JPS60184677A - 薄膜形成法及びそれに用いる基板保持・加熱装置 - Google Patents

薄膜形成法及びそれに用いる基板保持・加熱装置

Info

Publication number
JPS60184677A
JPS60184677A JP59039973A JP3997384A JPS60184677A JP S60184677 A JPS60184677 A JP S60184677A JP 59039973 A JP59039973 A JP 59039973A JP 3997384 A JP3997384 A JP 3997384A JP S60184677 A JPS60184677 A JP S60184677A
Authority
JP
Japan
Prior art keywords
substrate
case
thin film
substrate holding
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59039973A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0338237B2 (enrdf_load_stackoverflow
Inventor
Yoshihiro Imamura
今村　義宏
Masanori Shinohara
正典 篠原
Tomonori Ito
智徳 伊藤
Hiroaki Takeuchi
博昭 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59039973A priority Critical patent/JPS60184677A/ja
Publication of JPS60184677A publication Critical patent/JPS60184677A/ja
Publication of JPH0338237B2 publication Critical patent/JPH0338237B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP59039973A 1984-03-01 1984-03-01 薄膜形成法及びそれに用いる基板保持・加熱装置 Granted JPS60184677A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59039973A JPS60184677A (ja) 1984-03-01 1984-03-01 薄膜形成法及びそれに用いる基板保持・加熱装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59039973A JPS60184677A (ja) 1984-03-01 1984-03-01 薄膜形成法及びそれに用いる基板保持・加熱装置

Publications (2)

Publication Number Publication Date
JPS60184677A true JPS60184677A (ja) 1985-09-20
JPH0338237B2 JPH0338237B2 (enrdf_load_stackoverflow) 1991-06-10

Family

ID=12567896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59039973A Granted JPS60184677A (ja) 1984-03-01 1984-03-01 薄膜形成法及びそれに用いる基板保持・加熱装置

Country Status (1)

Country Link
JP (1) JPS60184677A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0342688A3 (en) * 1988-05-20 1991-04-17 Tegal Corporation Wafer clamp for plasma reactor
US5329097A (en) * 1993-05-19 1994-07-12 The United States Of America As Represented By The Secretary Of The Navy Compact substrate heater for use in an oxidizing atmosphere
DE102005056536A1 (de) * 2005-11-28 2007-05-31 Aixtron Ag CVD-Reaktor mit widerstandsbeheiztem Suszeptor
CN105441882A (zh) * 2015-11-20 2016-03-30 苏州赛森电子科技有限公司 溅射工艺中的批量硅片衬底处理装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101646080B1 (ko) * 2014-08-19 2016-08-08 주식회사 텍코드 요관경 기구

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0342688A3 (en) * 1988-05-20 1991-04-17 Tegal Corporation Wafer clamp for plasma reactor
US5329097A (en) * 1993-05-19 1994-07-12 The United States Of America As Represented By The Secretary Of The Navy Compact substrate heater for use in an oxidizing atmosphere
DE102005056536A1 (de) * 2005-11-28 2007-05-31 Aixtron Ag CVD-Reaktor mit widerstandsbeheiztem Suszeptor
CN105441882A (zh) * 2015-11-20 2016-03-30 苏州赛森电子科技有限公司 溅射工艺中的批量硅片衬底处理装置

Also Published As

Publication number Publication date
JPH0338237B2 (enrdf_load_stackoverflow) 1991-06-10

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