1986-07-22 1988-02-08 松下電工株式会社 タイムスイツチ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50125692A (enrdf_load_stackoverflow) * 1974-03-20 1975-10-02
JPS519590A (enrdf_load_stackoverflow) * 1974-07-12 1976-01-26 Mitsubishi Electric Corp
JPS5819030A (ja) * 1981-07-27 1983-02-03 Toshiba Corp 光結合半導体装置
JPS6329427A (ja) * 1986-07-22 1988-02-08 松下電工株式会社 タイムスイツチ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04303973A (ja) * 1991-04-01 1992-10-27 Nec Corp ソリッドステートリレー用受光素子
US5382824A (en) * 1992-07-16 1995-01-17 Landis & Gyr Business Support Ag Integrated circuit with an integrated color-selective photo diode and an amplifier following the photo-diode

Also Published As

Publication number Publication date
JPH0481872B2 (enrdf_load_stackoverflow) 1992-12-25

Similar Documents

Publication Publication Date Title
JP3313431B2 (ja) モノリシック単方向保護ダイオード
US3925801A (en) Photon isolator with improved photodetector transistor stage
US4647956A (en) Back biased CMOS device with means for eliminating latchup
JPS61154063A (ja) 光半導体装置およびその製造方法
US4318115A (en) Dual junction photoelectric semiconductor device
US4651180A (en) Semiconductor photoelectric transducer
US6864555B2 (en) Photo detector methods to reduce the disabling effects of displacement current in opto-couplers
KR102587737B1 (ko) Esd 보호 반도체 광전자 증배관
JPS60240174A (ja) 光結合半導体装置
JPH061833B2 (ja) Ｍｏｓ形半導体装置
JPH0471341B2 (enrdf_load_stackoverflow)
Baturitsky et al. Multichannel monolithic front-end system design—4. Front-end system stability and channel-to-channel coupling
JP2670634B2 (ja) 回路内蔵受光素子
JP2916042B2 (ja) 回路内蔵受光素子
JPH02142181A (ja) 回路内蔵受光素子
JPH04242980A (ja) 受光素子
JPS6329427B2 (enrdf_load_stackoverflow)
JPH0730143A (ja) 光結合半導体装置
JP2649862B2 (ja) 回路内蔵受光素子の製造方法
JPS58141561A (ja) 半導体装置
JP3086514B2 (ja) 光半導体装置
JP2830092B2 (ja) 半導体装置の静電保護素子
JPH0740590B2 (ja) 半導体装置
JPS6050101B2 (ja) 固体撮像装置
JPH02260657A (ja) 回路内蔵受光素子の製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees