JPS59224145A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS59224145A JPS59224145A JP58097818A JP9781883A JPS59224145A JP S59224145 A JPS59224145 A JP S59224145A JP 58097818 A JP58097818 A JP 58097818A JP 9781883 A JP9781883 A JP 9781883A JP S59224145 A JPS59224145 A JP S59224145A
- Authority
- JP
- Japan
- Prior art keywords
- cap
- base
- light
- glass
- sealing material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 239000011521 glass Substances 0.000 claims abstract description 46
- 238000007789 sealing Methods 0.000 claims abstract description 20
- 239000003566 sealing material Substances 0.000 claims abstract description 15
- 230000002093 peripheral effect Effects 0.000 claims abstract description 9
- 239000008188 pellet Substances 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 abstract description 4
- 230000005496 eutectics Effects 0.000 abstract description 3
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 abstract description 2
- 239000003344 environmental pollutant Substances 0.000 abstract 1
- 231100000719 pollutant Toxicity 0.000 abstract 1
- 239000011230 binding agent Substances 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 238000005219 brazing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
［技術分野］
本発明は半導体装置、特に、半導体ペレットをキャビテ
ィ内に取り付けたパッケージのベースを透光性キャップ
で封止する型式の半導体装置に適用して有効な技術に関
する。[Detailed Description of the Invention] [Technical Field] The present invention is a technology that is effective when applied to semiconductor devices, particularly semiconductor devices of a type in which a base of a package in which a semiconductor pellet is attached in a cavity is sealed with a transparent cap. Regarding.
［背景技術］
半導体装置のうち、たとえば、ホトセンサとして用いら
れる半導体装置においては、光をホトセンサに通過させ
るためにパッケージの封止用キャップとして透明ガラス
等よりなる透光性キャンプが用いられている（たとえば
昭和５７年１０月発行の日立半導体製品一覧表の７４Ｐ
）。[Background Art] Among semiconductor devices, for example, in semiconductor devices used as photosensors, a translucent camp made of transparent glass or the like is used as a sealing cap of a package to allow light to pass through the photosensor. For example, page 74 of the Hitachi Semiconductor Product List published in October 1982.
).
このような半導体装置の場合、透光性キャップとしての
透明ガラスキャンプをパッケージのベースに対して封止
するために低融点ガラスよりなるフリットガラスを透明
ガラスの周辺部裏面に焼結させたものを用いて封止行う
ことが考えられる。In the case of such semiconductor devices, a frit glass made of low melting point glass is sintered on the back surface of the peripheral part of the transparent glass in order to seal the transparent glass camp as a light-transmitting cap against the base of the package. It is conceivable that sealing can be performed using
しかしながら、この透明ガラスキャップの封止方式では
、フリットガラスを透明ガラスに直接焼結させる際にフ
リットガラス中のバインダ等の無機物が飛散して透明ガ
ラスの中央部裏面に付着してしまう。このような透明ガ
ラス面へのバインダ等の付着が起こると、そのバインダ
等が光の透過を阻害する原因物質となってホトセンサの
特性を損なうという問題がある。However, in this transparent glass cap sealing method, when the frit glass is directly sintered onto the transparent glass, inorganic substances such as binders in the frit glass scatter and adhere to the back surface of the central portion of the transparent glass. When such a binder or the like adheres to the transparent glass surface, there is a problem that the binder or the like becomes a substance that obstructs the transmission of light and impairs the characteristics of the photosensor.
そこで、透明ガラス面へのバインダ等の付着を防止する
ため、透明ガラスの中央部を付着防止フィルムで覆って
フリットガラスの焼成を行うことが考えられるが、付着
防止フィルムの材料費や製作費が高くなり、工数も増加
するので、コストが上昇するという問題がある。Therefore, in order to prevent the adhesion of binder etc. to the transparent glass surface, it may be possible to cover the center of the transparent glass with an adhesion prevention film and then fire the frit glass, but the material and production costs of the adhesion prevention film are high. There is a problem in that the cost increases because the cost increases and the number of man-hours also increases.
［発明の目的］
本発明の目的は、透光性キヤ・ノブへの汚染物質の付着
を防止できる半導体装置を提供することにある。[Object of the Invention] An object of the present invention is to provide a semiconductor device that can prevent contaminants from adhering to a translucent can knob.
本発明の他の１つの目的は、低コストで製造できる半導
体装置を提供することにある。Another object of the present invention is to provide a semiconductor device that can be manufactured at low cost.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
［発明の概要コ
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.
すなわち、透光性キャップには封止材を付着せず、封止
材は透光性キャップとは別の封止部材に付着させておく
ことにより、前記目的を達成することができる。That is, the above object can be achieved by not attaching the sealing material to the translucent cap, but by attaching the sealing material to a sealing member separate from the translucent cap.
［実施例１］
第１図は本発明の一実施例である半導体装置の斜視図、
第２図はその透明ガラスキャ・ノブの裏面側から見た斜
視図、第３図（ａ）、ｔｂ＞はそれぞれ封止用リントの
裏面側から見た斜視図とその断面図、第４図は本実施例
の半導体装置の拡大断面図である。[Example 1] FIG. 1 is a perspective view of a semiconductor device which is an example of the present invention.
Fig. 2 is a perspective view of the transparent glass cap knob as seen from the back side, Fig. 3(a) and tb> are perspective views and cross-sectional views of the sealing lint as seen from the back side respectively, and Fig. 4 is a perspective view of the transparent glass cap knob as seen from the back side. FIG. 2 is an enlarged cross-sectional view of the semiconductor device of this example.
この実施例１においては、パンケージのセラミックベー
ス１のキャビティ２内にホトセンサ用の受光素子として
の半導体ペレ・ノド３がたとえば金−シリコン（Ａｕ−
３ｔ）共晶により取り付けられ、その半導体ペレット３
の電極部はベース１の導電配線とワイヤ４で電気的に接
続されている。In this embodiment 1, a semiconductor pele node 3 as a light receiving element for a photosensor is placed in a cavity 2 of a ceramic base 1 of a pan cage, for example, a gold-silicon (Au-silicon).
3t) Attached by eutectic, the semiconductor pellet 3
The electrode portion is electrically connected to the conductive wiring of the base 1 by a wire 4.
ベース１の導電配線は該ベース１の内部配線を経て、該
ベース１の両側面にろう付は等で固着された外部リード
５に電気的に接続されている。The conductive wiring of the base 1 is electrically connected via the internal wiring of the base 1 to external leads 5 fixed to both sides of the base 1 by brazing or the like.
一方、前記ベース１のキャビティ２の上部の段部には、
透光性キャンプとしての透明ガラスキャンプ６が載置さ
れている。この透明ガラスキャ・ノブ６は第２図に示さ
れるように、その表面側は勿論、裏面側にも何も付着さ
れていない。On the other hand, in the upper step of the cavity 2 of the base 1,
A transparent glass camp 6 as a translucent camp is placed. As shown in FIG. 2, this transparent glass cap knob 6 has nothing attached to it, not only on its front side but also on its back side.
また、この透明ガラスキャップ６の上面側の周辺部から
その周囲のベース１の上面にかけて、たとえば低融点ガ
ラスよりなるフリットガラス８（封止材）を周辺部裏面
に付着させた封止用リッド７ （封止材部）が載置され
、該フリットガラス８で気密封止されている。この封止
用リッド７はたとえばセラミック等で作られ、第３図（
ａ）、（ｂ）に示すように、その中央部には光を通過さ
せるための開口９が長方形状に形成され、この周辺部裏
面に前記フリットガラス８が焼結されている。Furthermore, a sealing lid 7 is provided from the peripheral part of the upper surface side of the transparent glass cap 6 to the upper surface of the base 1 around it, with a frit glass 8 (sealing material) made of, for example, low-melting glass adhered to the back surface of the peripheral part. (sealing material part) is mounted and hermetically sealed with the frit glass 8. This sealing lid 7 is made of ceramic, for example, and is shown in FIG.
As shown in a) and (b), a rectangular opening 9 for passing light is formed in the center, and the frit glass 8 is sintered on the back surface of the peripheral portion.
本実施例においては、透明ガラスキャップ６には封止材
が付着されておらず、封止材の一例としてのフリットガ
ラス８は透明ガラスキャップ６とは別体の開口９付きの
封止用リッド７に予め焼結されているので、フリットガ
ラス８の焼成時に該フリットガラス８中のバインダの如
き無機物が飛散しても、その飛散物が透明ガラスキャッ
プ６の面に付着することはない。In this embodiment, no sealing material is attached to the transparent glass cap 6, and the frit glass 8 as an example of the sealing material is a sealing lid with an opening 9 that is separate from the transparent glass cap 6. Since the transparent glass cap 7 is sintered in advance, even if inorganic substances such as binder in the frit glass 8 are scattered during firing of the frit glass 8, the scattered substances will not adhere to the surface of the transparent glass cap 6.
したがって、透明ガラスキャップ６は汚染物質が付着し
ていない清浄状態に保たれ、光の透過を妨げられること
がなく、ホトセンサ用の受光素子としての半導体ベレ・
ノド３の特性が損なわれることがない。Therefore, the transparent glass cap 6 is kept in a clean state free from contaminants, and the transmission of light is not obstructed.
The characteristics of the throat 3 are not impaired.
また、本実施例では、透明ガラスキャ・７プ６への汚染
物質の付着を防止するために特別なフィルム等を用いる
必要がなく、しかも封止用のり・ノド７は安価に製作で
きるので、コストを大巾に低減することが可能である。In addition, in this embodiment, there is no need to use a special film to prevent contaminants from adhering to the transparent glass cap 7, and the sealing glue 7 can be manufactured at low cost. It is possible to significantly reduce the
［実施例２］
第５図は本発明の実施例２による半導体装置の拡大断面
図である。[Example 2] FIG. 5 is an enlarged sectional view of a semiconductor device according to Example 2 of the present invention.
この実施例２においては、封止用リッド７の裏面が階段
状に形成され、その裏面に焼結されたフリットガラス８
が透明ガラスキャ・ノブ６の周囲の外側にまで回り込ん
だ構造であり、フリットガラス８による気密封止性がよ
り良好となる。In this second embodiment, the back surface of the sealing lid 7 is formed in a stepped shape, and the frit glass 8 is sintered on the back surface.
This structure extends to the outside of the periphery of the transparent glass can knob 6, and the hermetic sealing performance of the frit glass 8 is improved.
し効果］
（ｌ）、中央部に開口を有しかつ周辺部裏面Ｇこ封止材
を付着させた封止部材を透光性キャ・ノブの上Ｇこ載せ
て封止材で封止したことにより、透光性キャップに汚染
物質が付着することがなくなり、半導体ペレットの特性
が損なわれることを防止できる。[Effect] (l) A sealing member having an opening in the center and having a sealant attached to the back side of the peripheral part was placed on the translucent cap knob and sealed with the sealant. This prevents contaminants from adhering to the light-transmitting cap and prevents the characteristics of the semiconductor pellet from being impaired.
（２）、特別な汚染物質付着防止手段が不要であるので
、製造コストを大巾に安価なものとすることができる。(2) Since no special means for preventing adhesion of contaminants is required, manufacturing costs can be significantly reduced.
以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.
たとえば、封止材としては低融点ガラスの他に有機封止
材料等を用いることができる。For example, as the sealing material, an organic sealing material or the like can be used in addition to low-melting glass.
また、封止用リッドの材料もセラミック以外のものを用
いることができる。Furthermore, the material of the sealing lid may also be other than ceramic.
さらに、透光性キャンプも透明ガラスの他にプラスチッ
ク等の透光性材料で作ることができる。Furthermore, the light-transmitting camp can also be made of a light-transmitting material such as plastic in addition to transparent glass.
［利用分野］
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるホトセン号用の半導
体装置に適用した場合について説明したが、それに限定
されるものではなく、たとえば、それ以外の用途に用い
られる半導体装置にも広く適用することができる。[Field of Application] In the above explanation, the invention made by the present inventor was mainly applied to the semiconductor device for the Photosen, which is the field of application that formed the background of the invention, but the invention is not limited to this, for example. , it can be widely applied to semiconductor devices used for other purposes.
第１図は本発明の実施例１である半導体装置の斜視図、
第２図はその透明ガラスキャンプの裏面側から見た斜視
図、
第３図（ａｌ、（ｂ）はそれぞれ封止用リッドの裏面側
から見た斜視図とその断面図、
第４図は本実施例１の半導体装置の拡大断面図、第５図
は本発明の実施例２による半導体装置の拡大断面図であ
る。
１・・・パ、７ケージのベース、２・・・キャビティ、
３・・・半導体ペレット、４・・・ワイヤ、６・・・透
明ガラスキャップ（透光性キャンプ）、７・・・封止用
リッド（封止部材）、８・・・フ第 １ 図
第 ３
第 ４ 図
第 ２ 図
図
（Ａ）
び
第 ５ 図FIG. 1 is a perspective view of a semiconductor device according to Embodiment 1 of the present invention, FIG. 2 is a perspective view of the transparent glass camp seen from the back side, and FIGS. 3 (al) and (b) are sealing lids. 4 is an enlarged sectional view of the semiconductor device according to the first embodiment of the present invention, and FIG. 5 is an enlarged sectional view of the semiconductor device according to the second embodiment of the present invention. 1 ... Pa, 7 cage base, 2... cavity,
3... Semiconductor pellet, 4... Wire, 6... Transparent glass cap (light-transmitting camp), 7... Sealing lid (sealing member), 8... F Fig. 1 3 Figure 4 Figure 2 Figure (A) and Figure 5
Claims (1)
ージのベースを透光性キャップで封止する半導体装置に
おいて、中央部に開口を有しかつ周辺部裏面に封止材を
付着させた封止部材を透光性キャップの上に乗せて前記
封止材で封止してなることを特徴とする半導体装置。 ２、封止材が封止部材の周辺部裏面に焼結された低融点
ガラスよりケることを特徴とする特許請求の範囲第１項
記載の半導体装置。[Claims] 1. A semiconductor device in which the base of a package in which a semiconductor pellet is attached in a cavity is sealed with a transparent cap, which has an opening in the center and has a sealing material attached to the back surface of the peripheral part. What is claimed is: 1. A semiconductor device comprising: a sealing member placed on a translucent cap and sealed with the sealing material. 2. The semiconductor device according to claim 1, wherein the sealing material is made of low melting point glass sintered on the back surface of the peripheral portion of the sealing member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58097818A JPS59224145A (en) | 1983-06-03 | 1983-06-03 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58097818A JPS59224145A (en) | 1983-06-03 | 1983-06-03 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59224145A true JPS59224145A (en) | 1984-12-17 |
Family
ID=14202319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58097818A Pending JPS59224145A (en) | 1983-06-03 | 1983-06-03 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59224145A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS622251U (en) * | 1985-06-20 | 1987-01-08 | ||
| JPH01235260A (en) * | 1988-03-15 | 1989-09-20 | Rohm Co Ltd | Manufacture of cap for optical element |
| WO2005119756A1 (en) * | 2004-06-04 | 2005-12-15 | Melexis Nv | Semiconductor package with transparent lid |
-
1983
- 1983-06-03 JP JP58097818A patent/JPS59224145A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS622251U (en) * | 1985-06-20 | 1987-01-08 | ||
| JPH01235260A (en) * | 1988-03-15 | 1989-09-20 | Rohm Co Ltd | Manufacture of cap for optical element |
| WO2005119756A1 (en) * | 2004-06-04 | 2005-12-15 | Melexis Nv | Semiconductor package with transparent lid |
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