JPS55151899A - Adhering method for piezoelectric converter - Google Patents
Adhering method for piezoelectric converterInfo
- Publication number
- JPS55151899A JPS55151899A JP5994479A JP5994479A JPS55151899A JP S55151899 A JPS55151899 A JP S55151899A JP 5994479 A JP5994479 A JP 5994479A JP 5994479 A JP5994479 A JP 5994479A JP S55151899 A JPS55151899 A JP S55151899A
- Authority
- JP
- Japan
- Prior art keywords
- film
- contact
- heat
- metal film
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Transducers For Ultrasonic Waves (AREA)
Abstract
PURPOSE:To realize the high-grade adhesion which excels in the productivity, by securing a contact between the metal film of a low fusing point provided on one suuface of the piezoelectric converter and the evaporated film of gold or silver provided on one surface of the solid and then applying the pressure and the heat. CONSTITUTION:The vacuum evaporation of In film 3 is given to piezoelectric substance 1. And when necessary thin film 5 of Cr, Nichrome and the like is provided previously. In the same way, Au film 4 is evaporated via thin film 6 of Cr or the like onto solid 2 to which substance 1 is to be adhered. After this, a contact is secured in the air between films 3 and 4 along with application of pressure and then heat. As a result, the diffusion is caused between In and Au by the solid phase reaction, thus the alloy is produced. In this case, the evaporation is possible for the metal film formed into a pattern and using the mask since the contact is given in the air between films 3 and 4. Futhermore, the heat distortion which remains when the metal film is put again under the room temperature can be reduced because the heating temperature is low.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5994479A JPS55151899A (en) | 1979-05-16 | 1979-05-16 | Adhering method for piezoelectric converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5994479A JPS55151899A (en) | 1979-05-16 | 1979-05-16 | Adhering method for piezoelectric converter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55151899A true JPS55151899A (en) | 1980-11-26 |
Family
ID=13127756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5994479A Pending JPS55151899A (en) | 1979-05-16 | 1979-05-16 | Adhering method for piezoelectric converter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55151899A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014529919A (en) * | 2011-06-30 | 2014-11-13 | コミシリア ア レネルジ アトミック エ オ エナジーズ オルタネティヴズ | Method for manufacturing high temperature ultrasonic transducers using lithium niobate crystals brazed with gold and indium |
CN111799368A (en) * | 2020-06-29 | 2020-10-20 | 中国科学院上海微系统与信息技术研究所 | Preparation method of heterostructure film for reducing film peeling thermal stress |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5266386A (en) * | 1975-11-28 | 1977-06-01 | Fujitsu Ltd | Production of ultra-sonic oscillator |
-
1979
- 1979-05-16 JP JP5994479A patent/JPS55151899A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5266386A (en) * | 1975-11-28 | 1977-06-01 | Fujitsu Ltd | Production of ultra-sonic oscillator |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014529919A (en) * | 2011-06-30 | 2014-11-13 | コミシリア ア レネルジ アトミック エ オ エナジーズ オルタネティヴズ | Method for manufacturing high temperature ultrasonic transducers using lithium niobate crystals brazed with gold and indium |
US9425384B2 (en) | 2011-06-30 | 2016-08-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for manufacturing a high-temperature ultrasonic transducer using a lithium niobate crystal brazed with gold and indium |
CN111799368A (en) * | 2020-06-29 | 2020-10-20 | 中国科学院上海微系统与信息技术研究所 | Preparation method of heterostructure film for reducing film peeling thermal stress |
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