JPS60219748A - ドライエツチングによるパタ−ンの形成方法 - Google Patents
ドライエツチングによるパタ−ンの形成方法Info
- Publication number
- JPS60219748A JPS60219748A JP7702384A JP7702384A JPS60219748A JP S60219748 A JPS60219748 A JP S60219748A JP 7702384 A JP7702384 A JP 7702384A JP 7702384 A JP7702384 A JP 7702384A JP S60219748 A JPS60219748 A JP S60219748A
- Authority
- JP
- Japan
- Prior art keywords
- film
- halocarbon
- etched
- mixed gas
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001312 dry etching Methods 0.000 title claims description 10
- 230000007261 regionalization Effects 0.000 title 1
- 239000007789 gas Substances 0.000 claims abstract description 33
- 238000005530 etching Methods 0.000 claims abstract description 29
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- -1 fluorine series halocarbon Chemical class 0.000 claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 11
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 19
- 229910052801 chlorine Inorganic materials 0.000 claims description 14
- 239000000460 chlorine Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 150000008282 halocarbons Chemical class 0.000 claims description 13
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 235000011389 fruit/vegetable juice Nutrition 0.000 claims 1
- 239000011521 glass Substances 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 206010011732 Cyst Diseases 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 208000031513 cyst Diseases 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229930194542 Keto Natural products 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 235000014121 butter Nutrition 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7702384A JPS60219748A (ja) | 1984-04-16 | 1984-04-16 | ドライエツチングによるパタ−ンの形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7702384A JPS60219748A (ja) | 1984-04-16 | 1984-04-16 | ドライエツチングによるパタ−ンの形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60219748A true JPS60219748A (ja) | 1985-11-02 |
| JPH0343777B2 JPH0343777B2 (enrdf_load_html_response) | 1991-07-03 |
Family
ID=13622153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7702384A Granted JPS60219748A (ja) | 1984-04-16 | 1984-04-16 | ドライエツチングによるパタ−ンの形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60219748A (enrdf_load_html_response) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001096955A3 (en) * | 2000-06-15 | 2002-11-28 | Applied Materials Inc | A method and apparatus for etching metal layers on substrates |
| US6534417B2 (en) | 2000-05-22 | 2003-03-18 | Applied Materials, Inc. | Method and apparatus for etching photomasks |
| US6544894B1 (en) * | 1999-01-26 | 2003-04-08 | Sharp Kabushiki Kaisha | Method of producing chromium mask |
| US6960413B2 (en) | 2003-03-21 | 2005-11-01 | Applied Materials, Inc. | Multi-step process for etching photomasks |
| US7018934B2 (en) | 2001-09-04 | 2006-03-28 | Applied Materials, Inc. | Methods and apparatus for etching metal layers on substrates |
| US7077973B2 (en) | 2003-04-18 | 2006-07-18 | Applied Materials, Inc. | Methods for substrate orientation |
| US7115523B2 (en) | 2000-05-22 | 2006-10-03 | Applied Materials, Inc. | Method and apparatus for etching photomasks |
| US7183201B2 (en) | 2001-07-23 | 2007-02-27 | Applied Materials, Inc. | Selective etching of organosilicate films over silicon oxide stop etch layers |
| US7521000B2 (en) | 2003-08-28 | 2009-04-21 | Applied Materials, Inc. | Process for etching photomasks |
| US7829243B2 (en) | 2005-01-27 | 2010-11-09 | Applied Materials, Inc. | Method for plasma etching a chromium layer suitable for photomask fabrication |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56144541A (en) * | 1980-04-11 | 1981-11-10 | Fujitsu Ltd | Etching method |
| JPS60148123A (ja) * | 1983-12-30 | 1985-08-05 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 乾式エツチング方法 |
-
1984
- 1984-04-16 JP JP7702384A patent/JPS60219748A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56144541A (en) * | 1980-04-11 | 1981-11-10 | Fujitsu Ltd | Etching method |
| JPS60148123A (ja) * | 1983-12-30 | 1985-08-05 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 乾式エツチング方法 |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6544894B1 (en) * | 1999-01-26 | 2003-04-08 | Sharp Kabushiki Kaisha | Method of producing chromium mask |
| US6534417B2 (en) | 2000-05-22 | 2003-03-18 | Applied Materials, Inc. | Method and apparatus for etching photomasks |
| US7115523B2 (en) | 2000-05-22 | 2006-10-03 | Applied Materials, Inc. | Method and apparatus for etching photomasks |
| WO2001096955A3 (en) * | 2000-06-15 | 2002-11-28 | Applied Materials Inc | A method and apparatus for etching metal layers on substrates |
| US7183201B2 (en) | 2001-07-23 | 2007-02-27 | Applied Materials, Inc. | Selective etching of organosilicate films over silicon oxide stop etch layers |
| US7244672B2 (en) | 2001-07-23 | 2007-07-17 | Applied Materials, Inc. | Selective etching of organosilicate films over silicon oxide stop etch layers |
| US7018934B2 (en) | 2001-09-04 | 2006-03-28 | Applied Materials, Inc. | Methods and apparatus for etching metal layers on substrates |
| US6960413B2 (en) | 2003-03-21 | 2005-11-01 | Applied Materials, Inc. | Multi-step process for etching photomasks |
| US7371485B2 (en) | 2003-03-21 | 2008-05-13 | Applied Materials, Inc. | Multi-step process for etching photomasks |
| US7077973B2 (en) | 2003-04-18 | 2006-07-18 | Applied Materials, Inc. | Methods for substrate orientation |
| US7521000B2 (en) | 2003-08-28 | 2009-04-21 | Applied Materials, Inc. | Process for etching photomasks |
| US7829243B2 (en) | 2005-01-27 | 2010-11-09 | Applied Materials, Inc. | Method for plasma etching a chromium layer suitable for photomask fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0343777B2 (enrdf_load_html_response) | 1991-07-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |