JPS60202928A - 光励起反応装置 - Google Patents

光励起反応装置

Info

Publication number
JPS60202928A
JPS60202928A JP6021384A JP6021384A JPS60202928A JP S60202928 A JPS60202928 A JP S60202928A JP 6021384 A JP6021384 A JP 6021384A JP 6021384 A JP6021384 A JP 6021384A JP S60202928 A JPS60202928 A JP S60202928A
Authority
JP
Japan
Prior art keywords
substrate
gas
light
reaction device
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6021384A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0586648B2 (enrdf_load_stackoverflow
Inventor
Masahiko Hirose
広瀬　昌彦
Takaaki Kamimura
孝明 上村
Masahiko Akiyama
政彦 秋山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP6021384A priority Critical patent/JPS60202928A/ja
Publication of JPS60202928A publication Critical patent/JPS60202928A/ja
Publication of JPH0586648B2 publication Critical patent/JPH0586648B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP6021384A 1984-03-28 1984-03-28 光励起反応装置 Granted JPS60202928A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6021384A JPS60202928A (ja) 1984-03-28 1984-03-28 光励起反応装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6021384A JPS60202928A (ja) 1984-03-28 1984-03-28 光励起反応装置

Publications (2)

Publication Number Publication Date
JPS60202928A true JPS60202928A (ja) 1985-10-14
JPH0586648B2 JPH0586648B2 (enrdf_load_stackoverflow) 1993-12-13

Family

ID=13135647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6021384A Granted JPS60202928A (ja) 1984-03-28 1984-03-28 光励起反応装置

Country Status (1)

Country Link
JP (1) JPS60202928A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60218474A (ja) * 1984-04-13 1985-11-01 Ushio Inc 成膜方法
JPS6190421A (ja) * 1984-10-11 1986-05-08 Canon Inc 堆積膜形成方法
JPS62227089A (ja) * 1986-03-27 1987-10-06 Anelva Corp 表面処理方法および装置
JPS6380525A (ja) * 1986-09-24 1988-04-11 Semiconductor Energy Lab Co Ltd 被膜形成方法
JP2012149278A (ja) * 2011-01-17 2012-08-09 Mitsui Chemicals Inc シリコン含有膜の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60218474A (ja) * 1984-04-13 1985-11-01 Ushio Inc 成膜方法
JPS6190421A (ja) * 1984-10-11 1986-05-08 Canon Inc 堆積膜形成方法
JPS62227089A (ja) * 1986-03-27 1987-10-06 Anelva Corp 表面処理方法および装置
JPS6380525A (ja) * 1986-09-24 1988-04-11 Semiconductor Energy Lab Co Ltd 被膜形成方法
JP2012149278A (ja) * 2011-01-17 2012-08-09 Mitsui Chemicals Inc シリコン含有膜の製造方法

Also Published As

Publication number Publication date
JPH0586648B2 (enrdf_load_stackoverflow) 1993-12-13

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