JPS60192945A - マスク・プリント方法 - Google Patents

マスク・プリント方法

Info

Publication number
JPS60192945A
JPS60192945A JP59048802A JP4880284A JPS60192945A JP S60192945 A JPS60192945 A JP S60192945A JP 59048802 A JP59048802 A JP 59048802A JP 4880284 A JP4880284 A JP 4880284A JP S60192945 A JPS60192945 A JP S60192945A
Authority
JP
Japan
Prior art keywords
pattern
coordinates
chip
exposure
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59048802A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6333702B2 (enrdf_load_stackoverflow
Inventor
Satoshi Niihara
新井原　聡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59048802A priority Critical patent/JPS60192945A/ja
Publication of JPS60192945A publication Critical patent/JPS60192945A/ja
Publication of JPS6333702B2 publication Critical patent/JPS6333702B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP59048802A 1984-03-14 1984-03-14 マスク・プリント方法 Granted JPS60192945A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59048802A JPS60192945A (ja) 1984-03-14 1984-03-14 マスク・プリント方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59048802A JPS60192945A (ja) 1984-03-14 1984-03-14 マスク・プリント方法

Publications (2)

Publication Number Publication Date
JPS60192945A true JPS60192945A (ja) 1985-10-01
JPS6333702B2 JPS6333702B2 (enrdf_load_stackoverflow) 1988-07-06

Family

ID=12813342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59048802A Granted JPS60192945A (ja) 1984-03-14 1984-03-14 マスク・プリント方法

Country Status (1)

Country Link
JP (1) JPS60192945A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62183517A (ja) * 1986-02-07 1987-08-11 Canon Inc 露光方法
US4784182A (en) * 1987-10-05 1988-11-15 Nobuyuki Sugimura Bladder type accumulator associated with a sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62183517A (ja) * 1986-02-07 1987-08-11 Canon Inc 露光方法
US4784182A (en) * 1987-10-05 1988-11-15 Nobuyuki Sugimura Bladder type accumulator associated with a sensor

Also Published As

Publication number Publication date
JPS6333702B2 (enrdf_load_stackoverflow) 1988-07-06

Similar Documents

Publication Publication Date Title
US6498640B1 (en) Method to measure alignment using latent image grating structures
JP3402750B2 (ja) 位置合わせ方法及びそれを用いた素子の製造方法
KR19990083365A (ko) 반도체제조방법및제조장치,및그것에의해제조된반도체디바이스
KR101651810B1 (ko) 공작물 상에 연속적으로 패터닝된 층들 사이의 오버레이를 보상하기 위한 방법 및 장치
KR100237941B1 (ko) 노광장치 및 노광방법
US6239858B1 (en) Exposure method, exposure apparatus and semiconductor device manufactured by using the exposure apparatus
KR100271048B1 (ko) 얼라인먼트 방법
JP2001274073A (ja) 重ね合わせ露光方法及び露光システム
JPS6266631A (ja) ステツプ・アンド・リピ−ト露光装置
JP7369529B2 (ja) 露光装置およびアライメント方法
JPH09129551A (ja) 半導体素子の微細パターンアライメント方法
US6757629B2 (en) Calibration plate having accurately defined calibration pattern
JPS60192945A (ja) マスク・プリント方法
JPS60140721A (ja) マスク・プリント方法
JP3351382B2 (ja) 重ね合わせ精度測定方法。
US6662145B1 (en) Method, equipment, and recording medium for controlling exposure accuracy
US5373232A (en) Method of and articles for accurately determining relative positions of lithographic artifacts
JPH0672766B2 (ja) 位置検出装置
US11774863B2 (en) Induced displacements for improved overlay error metrology
JP3529967B2 (ja) アライメントマーク付きフォトマスク用ブランクスの製造方法
JP2764925B2 (ja) 半導体装置の製造方法
JPS63275115A (ja) 半導体装置のパタ−ン形成方法
JPH10308434A (ja) 位置決め装置、ミラー曲り検出方法、位置決め方法およびデバイス製造方法
JP2787904B2 (ja) 露光装置
JP3110796B2 (ja) レチクルアライメント方法及び露光装置