JPS60202441A - 半導体装置用パタ−ン形成マスク - Google Patents
半導体装置用パタ−ン形成マスクInfo
- Publication number
- JPS60202441A JPS60202441A JP59061372A JP6137284A JPS60202441A JP S60202441 A JPS60202441 A JP S60202441A JP 59061372 A JP59061372 A JP 59061372A JP 6137284 A JP6137284 A JP 6137284A JP S60202441 A JPS60202441 A JP S60202441A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- glass substrate
- thickness
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 239000011521 glass Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 9
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 7
- 229920005591 polysilicon Polymers 0.000 claims abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 10
- 239000010453 quartz Substances 0.000 abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 239000011651 chromium Substances 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59061372A JPS60202441A (ja) | 1984-03-27 | 1984-03-27 | 半導体装置用パタ−ン形成マスク |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59061372A JPS60202441A (ja) | 1984-03-27 | 1984-03-27 | 半導体装置用パタ−ン形成マスク |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60202441A true JPS60202441A (ja) | 1985-10-12 |
| JPH0366656B2 JPH0366656B2 (enrdf_load_stackoverflow) | 1991-10-18 |
Family
ID=13169271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59061372A Granted JPS60202441A (ja) | 1984-03-27 | 1984-03-27 | 半導体装置用パタ−ン形成マスク |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60202441A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62153957A (ja) * | 1985-12-27 | 1987-07-08 | Hoya Corp | フォトマスクブランクとフォトマスク |
| JPS62229152A (ja) * | 1986-03-31 | 1987-10-07 | Arubatsuku Seimaku Kk | フオトマスクおよびその製造方法 |
| JPS62234163A (ja) * | 1986-04-04 | 1987-10-14 | Arubatsuku Seimaku Kk | フオトマスクおよびその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57157247A (en) * | 1981-03-23 | 1982-09-28 | Nec Corp | Optical exposure mask |
-
1984
- 1984-03-27 JP JP59061372A patent/JPS60202441A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57157247A (en) * | 1981-03-23 | 1982-09-28 | Nec Corp | Optical exposure mask |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62153957A (ja) * | 1985-12-27 | 1987-07-08 | Hoya Corp | フォトマスクブランクとフォトマスク |
| JPS62229152A (ja) * | 1986-03-31 | 1987-10-07 | Arubatsuku Seimaku Kk | フオトマスクおよびその製造方法 |
| JPS62234163A (ja) * | 1986-04-04 | 1987-10-14 | Arubatsuku Seimaku Kk | フオトマスクおよびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0366656B2 (enrdf_load_stackoverflow) | 1991-10-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |