JPS60200898A - 人工ダイヤモンドの析出生成装置 - Google Patents

人工ダイヤモンドの析出生成装置

Info

Publication number
JPS60200898A
JPS60200898A JP59058047A JP5804784A JPS60200898A JP S60200898 A JPS60200898 A JP S60200898A JP 59058047 A JP59058047 A JP 59058047A JP 5804784 A JP5804784 A JP 5804784A JP S60200898 A JPS60200898 A JP S60200898A
Authority
JP
Japan
Prior art keywords
chamber
reduced pressure
lower chamber
reaction
treated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59058047A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6327320B2 (enrdf_load_stackoverflow
Inventor
Noribumi Kikuchi
菊池　則文
Takayuki Shingyouchi
新行内　隆之
Hiroaki Yamashita
山下　博明
Akio Nishiyama
昭雄 西山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP59058047A priority Critical patent/JPS60200898A/ja
Publication of JPS60200898A publication Critical patent/JPS60200898A/ja
Publication of JPS6327320B2 publication Critical patent/JPS6327320B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59058047A 1984-03-26 1984-03-26 人工ダイヤモンドの析出生成装置 Granted JPS60200898A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59058047A JPS60200898A (ja) 1984-03-26 1984-03-26 人工ダイヤモンドの析出生成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59058047A JPS60200898A (ja) 1984-03-26 1984-03-26 人工ダイヤモンドの析出生成装置

Publications (2)

Publication Number Publication Date
JPS60200898A true JPS60200898A (ja) 1985-10-11
JPS6327320B2 JPS6327320B2 (enrdf_load_stackoverflow) 1988-06-02

Family

ID=13073014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59058047A Granted JPS60200898A (ja) 1984-03-26 1984-03-26 人工ダイヤモンドの析出生成装置

Country Status (1)

Country Link
JP (1) JPS60200898A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4940015A (en) * 1988-07-30 1990-07-10 Kabushiki Kaisha Kobe Seiko Sho Plasma reactor for diamond synthesis
US5200231A (en) * 1989-08-17 1993-04-06 U.S. Philips Corporation Method of manufacturing polycrystalline diamond layers
US5662877A (en) * 1989-08-23 1997-09-02 Tdk Corporation Process for forming diamond-like thin film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4940015A (en) * 1988-07-30 1990-07-10 Kabushiki Kaisha Kobe Seiko Sho Plasma reactor for diamond synthesis
US5200231A (en) * 1989-08-17 1993-04-06 U.S. Philips Corporation Method of manufacturing polycrystalline diamond layers
US5662877A (en) * 1989-08-23 1997-09-02 Tdk Corporation Process for forming diamond-like thin film

Also Published As

Publication number Publication date
JPS6327320B2 (enrdf_load_stackoverflow) 1988-06-02

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