JPS60204698A - 半導体結晶成長方法 - Google Patents

半導体結晶成長方法

Info

Publication number
JPS60204698A
JPS60204698A JP59060202A JP6020284A JPS60204698A JP S60204698 A JPS60204698 A JP S60204698A JP 59060202 A JP59060202 A JP 59060202A JP 6020284 A JP6020284 A JP 6020284A JP S60204698 A JPS60204698 A JP S60204698A
Authority
JP
Japan
Prior art keywords
zns
substrate
crystal
raw material
semiconductor crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59060202A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0211560B2 (enrdf_load_stackoverflow
Inventor
Atsushi Kamata
鎌田　敦之
Masaru Kawachi
河内　勝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59060202A priority Critical patent/JPS60204698A/ja
Publication of JPS60204698A publication Critical patent/JPS60204698A/ja
Publication of JPH0211560B2 publication Critical patent/JPH0211560B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59060202A 1984-03-28 1984-03-28 半導体結晶成長方法 Granted JPS60204698A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59060202A JPS60204698A (ja) 1984-03-28 1984-03-28 半導体結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59060202A JPS60204698A (ja) 1984-03-28 1984-03-28 半導体結晶成長方法

Publications (2)

Publication Number Publication Date
JPS60204698A true JPS60204698A (ja) 1985-10-16
JPH0211560B2 JPH0211560B2 (enrdf_load_stackoverflow) 1990-03-14

Family

ID=13135326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59060202A Granted JPS60204698A (ja) 1984-03-28 1984-03-28 半導体結晶成長方法

Country Status (1)

Country Link
JP (1) JPS60204698A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62119193A (ja) * 1985-11-15 1987-05-30 Matsushita Electric Ind Co Ltd 半導体の製造方法
JPS62163310A (ja) * 1986-01-14 1987-07-20 Toshiba Corp 化合物半導体結晶の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62119193A (ja) * 1985-11-15 1987-05-30 Matsushita Electric Ind Co Ltd 半導体の製造方法
JPS62163310A (ja) * 1986-01-14 1987-07-20 Toshiba Corp 化合物半導体結晶の製造方法

Also Published As

Publication number Publication date
JPH0211560B2 (enrdf_load_stackoverflow) 1990-03-14

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