JPS60229370A - 自己整合型半導体装置の製造方法 - Google Patents

自己整合型半導体装置の製造方法

Info

Publication number
JPS60229370A
JPS60229370A JP59084028A JP8402884A JPS60229370A JP S60229370 A JPS60229370 A JP S60229370A JP 59084028 A JP59084028 A JP 59084028A JP 8402884 A JP8402884 A JP 8402884A JP S60229370 A JPS60229370 A JP S60229370A
Authority
JP
Japan
Prior art keywords
region
polycrystalline silicon
semiconductor
mask
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59084028A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0564457B2 (enrdf_load_stackoverflow
Inventor
Motonori Kawaji
河路　幹規
Akio Anzai
安斎　昭夫
Shigeo Kuroda
黒田　重雄
Tetsushi Sakai
徹志 酒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP59084028A priority Critical patent/JPS60229370A/ja
Publication of JPS60229370A publication Critical patent/JPS60229370A/ja
Publication of JPH0564457B2 publication Critical patent/JPH0564457B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59084028A 1984-04-27 1984-04-27 自己整合型半導体装置の製造方法 Granted JPS60229370A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59084028A JPS60229370A (ja) 1984-04-27 1984-04-27 自己整合型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59084028A JPS60229370A (ja) 1984-04-27 1984-04-27 自己整合型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60229370A true JPS60229370A (ja) 1985-11-14
JPH0564457B2 JPH0564457B2 (enrdf_load_stackoverflow) 1993-09-14

Family

ID=13819087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59084028A Granted JPS60229370A (ja) 1984-04-27 1984-04-27 自己整合型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60229370A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0199257A (ja) * 1987-09-14 1989-04-18 Motorola Inc シリサイド接触を有するバイポーラ半導体デバイスの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0199257A (ja) * 1987-09-14 1989-04-18 Motorola Inc シリサイド接触を有するバイポーラ半導体デバイスの製造方法

Also Published As

Publication number Publication date
JPH0564457B2 (enrdf_load_stackoverflow) 1993-09-14

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