JPS57124983A - Color solid-state image pickup element - Google Patents
Color solid-state image pickup elementInfo
- Publication number
- JPS57124983A JPS57124983A JP56010232A JP1023281A JPS57124983A JP S57124983 A JPS57124983 A JP S57124983A JP 56010232 A JP56010232 A JP 56010232A JP 1023281 A JP1023281 A JP 1023281A JP S57124983 A JPS57124983 A JP S57124983A
- Authority
- JP
- Japan
- Prior art keywords
- film
- color filter
- sputtering method
- organic color
- image pickup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 230000001681 protective effect Effects 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000005520 cutting process Methods 0.000 abstract 1
- 238000001755 magnetron sputter deposition Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000011253 protective coating Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
Abstract
PURPOSE:To achieve high quality, by preventing foreign materials such as grinder particles and Si chips at cutting process from being invaded on the surface of protective film, by the formation of an SiO2 film on an organic color filter film as a protective film. CONSTITUTION:Taking into consideration that the heat resistance of organic color filter films 2a, 2b is around 180-200 deg.C, a surface protective coating film 8 consisting of a sputtered SiO2 film is formed on an organic color filter film 2b with a low temperature sputtering method at a temperature below the above mentioned value. In this case, the low temperature sputtering method does not rise to the temperature of 300-600 deg.C as the CVD method. Especially, when the magnetron sputtering method is used, the SiO2 film can be formed at 50-100 deg.C and no damage is given to the filter film 2b.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56010232A JPS57124983A (en) | 1981-01-28 | 1981-01-28 | Color solid-state image pickup element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56010232A JPS57124983A (en) | 1981-01-28 | 1981-01-28 | Color solid-state image pickup element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57124983A true JPS57124983A (en) | 1982-08-04 |
Family
ID=11744540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56010232A Pending JPS57124983A (en) | 1981-01-28 | 1981-01-28 | Color solid-state image pickup element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57124983A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59141278A (en) * | 1983-02-02 | 1984-08-13 | Fuji Xerox Co Ltd | Photoelectric conversion element and manufacture thereof |
| JPS6017952A (en) * | 1983-07-12 | 1985-01-29 | Seiko Epson Corp | Image sensor |
| JPH07270827A (en) * | 1994-12-21 | 1995-10-20 | Seiko Epson Corp | Production for liquid crystal display device |
| US7170184B2 (en) * | 2001-11-07 | 2007-01-30 | Micron Technology, Inc. | Treatment of a ground semiconductor die to improve adhesive bonding to a substrate |
-
1981
- 1981-01-28 JP JP56010232A patent/JPS57124983A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59141278A (en) * | 1983-02-02 | 1984-08-13 | Fuji Xerox Co Ltd | Photoelectric conversion element and manufacture thereof |
| JPS6017952A (en) * | 1983-07-12 | 1985-01-29 | Seiko Epson Corp | Image sensor |
| JPH07270827A (en) * | 1994-12-21 | 1995-10-20 | Seiko Epson Corp | Production for liquid crystal display device |
| US7170184B2 (en) * | 2001-11-07 | 2007-01-30 | Micron Technology, Inc. | Treatment of a ground semiconductor die to improve adhesive bonding to a substrate |
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