JPS60204692A - ＣｄＴｅ結晶の製造方法 - Google Patents

ＣｄＴｅ結晶の製造方法

Info

Publication number
JPS60204692A
JPS60204692A JP59060416A JP6041684A JPS60204692A JP S60204692 A JPS60204692 A JP S60204692A JP 59060416 A JP59060416 A JP 59060416A JP 6041684 A JP6041684 A JP 6041684A JP S60204692 A JPS60204692 A JP S60204692A
Authority
JP
Japan
Prior art keywords
cdte
quartz ampoule
crystal
ingot
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59060416A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0359039B2 (cs
Inventor
Yoji Takeuchi
洋二 竹内
Takashi Kitamoto
尚 北本
Junichi Suzuki
順一 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Yokogawa Electric Corp
Original Assignee
JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Yokogawa Hokushin Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>, Yokogawa Hokushin Electric Corp filed Critical JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Priority to JP59060416A priority Critical patent/JPS60204692A/ja
Publication of JPS60204692A publication Critical patent/JPS60204692A/ja
Publication of JPH0359039B2 publication Critical patent/JPH0359039B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59060416A 1984-03-28 1984-03-28 ＣｄＴｅ結晶の製造方法 Granted JPS60204692A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59060416A JPS60204692A (ja) 1984-03-28 1984-03-28 ＣｄＴｅ結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59060416A JPS60204692A (ja) 1984-03-28 1984-03-28 ＣｄＴｅ結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS60204692A true JPS60204692A (ja) 1985-10-16
JPH0359039B2 JPH0359039B2 (cs) 1991-09-09

Family

ID=13141564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59060416A Granted JPS60204692A (ja) 1984-03-28 1984-03-28 ＣｄＴｅ結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS60204692A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104152983A (zh) * 2014-08-01 2014-11-19 北京雷生强式科技有限责任公司 一种用于生长硒化镉晶体的坩埚及硒化镉晶体的生长方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104152983A (zh) * 2014-08-01 2014-11-19 北京雷生强式科技有限责任公司 一种用于生长硒化镉晶体的坩埚及硒化镉晶体的生长方法

Also Published As

Publication number Publication date
JPH0359039B2 (cs) 1991-09-09

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