JPS60221566A - 薄膜形成装置 - Google Patents

薄膜形成装置

Info

Publication number
JPS60221566A
JPS60221566A JP59079231A JP7923184A JPS60221566A JP S60221566 A JPS60221566 A JP S60221566A JP 59079231 A JP59079231 A JP 59079231A JP 7923184 A JP7923184 A JP 7923184A JP S60221566 A JPS60221566 A JP S60221566A
Authority
JP
Japan
Prior art keywords
thin film
film forming
plasma generation
ions
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59079231A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0568545B2 (en, 2012
Inventor
Mamoru Sato
守 佐藤
Koichi Yamaguchi
浩一 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Kyocera Corp filed Critical Agency of Industrial Science and Technology
Priority to JP59079231A priority Critical patent/JPS60221566A/ja
Priority to US06/724,188 priority patent/US4657774A/en
Publication of JPS60221566A publication Critical patent/JPS60221566A/ja
Priority to US06/822,814 priority patent/US4676194A/en
Publication of JPH0568545B2 publication Critical patent/JPH0568545B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP59079231A 1984-04-18 1984-04-18 薄膜形成装置 Granted JPS60221566A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP59079231A JPS60221566A (ja) 1984-04-18 1984-04-18 薄膜形成装置
US06/724,188 US4657774A (en) 1984-04-18 1985-04-17 Method for thin film formation
US06/822,814 US4676194A (en) 1984-04-18 1986-01-27 Apparatus for thin film formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59079231A JPS60221566A (ja) 1984-04-18 1984-04-18 薄膜形成装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6780485A Division JPS60223113A (ja) 1985-03-30 1985-03-30 薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS60221566A true JPS60221566A (ja) 1985-11-06
JPH0568545B2 JPH0568545B2 (en, 2012) 1993-09-29

Family

ID=13684105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59079231A Granted JPS60221566A (ja) 1984-04-18 1984-04-18 薄膜形成装置

Country Status (2)

Country Link
US (2) US4657774A (en, 2012)
JP (1) JPS60221566A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103122449A (zh) * 2011-11-21 2013-05-29 鸿富锦精密工业（深圳）有限公司 离化装置及应用离化装置的镀膜装置

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DE3931565C1 (en, 2012) * 1989-09-22 1991-01-24 Dornier Luftfahrt Gmbh, 8000 Muenchen, De
US5114559A (en) * 1989-09-26 1992-05-19 Ricoh Company, Ltd. Thin film deposition system
JP2786283B2 (ja) * 1989-12-22 1998-08-13 株式会社日立製作所 表面改質方法およびその装置並びに表面改質基材
DE4126851A1 (de) * 1991-08-14 1993-02-18 Krupp Widia Gmbh Werkzeug mit verschleissfester schneide aus kubischem bornitrid oder polykristallinem kubischem bornitrid, verfahren zu dessen herstellung sowie dessen verwendung
DE4128547A1 (de) * 1991-08-28 1993-03-04 Leybold Ag Verfahren und vorrichtung fuer die herstellung einer entspiegelungsschicht auf linsen
DE4204650C1 (en, 2012) * 1992-02-15 1993-07-08 Hoffmeister, Helmut, Dr., 4400 Muenster, De
US6475333B1 (en) * 1993-07-26 2002-11-05 Nihon Shinku Gijutsu Kabushiki Kaisha Discharge plasma processing device
US5975912A (en) * 1994-06-03 1999-11-02 Materials Research Corporation Low temperature plasma-enhanced formation of integrated circuits
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US5628829A (en) * 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
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US5518780A (en) * 1994-06-16 1996-05-21 Ford Motor Company Method of making hard, transparent amorphous hydrogenated boron nitride films
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US6827824B1 (en) 1996-04-12 2004-12-07 Micron Technology, Inc. Enhanced collimated deposition
US5885666A (en) * 1997-05-06 1999-03-23 General Motors Corporation Conversion of hexagonal-like BN to cubic-like BN by ion implantation
JP3599564B2 (ja) * 1998-06-25 2004-12-08 東京エレクトロン株式会社 イオン流形成方法及び装置
US6200649B1 (en) * 1999-07-21 2001-03-13 Southwest Research Institute Method of making titanium boronitride coatings using ion beam assisted deposition
US20050208218A1 (en) * 1999-08-21 2005-09-22 Ibadex Llc. Method for depositing boron-rich coatings
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
JP4504511B2 (ja) 2000-05-26 2010-07-14 忠弘 大見 プラズマ処理装置
JP4621333B2 (ja) * 2000-06-01 2011-01-26 ホーチキ株式会社 薄膜形成方法
TW521386B (en) * 2000-06-28 2003-02-21 Mitsubishi Heavy Ind Ltd Hexagonal boron nitride film with low dielectric constant, layer dielectric film and method of production thereof, and plasma CVD apparatus
US6596399B2 (en) 2000-12-04 2003-07-22 Guardian Industries Corp. UV absorbing/reflecting silver oxide layer, and method of making same
JP4078084B2 (ja) * 2002-01-28 2008-04-23 キヤノン株式会社 イオン化成膜方法及び装置
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US7421973B2 (en) * 2003-11-06 2008-09-09 Axcelis Technologies, Inc. System and method for performing SIMOX implants using an ion shower
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US20100112795A1 (en) * 2005-08-30 2010-05-06 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices
EP1947210A1 (fr) * 2007-01-16 2008-07-23 ARCELOR France Procede de revetement d'un substrat, installation de mise en oeuvre du procede et dispositif d'alimentation en metal d'une telle installation
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
TW201110831A (en) * 2009-09-03 2011-03-16 Chunghwa Picture Tubes Ltd Plasma apparatus and method of fabricating nano-crystalline silicon thin film
US8138071B2 (en) * 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8062965B2 (en) * 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
TWI585042B (zh) 2010-02-26 2017-06-01 恩特葛瑞斯股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
US9205392B2 (en) 2010-08-30 2015-12-08 Entegris, Inc. Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates
US8828504B2 (en) * 2010-12-17 2014-09-09 International Business Machines Corporation Deposition of hydrogenated thin film
TWI583442B (zh) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 Ｂ２ｆ４之製造程序
US20130098871A1 (en) 2011-10-19 2013-04-25 Fei Company Internal Split Faraday Shield for an Inductively Coupled Plasma Source
KR20220025123A (ko) 2012-02-14 2022-03-03 엔테그리스, 아이엔씨. 주입 빔 및 소스 수명 성능 개선을 위한 탄소 도판트 기체 및 동축류
WO2015023903A1 (en) 2013-08-16 2015-02-19 Entegris, Inc. Silicon implantation in substrates and provision of silicon precursor compositions therefor
US9287085B2 (en) * 2014-05-12 2016-03-15 Varian Semiconductor Equipment Associates, Inc. Processing apparatus and method of treating a substrate

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JPS5435920B2 (en, 2012) * 1974-06-10 1979-11-06
GB1483966A (en) * 1974-10-23 1977-08-24 Sharp Kk Vapourized-metal cluster ion source and ionized-cluster beam deposition
US4161418A (en) * 1975-06-27 1979-07-17 Futaba Denshi Kogyo K. K. Ionized-cluster-beam deposition process for fabricating p-n junction semiconductor layers
US4218495A (en) * 1975-07-18 1980-08-19 Futaba Denshi Kogyo K.K. Schottky barrier type solid-state element
AU531847B2 (en) * 1979-02-23 1983-09-08 Sekisui Kagaku Kogyo Kabushiki Kaisha Magnetic recording medium + process for production thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103122449A (zh) * 2011-11-21 2013-05-29 鸿富锦精密工业（深圳）有限公司 离化装置及应用离化装置的镀膜装置
CN103122449B (zh) * 2011-11-21 2017-02-15 管炜 离化装置及应用离化装置的镀膜装置

Also Published As

Publication number Publication date
JPH0568545B2 (en, 2012) 1993-09-29
US4657774A (en) 1987-04-14
US4676194A (en) 1987-06-30

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Legal Events

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