JPS60211975A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60211975A
JPS60211975A JP59067636A JP6763684A JPS60211975A JP S60211975 A JPS60211975 A JP S60211975A JP 59067636 A JP59067636 A JP 59067636A JP 6763684 A JP6763684 A JP 6763684A JP S60211975 A JPS60211975 A JP S60211975A
Authority
JP
Japan
Prior art keywords
emitter
pattern
polycrystalline silicon
silicon
fine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59067636A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0576767B2 (enrdf_load_stackoverflow
Inventor
Keijiro Uehara
敬二郎 上原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59067636A priority Critical patent/JPS60211975A/ja
Publication of JPS60211975A publication Critical patent/JPS60211975A/ja
Publication of JPH0576767B2 publication Critical patent/JPH0576767B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP59067636A 1984-04-06 1984-04-06 半導体装置の製造方法 Granted JPS60211975A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59067636A JPS60211975A (ja) 1984-04-06 1984-04-06 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59067636A JPS60211975A (ja) 1984-04-06 1984-04-06 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60211975A true JPS60211975A (ja) 1985-10-24
JPH0576767B2 JPH0576767B2 (enrdf_load_stackoverflow) 1993-10-25

Family

ID=13350675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59067636A Granted JPS60211975A (ja) 1984-04-06 1984-04-06 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60211975A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0576767B2 (enrdf_load_stackoverflow) 1993-10-25

Similar Documents

Publication Publication Date Title
JPS62179764A (ja) 壁スペ−サを有するバイポ−ラ半導体装置の製造方法
US4216491A (en) Semiconductor integrated circuit isolated through dielectric material
US4579625A (en) Method of producing a complementary semiconductor device with a dielectric isolation structure
JPS60211975A (ja) 半導体装置の製造方法
JPH0511668B2 (enrdf_load_stackoverflow)
JPS61172346A (ja) 半導体集積回路装置
JPH079930B2 (ja) 半導体装置の製造方法
JPS61112375A (ja) 半導体装置の製造方法
JPH0314238A (ja) バイポーラ型半導体集積回路装置の製造方法
JPS6083347A (ja) 半導体装置の製造方法
JPS59232458A (ja) 半導体装置の製造法
JPH04241422A (ja) 半導体集積回路装置
JPS61112377A (ja) 半導体装置の製造方法
JPS62189753A (ja) 半導体装置
JPH1032264A (ja) 半導体装置及び半導体装置の製造方法
JPS59198758A (ja) 半導体装置の製法
JPS59220929A (ja) 高耐圧トランジスタの製法
JPH0278227A (ja) コレクタ分離拡散トランジスタとその製造方法
JPS60126865A (ja) バイポ−ラトランジスタ及びその製造方法
JPS61172369A (ja) 半導体装置の製造方法
JPS6212165A (ja) 半導体装置の製造方法
JPS61147533A (ja) 半導体装置の製造方法
JPS6281760A (ja) 半導体装置の製造方法
JPS6184049A (ja) 半導体装置の製造方法
JPH02254727A (ja) 半導体装置の製造方法