JPS60187080A - 半導体レ−ザ - Google Patents

半導体レ−ザ

Info

Publication number
JPS60187080A
JPS60187080A JP4340184A JP4340184A JPS60187080A JP S60187080 A JPS60187080 A JP S60187080A JP 4340184 A JP4340184 A JP 4340184A JP 4340184 A JP4340184 A JP 4340184A JP S60187080 A JPS60187080 A JP S60187080A
Authority
JP
Japan
Prior art keywords
layer
inp
buried
activation
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4340184A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0467355B2 (enrdf_load_stackoverflow
Inventor
Masaaki Oshima
大島　正晃
Noriyuki Hirayama
平山　則行
Naoki Takenaka
直樹 竹中
Yukihiro Kino
木野　幸浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4340184A priority Critical patent/JPS60187080A/ja
Publication of JPS60187080A publication Critical patent/JPS60187080A/ja
Publication of JPH0467355B2 publication Critical patent/JPH0467355B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP4340184A 1984-03-07 1984-03-07 半導体レ−ザ Granted JPS60187080A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4340184A JPS60187080A (ja) 1984-03-07 1984-03-07 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4340184A JPS60187080A (ja) 1984-03-07 1984-03-07 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS60187080A true JPS60187080A (ja) 1985-09-24
JPH0467355B2 JPH0467355B2 (enrdf_load_stackoverflow) 1992-10-28

Family

ID=12662747

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4340184A Granted JPS60187080A (ja) 1984-03-07 1984-03-07 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS60187080A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4975752A (en) * 1987-09-29 1990-12-04 Oki Electric Industry Co., Ltd. Light-emitting diode
JP2006270003A (ja) * 2005-03-25 2006-10-05 Hitachi Cable Ltd 半導体レーザ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4975752A (en) * 1987-09-29 1990-12-04 Oki Electric Industry Co., Ltd. Light-emitting diode
JP2006270003A (ja) * 2005-03-25 2006-10-05 Hitachi Cable Ltd 半導体レーザ装置

Also Published As

Publication number Publication date
JPH0467355B2 (enrdf_load_stackoverflow) 1992-10-28

Similar Documents

Publication Publication Date Title
JPH10308556A (ja) 半導体光素子およびその製造方法
JPH04397B2 (enrdf_load_stackoverflow)
JP2002299758A (ja) 複素結合型の分布帰還型半導体レーザ素子
JP2703784B2 (ja) 半導体レーザ素子
JPS61222189A (ja) 半導体レ−ザ
JPH08274295A (ja) 光半導体装置の製造方法
JPS60187080A (ja) 半導体レ−ザ
JPH09199791A (ja) 光半導体装置およびその製造方法
WO1990013162A1 (en) Cross-coupled quantum-well stripe laser array
JPH03268379A (ja) 半導体レーザ・チップおよびその製造方法
JPS63166281A (ja) 分布帰還型半導体レ−ザ装置
JP2852663B2 (ja) 半導体レーザ装置およびその製造方法
JP2606838B2 (ja) 分布帰還型半導体レーザ
JPS59127892A (ja) 半導体レ−ザとその製造方法
JPH07135368A (ja) 波長可変半導体レーザの製造方法
JPH0642583B2 (ja) 半導体レーザ装置
JPH02252284A (ja) 半導体レーザアレイ
JPS61220389A (ja) 集積型半導体レ−ザ
JPH0745907A (ja) 分布帰還型半導体レーザ
JPS60160682A (ja) 半導体レ−ザ
JPS60158686A (ja) 半導体レ−ザ
JPS61116896A (ja) 半導体レ−ザ装置
JPH02281681A (ja) 半導体レーザ
JPH03235390A (ja) 半導体レーザ
JPS6062177A (ja) 半導体レ−ザ