JPS6358799B2 - - Google Patents

Info

Publication number
JPS6358799B2
JPS6358799B2 JP59041650A JP4165084A JPS6358799B2 JP S6358799 B2 JPS6358799 B2 JP S6358799B2 JP 59041650 A JP59041650 A JP 59041650A JP 4165084 A JP4165084 A JP 4165084A JP S6358799 B2 JPS6358799 B2 JP S6358799B2
Authority
JP
Japan
Prior art keywords
substrate
diamond
ultraviolet light
heated
reaction mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59041650A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60186499A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59041650A priority Critical patent/JPS60186499A/ja
Publication of JPS60186499A publication Critical patent/JPS60186499A/ja
Publication of JPS6358799B2 publication Critical patent/JPS6358799B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59041650A 1984-03-05 1984-03-05 人工ダイヤモンドの析出生成方法 Granted JPS60186499A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59041650A JPS60186499A (ja) 1984-03-05 1984-03-05 人工ダイヤモンドの析出生成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59041650A JPS60186499A (ja) 1984-03-05 1984-03-05 人工ダイヤモンドの析出生成方法

Publications (2)

Publication Number Publication Date
JPS60186499A JPS60186499A (ja) 1985-09-21
JPS6358799B2 true JPS6358799B2 (enrdf_load_stackoverflow) 1988-11-16

Family

ID=12614227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59041650A Granted JPS60186499A (ja) 1984-03-05 1984-03-05 人工ダイヤモンドの析出生成方法

Country Status (1)

Country Link
JP (1) JPS60186499A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4816286A (en) * 1985-11-25 1989-03-28 Showa Denko Kabushiki Kaisha Process for synthesis of diamond by CVD
JPH0776146B2 (ja) * 1987-10-14 1995-08-16 出光石油化学株式会社 ダイヤモンド膜の製造方法
US5340401A (en) * 1989-01-06 1994-08-23 Celestech Inc. Diamond deposition cell
US5252174A (en) * 1989-06-19 1993-10-12 Matsushita Electric Industrial Co., Ltd. Method for manufacturing substrates for depositing diamond thin films
US5110577A (en) * 1990-01-12 1992-05-05 Ford Motor Company Process of depositing a carbon film having metallic properties

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583636A (ja) * 1981-06-29 1983-01-10 Seiko Epson Corp 気相成長装置及び気相成長方法
JPS5927753B2 (ja) * 1981-11-25 1984-07-07 科学技術庁無機材質研究所長 ダイヤモンドの合成法

Also Published As

Publication number Publication date
JPS60186499A (ja) 1985-09-21

Similar Documents

Publication Publication Date Title
JPS6327319B2 (enrdf_load_stackoverflow)
JPS5927753B2 (ja) ダイヤモンドの合成法
JPS5927754B2 (ja) ダイヤモンドの合成法
US5108543A (en) Method of surface treatment
JPS6358799B2 (enrdf_load_stackoverflow)
JP4197204B2 (ja) 酸化マグネシウムの作製装置
JPS5987040A (ja) フイルム沈着法
JPH0733243B2 (ja) 光照射併用プラズマｃｖｄ法による硬質窒化ホウ素の製造法
JPH0351675B2 (enrdf_load_stackoverflow)
JPS60171295A (ja) 人工ダイヤモンドを蒸着生成する方法
JPH0518799B2 (enrdf_load_stackoverflow)
JPS6358798B2 (enrdf_load_stackoverflow)
JP2562921B2 (ja) 気相法ダイヤモンドの合成方法
JP2789922B2 (ja) Ｃｖｄ法による金膜の形成方法
JPH01192794A (ja) ダイヤモンドの気相合成法
KR0160581B1 (ko) 레이저 어블레이션 방법에 의한 다이아몬드 박막의 형성방법
JPH01148791A (ja) 人工ダイヤモンド膜の形成方法
JP2001081563A (ja) エルビウム添加水素化アモルファスシリコン薄膜の製造方法
JP2534080Y2 (ja) 人工ダイヤモンド析出装置
JPH054808A (ja) 窒化硼素膜の製造方法
JPH06334170A (ja) ダイヤモンドの電極構造及びその形成方法
JPH054807A (ja) 窒化硼素膜の製造方法
JPS60200898A (ja) 人工ダイヤモンドの析出生成装置
JPS60178622A (ja) 半導体装置の製造方法
JPH04119982A (ja) 窒化ホウ素膜の製造方法