JPS60202928A - 光励起反応装置 - Google Patents
光励起反応装置Info
- Publication number
- JPS60202928A JPS60202928A JP6021384A JP6021384A JPS60202928A JP S60202928 A JPS60202928 A JP S60202928A JP 6021384 A JP6021384 A JP 6021384A JP 6021384 A JP6021384 A JP 6021384A JP S60202928 A JPS60202928 A JP S60202928A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- light source
- discharge
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 29
- 230000003287 optical effect Effects 0.000 title claims abstract description 7
- 238000005086 pumping Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 15
- 230000005540 biological transmission Effects 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 230000001443 photoexcitation Effects 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000004381 surface treatment Methods 0.000 claims description 4
- 229910001515 alkali metal fluoride Inorganic materials 0.000 claims description 2
- 229910001618 alkaline earth metal fluoride Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 34
- 239000012495 reaction gas Substances 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 4
- 238000006552 photochemical reaction Methods 0.000 abstract description 2
- 230000005611 electricity Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 14
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 12
- 229910052753 mercury Inorganic materials 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 229910052724 xenon Inorganic materials 0.000 description 6
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 4
- 206010070834 Sensitisation Diseases 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000008313 sensitization Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- -1 krigton Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6021384A JPS60202928A (ja) | 1984-03-28 | 1984-03-28 | 光励起反応装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6021384A JPS60202928A (ja) | 1984-03-28 | 1984-03-28 | 光励起反応装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60202928A true JPS60202928A (ja) | 1985-10-14 |
| JPH0586648B2 JPH0586648B2 (enrdf_load_stackoverflow) | 1993-12-13 |
Family
ID=13135647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6021384A Granted JPS60202928A (ja) | 1984-03-28 | 1984-03-28 | 光励起反応装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60202928A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60218474A (ja) * | 1984-04-13 | 1985-11-01 | Ushio Inc | 成膜方法 |
| JPS6190421A (ja) * | 1984-10-11 | 1986-05-08 | Canon Inc | 堆積膜形成方法 |
| JPS62227089A (ja) * | 1986-03-27 | 1987-10-06 | Anelva Corp | 表面処理方法および装置 |
| JPS6380525A (ja) * | 1986-09-24 | 1988-04-11 | Semiconductor Energy Lab Co Ltd | 被膜形成方法 |
| JP2012149278A (ja) * | 2011-01-17 | 2012-08-09 | Mitsui Chemicals Inc | シリコン含有膜の製造方法 |
-
1984
- 1984-03-28 JP JP6021384A patent/JPS60202928A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60218474A (ja) * | 1984-04-13 | 1985-11-01 | Ushio Inc | 成膜方法 |
| JPS6190421A (ja) * | 1984-10-11 | 1986-05-08 | Canon Inc | 堆積膜形成方法 |
| JPS62227089A (ja) * | 1986-03-27 | 1987-10-06 | Anelva Corp | 表面処理方法および装置 |
| JPS6380525A (ja) * | 1986-09-24 | 1988-04-11 | Semiconductor Energy Lab Co Ltd | 被膜形成方法 |
| JP2012149278A (ja) * | 2011-01-17 | 2012-08-09 | Mitsui Chemicals Inc | シリコン含有膜の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0586648B2 (enrdf_load_stackoverflow) | 1993-12-13 |
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