JPS6017952A - Image sensor - Google Patents
Image sensorInfo
- Publication number
- JPS6017952A JPS6017952A JP58126636A JP12663683A JPS6017952A JP S6017952 A JPS6017952 A JP S6017952A JP 58126636 A JP58126636 A JP 58126636A JP 12663683 A JP12663683 A JP 12663683A JP S6017952 A JPS6017952 A JP S6017952A
- Authority
- JP
- Japan
- Prior art keywords
- image sensor
- film
- transparent resin
- sensor element
- sealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 claims abstract description 13
- 229920005989 resin Polymers 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 108010010803 Gelatin Proteins 0.000 claims description 2
- 229920000159 gelatin Polymers 0.000 claims description 2
- 239000008273 gelatin Substances 0.000 claims description 2
- 235000019322 gelatine Nutrition 0.000 claims description 2
- 235000011852 gelatine desserts Nutrition 0.000 claims description 2
- 238000007789 sealing Methods 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】 本発明はイメージ・センサー装置の構造に関する。[Detailed description of the invention] The present invention relates to the structure of an image sensor device.
従来、半導体イメージ・センサーは、第１図に示すごと
く、素子１の表面にカラー・フィルター２等が形成され
たイメージ・センサー素子ヲセラミック・ステム３に組
立てられ、ガラス窓５をハーメチック・シールされたキ
ャップ４をステム３とハーメチック・シールする方法が
用いられるのが通例であった。Conventionally, a semiconductor image sensor, as shown in FIG. 1, includes an image sensor element having a color filter 2 formed on the surface of the element 1, assembled onto a ceramic stem 3, and a glass window 5 hermetically sealed. Usually, a method was used in which the cap 4 was hermetically sealed with the stem 3.
しかし、上記従来技術によると、セラミック部品が高価
な事及び、ハーメチック・シールに工数がかかる事等の
欠点があった。However, the above-mentioned conventional technology has drawbacks such as expensive ceramic parts and a time-consuming process for hermetic sealing.
本発明は、かかる従来技術の欠点をなくシ、低価格で製
作工数が少なくてすむ、小型のイメージ・センサー装置
を提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to eliminate the drawbacks of the prior art and provide a compact image sensor device that is inexpensive and requires fewer man-hours to manufacture.
上記目的を達成するための本発明の基本的な構成は、イ
メージ・センサーに於て、半導体イメ−ジ・センサー素
子を透明樹脂で封止することを特徴とすること、及び、
半導体イメージ・センサー素子表面にはゼラチンを染色
等して成るカラー・フィルターが画素に対応して形成さ
れて成り、該イメージ・センサー素子が透明樹脂で封止
されて成ることを特徴とすること、及び前記イメージ・
センサー素子のカラー・フィルター表面にはシリコン窒
化膜、シリコン酸化膜、あるいはアルミナ膜等のガラス
膜が形成されて成ることを特徴とする事、及び、少なく
ともイメージ・センサーを封止した透明樹脂表面にはシ
リコン窒化膜、シリコン酸化膜あるいはアルミナ膜等の
ガラス膜が形成されて成ることを特徴とする。The basic structure of the present invention for achieving the above object is that an image sensor is characterized in that a semiconductor image sensor element is sealed with a transparent resin;
Color filters made of dyed gelatin are formed on the surface of the semiconductor image sensor element corresponding to the pixels, and the image sensor element is sealed with a transparent resin; and said image・
A glass film such as a silicon nitride film, a silicon oxide film, or an alumina film is formed on the color filter surface of the sensor element, and at least the transparent resin surface sealing the image sensor is is characterized in that a glass film such as a silicon nitride film, a silicon oxide film, or an alumina film is formed.
以下、実施例により本発明を詳述する。Hereinafter, the present invention will be explained in detail with reference to Examples.
第２図は本発明の一実施例を示すイメージ・センサー装
置の断面図である。イメージ・センサー素子１１の表面
にはカラー・フィルター１２が形成され、該カラー・フ
ィルター１２の表面にはシリコン窒化膜１２が常温での
光ＯＶＤ法により形成され、該素子を金属フレーム１４
に組み立てられた後、透明樹脂１５に封止されたもので
ある。FIG. 2 is a sectional view of an image sensor device showing one embodiment of the present invention. A color filter 12 is formed on the surface of the image sensor element 11, a silicon nitride film 12 is formed on the surface of the color filter 12 by optical OVD method at room temperature, and the element is mounted on a metal frame 14.
After being assembled, it is sealed in transparent resin 15.
第３図は本発明によるその他の実施例であり、カラー・
フィルターの付けられたイメージ・センサー素子２１を
金属リード・フレーム２２に組立て後透明樹脂２３で封
止し、該樹脂２３の表面に光ＯＶＤ法によりＳｉ３Ｎ４
膜２４を形成したものである。FIG. 3 shows another embodiment according to the present invention, in which a color
After assembling the image sensor element 21 with the filter attached to the metal lead frame 22, it is sealed with a transparent resin 23, and the surface of the resin 23 is coated with Si3N4 by optical OVD method.
A film 24 is formed thereon.
上記の如く、透明樹脂封止したイメージ・センサー表面
又は封止樹脂表面をガラス等で保護することにより、イ
メージ・センサーの光透過機能を有しつつ、且つ、耐湿
性の良い、低コストで小型のイメージ・センサーを提供
できる効果がある。As mentioned above, by protecting the surface of an image sensor sealed with a transparent resin or the surface of the sealing resin with glass, etc., it is possible to create a low-cost, small-sized image sensor that has the light transmission function of an image sensor and has good moisture resistance. It is effective in providing an image sensor of
第１図は従来技術によるイメージ・センサー装置の断面
図、第２図及び第３図は本発明によるイメージ・センサ
ー装置の実施例を示す断面図である。
１．１１．２１・・・・・・イメージ・センサー素子２
．１２・・・・・・カラー会フィルター３・・・・・・
セラミック・ステム
４……キヤツプ
５・・・・・・ガラス窓
１３．２４・・・・・・ガラス層
１４．２２・・・・・・リードΦフレーム１５．２．！
ｌ・・・・・・透明樹脂
具 上
第１図
）
第２図FIG. 1 is a cross-sectional view of an image sensor device according to the prior art, and FIGS. 2 and 3 are cross-sectional views showing an embodiment of an image sensor device according to the present invention. 1.11.21... Image sensor element 2
．． 12...Color meeting filter 3...
Ceramic stem 4...Cap 5...Glass window 13.24...Glass layer 14.22...Lead Φ frame 15.2. !
l...Transparent resin tool (Fig. 1 above) Fig. 2
Claims (1)
することを特徴とするイメージ・センサー。 Ｚ 半導体イメージ・センサー素子表面にはゼラチン等
を染色等して成るカラー・フィルターが画素に対応して
形成されて成ることを特徴とする特許請求の範囲第１項
記載のイメージ・センサー。 ３、 カラー・フィルター表面にはシリコン窒化膜、シ
リコン酸化膜、あるいはアルミナ膜等のガラス膜が形成
されて成ることを特徴とする特許請求の範囲ｆＥ２項記
載のイメージ・センサー。 ４、 少なくとも透明樹脂表面にはシリコン窒化膜、シ
リコン酸化膜あるいはアルミナ膜等のガラス膜が形成さ
れて成ることを特徴とする特許請求の範囲第１項並びに
第２項記載のイメージ・センサ[Claims] 1. An image sensor characterized in that a semiconductor image sensor element is sealed with a transparent resin. Z. The image sensor according to claim 1, wherein color filters made of dyed gelatin or the like are formed on the surface of the semiconductor image sensor element corresponding to the pixels. 3. The image sensor according to claim fE2, wherein a glass film such as a silicon nitride film, a silicon oxide film, or an alumina film is formed on the surface of the color filter. 4. The image sensor according to claims 1 and 2, characterized in that a glass film such as a silicon nitride film, a silicon oxide film, or an alumina film is formed on at least the surface of the transparent resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58126636A JPS6017952A (en) | 1983-07-12 | 1983-07-12 | Image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58126636A JPS6017952A (en) | 1983-07-12 | 1983-07-12 | Image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6017952A true JPS6017952A (en) | 1985-01-29 |
Family
ID=14940096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58126636A Pending JPS6017952A (en) | 1983-07-12 | 1983-07-12 | Image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6017952A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6268251U (en) * | 1985-10-18 | 1987-04-28 | ||
| JPS62196868A (en) * | 1986-02-24 | 1987-08-31 | Seiko Epson Corp | Color solid-state image sensor |
| JPH02170557A (en) * | 1988-12-23 | 1990-07-02 | Seikosha Co Ltd | Semiconductor sealing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840664A (en) * | 1971-09-30 | 1973-06-14 | ||
| JPS5598875A (en) * | 1979-01-05 | 1980-07-28 | Hitachi Ltd | Semiconductor device with photocell |
| JPS57124983A (en) * | 1981-01-28 | 1982-08-04 | Hitachi Ltd | Color solid-state image pickup element |
-
1983
- 1983-07-12 JP JP58126636A patent/JPS6017952A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840664A (en) * | 1971-09-30 | 1973-06-14 | ||
| JPS5598875A (en) * | 1979-01-05 | 1980-07-28 | Hitachi Ltd | Semiconductor device with photocell |
| JPS57124983A (en) * | 1981-01-28 | 1982-08-04 | Hitachi Ltd | Color solid-state image pickup element |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6268251U (en) * | 1985-10-18 | 1987-04-28 | ||
| JPS62196868A (en) * | 1986-02-24 | 1987-08-31 | Seiko Epson Corp | Color solid-state image sensor |
| JPH02170557A (en) * | 1988-12-23 | 1990-07-02 | Seikosha Co Ltd | Semiconductor sealing method |
| JPH0558654B2 (en) * | 1988-12-23 | 1993-08-27 | Seikosha Kk |
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