CN111799368A - Preparation method of heterostructure film for reducing film peeling thermal stress - Google Patents
Preparation method of heterostructure film for reducing film peeling thermal stress Download PDFInfo
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- CN111799368A CN111799368A CN202010602406.2A CN202010602406A CN111799368A CN 111799368 A CN111799368 A CN 111799368A CN 202010602406 A CN202010602406 A CN 202010602406A CN 111799368 A CN111799368 A CN 111799368A
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- 230000008646 thermal stress Effects 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 114
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052737 gold Inorganic materials 0.000 claims abstract description 52
- 239000010931 gold Substances 0.000 claims abstract description 52
- 229910052738 indium Inorganic materials 0.000 claims abstract description 42
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000000151 deposition Methods 0.000 claims abstract description 22
- 238000000137 annealing Methods 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims description 59
- 239000010408 film Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 36
- 238000005468 ion implantation Methods 0.000 claims description 21
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 8
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 8
- 230000007547 defect Effects 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
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- 238000002513 implantation Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
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- GPYPVKIFOKLUGD-UHFFFAOYSA-N gold indium Chemical compound [In].[Au] GPYPVKIFOKLUGD-UHFFFAOYSA-N 0.000 description 4
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
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Abstract
The invention relates to the field of semiconductor material preparation, and discloses a preparation method of a heterostructure film for reducing film peeling thermal stress, which comprises the following steps of firstly providing a heterostructure film substrate, wherein the heterostructure film substrate comprises a first surface and a second surface which are oppositely arranged; depositing a first indium layer and a first gold layer on the first surface in sequence to form a first substrate to be bonded; secondly, providing a support substrate; sequentially depositing a second indium layer and a second gold layer on the third surface of the support substrate to form a second substrate to be bonded; placing the first substrate to be bonded on the second substrate to be bonded, and contacting the first gold layer with the second gold layer to form a substrate to be bonded; and finally, applying acting force to the second surface, and simultaneously carrying out bonding, annealing, peeling and transferring on the substrate to be bonded to obtain the heterostructure film. The preparation method of the heterostructure film provided by the invention has the characteristics of improving the area of the piezoelectric film after peeling and transferring and being not easy to cause film cracking.
Description
Technical Field
The invention relates to the field of semiconductor material preparation, in particular to a preparation method of a heterostructure film for reducing film peeling thermal stress.
Background
In the preparation process of the semiconductor device, the stripping technology can avoid the problems of lattice mismatch and crystal mismatch in the heteroepitaxial growth process, so that the heterogeneous integration among mismatched materials is realized, and the stripping technology is widely applied to the realization of the heterogeneous integration of thin film materials.
Generally, the difference between the thermal expansion coefficient of the piezoelectric material and the thermal expansion coefficient of the substrate material is large, so that large thermal stress is introduced in subsequent stripping annealing to cause cracking, and further the piezoelectric material generates a strong discharge phenomenon under the action of the thermal stress, so that the transfer area and quality of the piezoelectric material film are reduced, and the preparation of the high-quality piezoelectric film is difficult to realize.
Disclosure of Invention
The invention aims to solve the technical problems that the piezoelectric film is easy to crack and has poor quality in the process of peeling off a transfer film due to large thermal stress in the process of preparing the piezoelectric film.
In order to solve the technical problem, the application discloses a preparation method of a heterostructure film for reducing film peeling thermal stress, which comprises the following steps:
providing a heterostructure thin film substrate, wherein the heterostructure thin film substrate comprises a first surface and a second surface which are oppositely arranged, and the heterostructure thin film substrate is made of lithium niobate or lithium tantalate;
depositing a first indium layer and a first gold layer on the first surface in sequence to form a first substrate to be bonded;
providing a support substrate;
sequentially depositing a second indium layer and a second gold layer on the third surface of the support substrate to form a second substrate to be bonded;
placing the first substrate to be bonded on the second substrate to be bonded, and contacting the first gold layer with the second gold layer to form a substrate to be bonded;
and applying acting force to the second surface, and simultaneously carrying out bonding, annealing, peeling and transferring on the substrate to be bonded to obtain the heterostructure film.
Optionally, the thickness of the first gold layer and the second gold layer is 50-500 nm;
the thickness of the first indium layer and the second indium layer is 50-5000 nanometers.
Optionally, the step of placing the first substrate to be bonded on the second substrate to be bonded, and contacting the first gold layer with the second gold layer, after forming the substrate to be bonded, further includes:
placing the substrate to be bonded in an annealing furnace;
the temperature of the annealing furnace is 156.1-461 ℃.
Optionally, the force is in the range of 100-1000 newtons.
Optionally, the material of the supporting substrate is one or more of silicon, silicon oxide, sapphire, diamond, aluminum nitride, gallium nitride, or silicon carbide.
Optionally, the method of depositing the first gold layer, the second gold layer, the first indium layer and the second indium layer comprises electron beam evaporation or magnetron sputtering.
Optionally, the process of sequentially depositing the first indium layer and the first gold layer is continuous;
the process of sequentially depositing the second indium layer and the second gold layer is continuous.
Optionally, the providing a heterostructure thin film substrate includes:
providing a thin film substrate;
and carrying out ion implantation on the top of the thin film substrate, and forming a defect layer in the thin film substrate to obtain the heterostructure thin film substrate.
Optionally, the ion implantation method includes using hydrogen ion implantation, helium ion implantation, neon ion implantation, or hydrogen-helium ion co-implantation.
Optionally, the temperature of the implanted ions is between 50 and 150 ℃;
the energy of the ion implantation is 1-2000 kilo electron volts;
the ion implantation dose is 1 × 1016～1.5×1017Per square centimeter.
By adopting the technical scheme, the preparation method of the heterostructure film for reducing the film peeling thermal stress has the following beneficial effects:
the preparation method of the heterostructure thin film comprises the steps of firstly, sequentially depositing a first indium layer and a first gold layer on a first surface of a heterostructure thin film substrate to form a first substrate to be bonded; secondly, sequentially depositing a second indium layer and a second gold layer on the third surface of the supporting substrate to form a second substrate to be bonded; placing the first substrate to be bonded on the second substrate to be bonded, and contacting the first gold layer with the second gold layer to form a substrate to be bonded; and finally, applying acting force to the second surface of the heterostructure thin film substrate, and simultaneously bonding and annealing the substrate to be bonded, since the first indium layer, the first gold layer, the second indium layer and the second gold layer start to melt in a high-temperature environment, so that the cross sections of the second surface and the first surface are free from binding force and present a free-flowing state, the two substrates will start to expand with respective independent thermal expansion coefficients, and will not introduce thermal stress due to the difference of the thermal expansion coefficients until the annealing temperature reaches the peeling temperature, the heterostructure thin film is peeled, although the bonding interface is already In a molten state and cannot provide a supporting force, the effect of supporting the substrate is still achieved due to the acting force above the bonding interface, the heterostructure film is peeled and transferred In a whole piece, the temperature is reduced and the heterostructure film is cooled, and an In-Au alloy is formed at the bonding interface. The melting point of the In-Au alloy is more than 461 ℃, which can completely meet the subsequent high-temperature process. Therefore, the piezoelectric film obtained by the process has the advantages of good quality and difficult splintering.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic process flow diagram of a heterostructure thin film of the present application;
FIG. 2 is a schematic view of the structure of the heterostructure thin film substrate of the present application;
FIG. 3 is a structural diagram of a first substrate to be bonded according to the present application;
FIG. 4 is a schematic view of the present application supporting a substrate;
FIG. 5 is a schematic view of a second substrate to be bonded according to the present application;
FIG. 6 is a schematic view of a structure of a substrate to be bonded according to the present application;
FIG. 7 is a schematic view of a heterostructure thin film structure of the present application;
FIG. 8 is a schematic view of the structure of the thin film substrate of the present application.
The following is a supplementary description of the drawings:
1-a support substrate; 101-a third surface; 2-a heterostructure thin film substrate; 201-a first surface; 202-a second surface; 203-a thin film substrate; 204-a defect layer; 3-a second substrate to be bonded; 301 — a second indium layer; 302-a second gold layer; 4 a first substrate to be bonded; 401 — a first indium layer; 402-a first gold layer; 5-indium-gold alloy; 6-stripped lithium niobate or lithium tantalate film.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the present application. In the description of the present application, it is to be understood that the terms "upper", "lower", "top", "bottom", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present application and simplifying the description, and do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. Moreover, the terms "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein.
Fig. 1 is a schematic process flow diagram of the heterostructure thin film of the present application, as shown in fig. 1. The application discloses a preparation method of a heterostructure film for reducing film peeling thermal stress, which comprises the following steps:
s101, as shown in FIG. 2, FIG. 2 is a schematic structural diagram of the heterostructure thin film substrate of the present application. Providing a heterostructure thin film substrate 2, wherein the heterostructure thin film substrate 2 comprises a first surface 201 and a second surface 202 which are oppositely arranged, and the heterostructure thin film substrate 2 is made of lithium niobate or lithium tantalate;
s102, as shown in FIG. 3, FIG. 3 is a schematic structural view of a first substrate to be bonded according to the present application. Depositing a first indium layer 401 and a first gold layer 402 on the first surface 201 in sequence to form a first substrate to be bonded 4;
s103, as shown in FIG. 4, FIG. 4 is a schematic view of the supporting substrate structure of the present application. Providing a support substrate 1;
s104, as shown in FIG. 5, FIG. 5 is a structural diagram of a second substrate to be bonded according to the present application. Sequentially depositing a second indium layer 301 and a second gold layer 302 on the third surface 101 of the support substrate 1 to form a second substrate 3 to be bonded;
s105, as shown in FIG. 6, FIG. 6 is a schematic structural diagram of the substrate to be bonded according to the present application. Placing the first substrate to be bonded 4 on the second substrate to be bonded 3, and contacting the first gold layer 402 with the second gold layer 302 to form a substrate to be bonded;
s106, as shown in FIG. 7, FIG. 7 is a schematic view of the heterostructure thin film structure of the present application. And applying acting force to the second surface 202, and simultaneously performing bonding, annealing, peeling and transferring on the substrate to be bonded to obtain the heterostructure thin film.
Because the technical proposal is in the process of bonding and removing the substrate to be bonded, because of high temperature environment, so that the first indium layer 401, the first gold layer 402, the second indium layer 301 and the second gold layer 302 start to melt, so that the cross-section of the second surface 202 and the first surface 201 is free-flowing without binding force, and at this time, the heterostructure thin film substrate 2 and the support substrate 1 will start to expand with their respective independent thermal expansion coefficients without introducing thermal stress due to the difference in thermal expansion coefficients until the annealing temperature reaches the peeling temperature, the above-mentioned heterostructure thin film is peeled off, although the bonding interface is already in a molten state and cannot provide a supporting force, the effect of supporting the substrate 1 is still achieved due to the acting force above, the heterostructure thin film is peeled off and transferred in a whole piece, the temperature is reduced and the indium-gold alloy 5 is formed at the bonding interface when the heterostructure thin film is cooled. The melting point of the indium-gold alloy 5 is more than 461 ℃, which can completely meet the subsequent high-temperature process. Therefore, the piezoelectric film obtained by the process has the advantages of good quality and difficult splintering.
In an alternative embodiment, as shown in fig. 8 and 2, fig. 8 is a schematic view of the structure of the thin film substrate of the present application. The step S101 includes:
providing a thin film substrate 203;
ion implantation is performed on the top of the thin film substrate 203 to form a defect layer 204 in the thin film substrate 203, so as to obtain the heterostructure thin film substrate 2, in step S106, the heterostructure thin film substrate 2 is at a preset peeling temperature, which is at least higher than 156.1 ℃, so that the heterostructure thin film substrate 2 is peeled and transferred along the defect layer 204, and then the remaining defect layer 204 is removed through post-processing to obtain the required heterostructure thin film, as can be seen from fig. 7, the heterostructure thin film has a structure of a support substrate 1, an indium-gold alloy 5 and a peeled lithium niobate or lithium tantalate thin film 6 in sequence from bottom to top.
In an alternative embodiment, the thickness of the first gold layer 402 and the second gold layer 302 is 50 to 500 nm; the thickness of the first indium layer 401 and the second indium layer 301 is 50-5000 nanometers.
In an optional implementation manner, after step S105, the method further includes:
placing the substrate to be bonded in an annealing furnace, specifically, horizontally placing the substrate to be bonded on a slide glass, and then placing the slide glass in the annealing furnace;
the annealing temperature of the annealing furnace is 156.1-461 ℃, that is, the annealing temperature of the annealing furnace is 156.1-461 ℃, wherein 156.1 ℃ is the melting point of indium, 461 ℃ is the melting point of indium-gold alloy 5, so that in the bonding and annealing process, the first indium layer 401 connected with the first surface 201 of the heterogeneous thin film structure and the second indium layer 301 connected with the third surface 101 of the supporting substrate 1 are melted, and further the first surface 201 and the third surface 101 are in a free flow state, which is beneficial for the heterogeneous thin film substrate 2 and the supporting substrate 1 to expand in respective thermal expansion states without introducing thermal stress, and meanwhile, since the second surface 202 is applied with acting force, the heterogeneous thin film can still be peeled and transferred under certain temperature conditions.
In an alternative embodiment, the force is in the range of 100 to 1000 newtons.
In an alternative embodiment, the material of the support substrate 1 is one or more of silicon, silicon oxide, sapphire, diamond, aluminum nitride, gallium nitride or silicon carbide, and preferably, the support substrate 1 is a silicon substrate, which has the advantages of low cost and good performance.
In an alternative embodiment, the method for depositing the first gold layer 402, the second gold layer 302, the first indium layer 401 and the second indium layer 301 includes electron beam evaporation or magnetron sputtering under high vacuum condition, and of course, the method for depositing the above indium and gold layers may also be molecular beam epitaxy, atomic vapor deposition or atomic layer deposition, etc. according to the actual requirement.
In an alternative embodiment, the sequential deposition of the first indium layer 401 and the first gold layer 402 is continuous; the process of sequentially depositing the second indium layer 301 and the second gold layer 302 is continuous, that is, the first gold layer 402 is deposited in situ immediately after the first indium layer 401 is deposited, so that the oxidation of indium can be reduced, and the method for depositing the second indium layer 301 and the second gold layer 302 is the same as that for depositing the first indium layer 401 and the first gold layer 402.
In an alternative embodiment, the method of ion implantation includes using hydrogen ion implantation, helium ion implantation, neon ion implantation, or hydrogen helium ion co-implantation.
In an optional embodiment, the temperature of the implanted ions is 50-150 ℃;
the energy of the ion implantation is 1-2000 kilo electron volts;
the ion implantation dose is 1 × 1016～1.5×1017Per square centimeter.
In summary, in the method for preparing the heterostructure thin film provided by the present application, the thermal stress in the peeling process is reduced, so that the transfer area and quality of the final heterostructure thin film are improved, specifically, the thermal stress introduced due to the difference of the thermal expansion coefficients of the heterostructure thin film substrate 2 and the support substrate 1 in the peeling process is reduced by adopting an indium-gold bonding method, and the heterostructure thin film in the present application is made of lithium niobate or lithium tantalate, which is an excellent piezoelectric material, and is widely applied to the preparation of radio frequency devices, such as bulk acoustic wave filters, and has a second-order nonlinear optical property, so that the heterostructure thin film is a good material for preparing optical devices. However, the direct bonding of the two materials and the silicon substrate can cause a strong discharge phenomenon, so that the transfer area and the quality of the lithium niobate and lithium tantalate films are reduced, and the transfer area and the quality of the lithium tantalate or lithium niobate films can be effectively improved by the preparation method provided by the application.
The above description is only exemplary of the present application and should not be taken as limiting, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. A preparation method of a heterostructure film for reducing film peeling thermal stress is characterized by comprising the following steps:
providing a heterostructure thin film substrate (2), wherein the heterostructure thin film substrate (2) comprises a first surface (201) and a second surface (202) which are oppositely arranged, and the heterostructure thin film substrate (2) is made of lithium niobate or lithium tantalate;
depositing a first indium layer (401) and a first gold layer (402) on the first surface (201) in sequence to form a first substrate (4) to be bonded;
providing a support substrate (1);
depositing a second indium layer (301) and a second gold layer (302) on the third surface (101) of the supporting substrate (1) in sequence to form a second substrate (3) to be bonded;
placing the first substrate to be bonded (4) on the second substrate to be bonded (3), and enabling the first gold layer (402) to be in contact with the second gold layer (302) to form a substrate to be bonded;
and applying acting force to the second surface (202), and simultaneously carrying out bonding, annealing, peeling and transferring on the substrate to be bonded to obtain the heterostructure film.
2. The method for preparing the heterostructure film for reducing the thermal stress of film peeling according to claim 1, wherein the thickness of the first gold layer (402) and the second gold layer (302) is 50-500 nm;
the thickness of the first indium layer (401) and the second indium layer (301) is 50-5000 nanometers.
3. The method for preparing the heterostructure film for reducing the thermal stress of film peeling according to claim 1, wherein the step of placing the first substrate to be bonded (4) on the second substrate to be bonded (3) and the first gold layer (402) is in contact with the second gold layer (302), and further comprises the step of, after the step of forming the substrate to be bonded:
placing the substrate to be bonded in an annealing furnace;
the temperature of the annealing furnace is 156.1-461 ℃.
4. The method for preparing a heterostructure film to reduce thermal stress of film peeling as claimed in claim 1, wherein the force is in the range of 100 to 1000 newtons.
5. The method for preparing the heterostructure film for reducing thermal stress of film peeling according to claim 1, wherein the material of the support substrate (1) is one or more of silicon, silicon oxide, sapphire, diamond, aluminum nitride, gallium nitride or silicon carbide.
6. The method for preparing the heterostructure film for reducing thermal stress of film stripping as set forth in claim 1, wherein the method for depositing the first gold layer (402), the second gold layer (302), the first indium layer (401) and the second indium layer (301) comprises electron beam evaporation or magnetron sputtering.
7. The method for preparing a heterostructure film to reduce thermal stress of thin film strip as set forth in claim 1 wherein the sequential deposition of the first indium layer (401) and the first gold layer (402) is continuous;
the sequential deposition of the second indium layer (301) and the second gold layer (302) is continuous.
8. The method for preparing a heterostructure thin film for reducing thermal stress of thin film peeling according to claim 1, wherein the providing of the heterostructure thin film substrate (2) comprises:
providing a thin film substrate (203);
and carrying out ion implantation on the top of the thin film substrate (203), and forming a defect layer (204) in the thin film substrate (203) to obtain the heterostructure thin film substrate (2).
9. The method for preparing a heterostructure film for reducing thermal stress of film peeling according to claim 8, wherein the ion implantation method comprises hydrogen ion implantation, helium ion implantation, neon ion implantation or hydrogen-helium ion co-implantation.
10. The method for preparing a heterostructure film for reducing thermal stress of film peeling according to claim 9, wherein the temperature of the implanted ions is 50-150 ℃;
the energy of the ion implantation is 1-2000 kilo electron volts;
the dosage of the ion implantation is 1 x 1016～1.5×1017Per square centimeter.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112467024A (en) * | 2020-11-24 | 2021-03-09 | 上海新微科技集团有限公司 | Preparation method of heterostructure thin film substrate |
| CN113284839A (en) * | 2021-05-21 | 2021-08-20 | 中国科学院上海微系统与信息技术研究所 | Heterogeneous bonding method and heterogeneous structure of diamond crystals |
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