JPS55105385A - Photoconductive element and its manufacture - Google Patents

Photoconductive element and its manufacture

Info

Publication number
JPS55105385A
JPS55105385A JP1244779A JP1244779A JPS55105385A JP S55105385 A JPS55105385 A JP S55105385A JP 1244779 A JP1244779 A JP 1244779A JP 1244779 A JP1244779 A JP 1244779A JP S55105385 A JPS55105385 A JP S55105385A
Authority
JP
Japan
Prior art keywords
vacuum
layer
treated
positive hole
preventive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1244779A
Other languages
Japanese (ja)
Inventor
Shinichiro Ishihara
Takao Chikamura
Shinji Fujiwara
Shoichi Fukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1244779A priority Critical patent/JPS55105385A/en
Publication of JPS55105385A publication Critical patent/JPS55105385A/en
Pending legal-status Critical Current

Links

Landscapes

  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To obtain a transparent protective film with high performace by vacuum depositioning SiOx (1≤x≤2) or ZnS onto the heterojunction of the positive hole preventive layer and photoconductive substance (Zn1-xCdxTe)1-y(In2Te3)y.
CONSTITUTION: The SnO2 layer 11 as an electrode of the positive hole preventive layer is formed on the glass substrate 10 by the CVD method. Next the positive hole preventive layer 12 of ZnSe and the photoconductive substance (Zn0.7Cd0.3Te)0.95 (In2Te3)0.05 are laminated on the layer 11 by the vacuum deposition method and is heat-treated in a vacuum. And it is treated by spattering with a gas mixture of Ar and O2 by making (In2O3)0.9(SnO2)0.1 as a target to form the transparent electrode 14 and is heat-treated at temperature of 200°C in the air, the SiO or ZnS film 15 is formed by the vacuum deposition method last. In this way, a high sensitive photoconductive element with less dark current can be obtained, which is capable of holding the characteristic even in an environment except vacuum.
COPYRIGHT: (C)1980,JPO&Japio
JP1244779A 1979-02-06 1979-02-06 Photoconductive element and its manufacture Pending JPS55105385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1244779A JPS55105385A (en) 1979-02-06 1979-02-06 Photoconductive element and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1244779A JPS55105385A (en) 1979-02-06 1979-02-06 Photoconductive element and its manufacture

Publications (1)

Publication Number Publication Date
JPS55105385A true JPS55105385A (en) 1980-08-12

Family

ID=11805579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1244779A Pending JPS55105385A (en) 1979-02-06 1979-02-06 Photoconductive element and its manufacture

Country Status (1)

Country Link
JP (1) JPS55105385A (en)

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