JPS6327320B2 - - Google Patents

Info

Publication number
JPS6327320B2
JPS6327320B2 JP59058047A JP5804784A JPS6327320B2 JP S6327320 B2 JPS6327320 B2 JP S6327320B2 JP 59058047 A JP59058047 A JP 59058047A JP 5804784 A JP5804784 A JP 5804784A JP S6327320 B2 JPS6327320 B2 JP S6327320B2
Authority
JP
Japan
Prior art keywords
chamber
reduced pressure
lower chamber
reaction vessel
treated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59058047A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60200898A (ja
Inventor
Noribumi Kikuchi
Takayuki Shingyochi
Hiroaki Yamashita
Akio Nishama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP59058047A priority Critical patent/JPS60200898A/ja
Publication of JPS60200898A publication Critical patent/JPS60200898A/ja
Publication of JPS6327320B2 publication Critical patent/JPS6327320B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59058047A 1984-03-26 1984-03-26 人工ダイヤモンドの析出生成装置 Granted JPS60200898A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59058047A JPS60200898A (ja) 1984-03-26 1984-03-26 人工ダイヤモンドの析出生成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59058047A JPS60200898A (ja) 1984-03-26 1984-03-26 人工ダイヤモンドの析出生成装置

Publications (2)

Publication Number Publication Date
JPS60200898A JPS60200898A (ja) 1985-10-11
JPS6327320B2 true JPS6327320B2 (enrdf_load_stackoverflow) 1988-06-02

Family

ID=13073014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59058047A Granted JPS60200898A (ja) 1984-03-26 1984-03-26 人工ダイヤモンドの析出生成装置

Country Status (1)

Country Link
JP (1) JPS60200898A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02141494A (ja) * 1988-07-30 1990-05-30 Kobe Steel Ltd ダイヤモンド気相合成装置
US5200231A (en) * 1989-08-17 1993-04-06 U.S. Philips Corporation Method of manufacturing polycrystalline diamond layers
JP2837700B2 (ja) * 1989-08-23 1998-12-16 ティーディーケイ株式会社 ダイヤモンド様薄膜を形成する方法

Also Published As

Publication number Publication date
JPS60200898A (ja) 1985-10-11

Similar Documents

Publication Publication Date Title
JPS5927753B2 (ja) ダイヤモンドの合成法
JPS6327319B2 (enrdf_load_stackoverflow)
US5110405A (en) Method of manufacturing single-crystal diamond particles
EP0355657B1 (en) Method of depositing a tungsten film
JP3684797B2 (ja) 気相成長方法および気相成長装置
JPS6327320B2 (enrdf_load_stackoverflow)
JPS6320911B2 (enrdf_load_stackoverflow)
JPH01502182A (ja) 炭化ケイ素の製造
JPS6358799B2 (enrdf_load_stackoverflow)
JPH08225394A (ja) ダイヤモンドの気相合成方法
JPS60112698A (ja) ダイヤモンドの製造方法
JPH05213695A (ja) ダイヤモンド薄膜の堆積方法
JPH01192794A (ja) ダイヤモンドの気相合成法
JPS6224501B2 (enrdf_load_stackoverflow)
JPH0234917B2 (enrdf_load_stackoverflow)
JP2534081Y2 (ja) 人工ダイヤモンド析出装置
JPS60200896A (ja) 繊維状ダイヤモンドの合成法
JPH07240379A (ja) 薄膜形成法及びその装置
JPS6026666A (ja) 堆積膜製造装置
JP2534079Y2 (ja) 人工ダイヤモンド析出装置
JPH0823070B2 (ja) 気相成長方法
JPH0530906B2 (enrdf_load_stackoverflow)
JPS62158864A (ja) 硬質炭素膜被覆方法
JPS63206390A (ja) ダイヤモンド薄膜の作製方法
Orlowski et al. Low Temperature UV Photodeposition of Aluminum from TMA: Characterization and Control of Deposit Composition