JPS60180120A - アライメント方法 - Google Patents
アライメント方法Info
- Publication number
- JPS60180120A JPS60180120A JP59035332A JP3533284A JPS60180120A JP S60180120 A JPS60180120 A JP S60180120A JP 59035332 A JP59035332 A JP 59035332A JP 3533284 A JP3533284 A JP 3533284A JP S60180120 A JPS60180120 A JP S60180120A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- substrate
- mask
- holder
- alignment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59035332A JPS60180120A (ja) | 1984-02-28 | 1984-02-28 | アライメント方法 |
US07/186,773 US4883359A (en) | 1984-02-28 | 1988-04-25 | Alignment method and pattern forming method using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59035332A JPS60180120A (ja) | 1984-02-28 | 1984-02-28 | アライメント方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60180120A true JPS60180120A (ja) | 1985-09-13 |
JPH0362010B2 JPH0362010B2 (enrdf_load_stackoverflow) | 1991-09-24 |
Family
ID=12438874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59035332A Granted JPS60180120A (ja) | 1984-02-28 | 1984-02-28 | アライメント方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60180120A (enrdf_load_stackoverflow) |
-
1984
- 1984-02-28 JP JP59035332A patent/JPS60180120A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0362010B2 (enrdf_load_stackoverflow) | 1991-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4883359A (en) | Alignment method and pattern forming method using the same | |
JPS5968928A (ja) | 半導体装置の製造方法 | |
US20020009676A1 (en) | Method of forming small contact holes using alternative phase shift masks and negative photoresist | |
US4937162A (en) | Method of obtaining relatively aligned patterns on two opposite surfaces of an opaque slice | |
JPS60180120A (ja) | アライメント方法 | |
JPH0467613A (ja) | 微細コンタクトホールの形成方法 | |
JP2647835B2 (ja) | ウェハーの露光方法 | |
CN105988311A (zh) | 一种对准图形及其制作方法 | |
JPS63275115A (ja) | 半導体装置のパタ−ン形成方法 | |
JPH10213896A (ja) | レチクル | |
JPS60180119A (ja) | アライメントマ−ク作成方法 | |
JPS5842233A (ja) | パタ−ンマスクの作製方法 | |
JP2676572B2 (ja) | フォトマスク | |
JPS6312133A (ja) | パタ−ン形成基板 | |
JPH03180017A (ja) | 半導体装置の製造方法 | |
JPS5835538A (ja) | パタ−ンマスクの作製方法 | |
JPH03280526A (ja) | 半導体装置の製造方法 | |
JPH0470755A (ja) | パターン形成方法 | |
JPS61169850A (ja) | 写真製版法 | |
JPH0249418A (ja) | 半導体装置の製造方法 | |
JPS62193124A (ja) | パタ−ン位置合わせ方法 | |
JPS62125620A (ja) | 半導体装置の製造方法 | |
JP2006203032A (ja) | 素子の製造方法 | |
JPS60224224A (ja) | マスクアライメント方法 | |
JPS63272029A (ja) | 投影露光方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |