JPS5572340A - Method for manufacturing image pickup tube target - Google Patents

Method for manufacturing image pickup tube target

Info

Publication number
JPS5572340A
JPS5572340A JP14545678A JP14545678A JPS5572340A JP S5572340 A JPS5572340 A JP S5572340A JP 14545678 A JP14545678 A JP 14545678A JP 14545678 A JP14545678 A JP 14545678A JP S5572340 A JPS5572340 A JP S5572340A
Authority
JP
Japan
Prior art keywords
heat treatment
layer
image pickup
temperature
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14545678A
Other languages
Japanese (ja)
Inventor
Takuo Shibata
Shinji Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14545678A priority Critical patent/JPS5572340A/en
Publication of JPS5572340A publication Critical patent/JPS5572340A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To increase the sensitivity in the long wavelength region, by controlling the substrate temperature within a predetermined range during the formation of a second layer film and then carrying out a predetermined two step heat treatment.
CONSTITUTION: On a glass substrate having a transparent conductive film on it, a film consisting of one or more material selected from the group consisting of ZnS, ZnSe, CdS is formed as a first layer. Then, on this first layer, a second layer consisting of (ZnxCd1-xTe)y(In2Te3)1-y, (0≤x≤1, 0.7≤y≤1) is formed at a substrate temperature within the range of 205W230°C. Then, a first heat treatment for this substrate is carried out in an inert gas or in vacuum at a temperature within the range of 500W600°C, for 3minW1hr, and thereafter, a second heat treatment is carried out at a lower temperature than the first heat treatment.
COPYRIGHT: (C)1980,JPO&Japio
JP14545678A 1978-11-25 1978-11-25 Method for manufacturing image pickup tube target Pending JPS5572340A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14545678A JPS5572340A (en) 1978-11-25 1978-11-25 Method for manufacturing image pickup tube target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14545678A JPS5572340A (en) 1978-11-25 1978-11-25 Method for manufacturing image pickup tube target

Publications (1)

Publication Number Publication Date
JPS5572340A true JPS5572340A (en) 1980-05-31

Family

ID=15385641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14545678A Pending JPS5572340A (en) 1978-11-25 1978-11-25 Method for manufacturing image pickup tube target

Country Status (1)

Country Link
JP (1) JPS5572340A (en)

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