JPS6018738A - 投影露光装置 - Google Patents

投影露光装置

Info

Publication number
JPS6018738A
JPS6018738A JP58125889A JP12588983A JPS6018738A JP S6018738 A JPS6018738 A JP S6018738A JP 58125889 A JP58125889 A JP 58125889A JP 12588983 A JP12588983 A JP 12588983A JP S6018738 A JPS6018738 A JP S6018738A
Authority
JP
Japan
Prior art keywords
projection
mark
marks
slit
reticle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58125889A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0534619B2 (enrdf_load_stackoverflow
Inventor
Shoichi Tanimoto
昭一 谷元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Nippon Kogaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp, Nippon Kogaku KK filed Critical Nikon Corp
Priority to JP58125889A priority Critical patent/JPS6018738A/ja
Publication of JPS6018738A publication Critical patent/JPS6018738A/ja
Priority to US06/800,094 priority patent/US4629313A/en
Priority to US06/897,644 priority patent/US4711567A/en
Publication of JPH0534619B2 publication Critical patent/JPH0534619B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58125889A 1982-10-22 1983-07-11 投影露光装置 Granted JPS6018738A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58125889A JPS6018738A (ja) 1983-07-11 1983-07-11 投影露光装置
US06/800,094 US4629313A (en) 1982-10-22 1985-11-20 Exposure apparatus
US06/897,644 US4711567A (en) 1982-10-22 1986-08-18 Exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58125889A JPS6018738A (ja) 1983-07-11 1983-07-11 投影露光装置

Publications (2)

Publication Number Publication Date
JPS6018738A true JPS6018738A (ja) 1985-01-30
JPH0534619B2 JPH0534619B2 (enrdf_load_stackoverflow) 1993-05-24

Family

ID=14921422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58125889A Granted JPS6018738A (ja) 1982-10-22 1983-07-11 投影露光装置

Country Status (1)

Country Link
JP (1) JPS6018738A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0218924A (ja) * 1988-05-13 1990-01-23 Mrs Technol Inc フォトリソグラフィに用いられる低反射誤差の光学位置合せ装置
JPH07169685A (ja) * 1994-11-07 1995-07-04 Nikon Corp 露光方法
US5798838A (en) * 1996-02-28 1998-08-25 Nikon Corporation Projection exposure apparatus having function of detecting intensity distribution of spatial image, and method of detecting the same
US6525817B1 (en) 1995-02-21 2003-02-25 Nikon Corporation Inspection method and apparatus for projection optical systems
JP2003077814A (ja) * 2001-09-05 2003-03-14 Nikon Corp 荷電粒子線露光装置の結像性能の計測方法及びその計測装置、荷電粒子線露光装置
JP2003077813A (ja) * 2001-09-05 2003-03-14 Nikon Corp 荷電粒子線露光装置の結像性能の評価方法、荷電粒子線露光装置の調整方法、ビームぼけ計測装置及び荷電粒子線露光装置
JP2008135745A (ja) * 2007-11-22 2008-06-12 Nikon Corp 波面収差測定機及び投影露光装置
JP2008175809A (ja) * 2006-12-07 2008-07-31 Asml Netherlands Bv 検査方法および装置、リソグラフィ装置、リソグラフィ処理セルおよびデバイス製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5627414A (en) * 1979-08-10 1981-03-17 Optimetrix Corp Improved xxy addressable positioning device for object being handled having sensor for xxy address mark
JPS587136A (ja) * 1981-07-06 1983-01-14 Hitachi Ltd 投影式露光方法およびその装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5627414A (en) * 1979-08-10 1981-03-17 Optimetrix Corp Improved xxy addressable positioning device for object being handled having sensor for xxy address mark
JPS587136A (ja) * 1981-07-06 1983-01-14 Hitachi Ltd 投影式露光方法およびその装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0218924A (ja) * 1988-05-13 1990-01-23 Mrs Technol Inc フォトリソグラフィに用いられる低反射誤差の光学位置合せ装置
JPH07169685A (ja) * 1994-11-07 1995-07-04 Nikon Corp 露光方法
US6525817B1 (en) 1995-02-21 2003-02-25 Nikon Corporation Inspection method and apparatus for projection optical systems
US6850327B2 (en) 1995-02-21 2005-02-01 Nikon Corporation Inspection method and apparatus for projection optical systems
US5798838A (en) * 1996-02-28 1998-08-25 Nikon Corporation Projection exposure apparatus having function of detecting intensity distribution of spatial image, and method of detecting the same
JP2003077814A (ja) * 2001-09-05 2003-03-14 Nikon Corp 荷電粒子線露光装置の結像性能の計測方法及びその計測装置、荷電粒子線露光装置
JP2003077813A (ja) * 2001-09-05 2003-03-14 Nikon Corp 荷電粒子線露光装置の結像性能の評価方法、荷電粒子線露光装置の調整方法、ビームぼけ計測装置及び荷電粒子線露光装置
JP2008175809A (ja) * 2006-12-07 2008-07-31 Asml Netherlands Bv 検査方法および装置、リソグラフィ装置、リソグラフィ処理セルおよびデバイス製造方法
JP2008135745A (ja) * 2007-11-22 2008-06-12 Nikon Corp 波面収差測定機及び投影露光装置

Also Published As

Publication number Publication date
JPH0534619B2 (enrdf_load_stackoverflow) 1993-05-24

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