JPS60208863A - Ｍｏｓトランジスタ及びその製造方法 - Google Patents

Ｍｏｓトランジスタ及びその製造方法

Info

Publication number
JPS60208863A
JPS60208863A JP59066296A JP6629684A JPS60208863A JP S60208863 A JPS60208863 A JP S60208863A JP 59066296 A JP59066296 A JP 59066296A JP 6629684 A JP6629684 A JP 6629684A JP S60208863 A JPS60208863 A JP S60208863A
Authority
JP
Japan
Prior art keywords
oxide film
drain
gate
gate oxide
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59066296A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0527273B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Matsumoto
比呂志 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59066296A priority Critical patent/JPS60208863A/ja
Publication of JPS60208863A publication Critical patent/JPS60208863A/ja
Publication of JPH0527273B2 publication Critical patent/JPH0527273B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP59066296A 1984-04-03 1984-04-03 Ｍｏｓトランジスタ及びその製造方法 Granted JPS60208863A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59066296A JPS60208863A (ja) 1984-04-03 1984-04-03 Ｍｏｓトランジスタ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59066296A JPS60208863A (ja) 1984-04-03 1984-04-03 Ｍｏｓトランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
JPS60208863A true JPS60208863A (ja) 1985-10-21
JPH0527273B2 JPH0527273B2 (enrdf_load_stackoverflow) 1993-04-20

Family

ID=13311709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59066296A Granted JPS60208863A (ja) 1984-04-03 1984-04-03 Ｍｏｓトランジスタ及びその製造方法

Country Status (1)

Country Link
JP (1) JPS60208863A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648671A (en) * 1995-12-13 1997-07-15 U S Philips Corporation Lateral thin-film SOI devices with linearly-graded field oxide and linear doping profile
WO1997035346A1 (de) * 1996-03-20 1997-09-25 Siemens Aktiengesellschaft Durch feldeffekt steuerbares halbleiterbauelement
CN106783975A (zh) * 2016-11-23 2017-05-31 南通沃特光电科技有限公司 一种n沟道增强型mos晶体管器件

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648671A (en) * 1995-12-13 1997-07-15 U S Philips Corporation Lateral thin-film SOI devices with linearly-graded field oxide and linear doping profile
WO1997035346A1 (de) * 1996-03-20 1997-09-25 Siemens Aktiengesellschaft Durch feldeffekt steuerbares halbleiterbauelement
CN106783975A (zh) * 2016-11-23 2017-05-31 南通沃特光电科技有限公司 一种n沟道增强型mos晶体管器件

Also Published As

Publication number Publication date
JPH0527273B2 (enrdf_load_stackoverflow) 1993-04-20

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