JPS601866A - 半導体光検出器 - Google Patents

半導体光検出器

Info

Publication number
JPS601866A
JPS601866A JP58110459A JP11045983A JPS601866A JP S601866 A JPS601866 A JP S601866A JP 58110459 A JP58110459 A JP 58110459A JP 11045983 A JP11045983 A JP 11045983A JP S601866 A JPS601866 A JP S601866A
Authority
JP
Japan
Prior art keywords
layer
region
electric field
electrons
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58110459A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0148664B2 (enExample
Inventor
Yoshiharu Horikoshi
佳治 堀越
Hiroshi Okamoto
岡本　紘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58110459A priority Critical patent/JPS601866A/ja
Publication of JPS601866A publication Critical patent/JPS601866A/ja
Publication of JPH0148664B2 publication Critical patent/JPH0148664B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP58110459A 1983-06-20 1983-06-20 半導体光検出器 Granted JPS601866A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58110459A JPS601866A (ja) 1983-06-20 1983-06-20 半導体光検出器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58110459A JPS601866A (ja) 1983-06-20 1983-06-20 半導体光検出器

Publications (2)

Publication Number Publication Date
JPS601866A true JPS601866A (ja) 1985-01-08
JPH0148664B2 JPH0148664B2 (enExample) 1989-10-20

Family

ID=14536243

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58110459A Granted JPS601866A (ja) 1983-06-20 1983-06-20 半導体光検出器

Country Status (1)

Country Link
JP (1) JPS601866A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2747154A1 (en) * 2012-12-21 2014-06-25 ams AG Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2747154A1 (en) * 2012-12-21 2014-06-25 ams AG Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode
WO2014096210A1 (en) * 2012-12-21 2014-06-26 Ams Ag Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode
US10128385B2 (en) 2012-12-21 2018-11-13 Ams Ag Lateral single-photon avalanche diode and method of producing a lateral single photon avalanche diode
US10522696B2 (en) 2012-12-21 2019-12-31 Ams Ag Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode

Also Published As

Publication number Publication date
JPH0148664B2 (enExample) 1989-10-20

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