JPH06120366A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH06120366A
JPH06120366A JP4292247A JP29224792A JPH06120366A JP H06120366 A JPH06120366 A JP H06120366A JP 4292247 A JP4292247 A JP 4292247A JP 29224792 A JP29224792 A JP 29224792A JP H06120366 A JPH06120366 A JP H06120366A
Authority
JP
Japan
Prior art keywords
base
moisture
semiconductor device
groove
upper lid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4292247A
Other languages
Japanese (ja)
Other versions
JP3513168B2 (en
Inventor
Hideo Yamanaka
英雄 山中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP29224792A priority Critical patent/JP3513168B2/en
Publication of JPH06120366A publication Critical patent/JPH06120366A/en
Application granted granted Critical
Publication of JP3513168B2 publication Critical patent/JP3513168B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To make hygroscopicity better and to prevent the generation of dust by surrounding a semiconductor element from above putting a top lid on a base, and providing a hygroscopic region having a hygroscopic groove at a putting part for the top lid on the base. CONSTITUTION:A semiconductor element 10 is surrounded from above by putting a top lid 3 on a base 2. A sealing agent 41 is applied to a putting part 4 for the top lid 3 on the base 2, and the hollow space is made into a sealed state. In addition, a hygroscopic region S having a groove 5 is provided at the putting part 4 for the top lid 3 on the base 3. In this way, moisture trying to enter the hollow space from outside is held by providing the hygroscopic region S at the putting part 4, and it becomes possible to protect the semiconductor element 10 put in the hollow space from moisture. Accordingly, it becomes possible to provide a semiconductor device easily having better hygroscopicity and free the generation of dust.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、基台と上蓋との間に半
導体素子を収納して成る中空パッケージの半導体装置に
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hollow package semiconductor device in which a semiconductor element is housed between a base and an upper lid.

【0002】[0002]

【従来の技術】IC(集積回路)やCCD(Charg
e Coupled Device)等の半導体装置の
パッケージとして、セラミックスやプラスチック等を用
いた中空パッケージが用いられている。この中空パッケ
ージから成る半導体装置を図7の断面図に基づいて説明
する。すなわち、この半導体装置1は、略中央部に半導
体素子10を搭載するためのセラミックスやプラスチッ
ク等から成る基台2と、この基台2上で半導体素子10
を上方から包囲する状態で載置される上蓋3とから構成
されるもので、基台2と上蓋3との間に中空空間が設け
られ、この中空空間内に半導体素子10が配置されてい
る。
2. Description of the Related Art ICs (integrated circuits) and CCDs (Charges)
As a package of a semiconductor device such as e Coupled Device, a hollow package made of ceramics or plastic is used. A semiconductor device including the hollow package will be described with reference to the sectional view of FIG. That is, the semiconductor device 1 includes a base 2 made of ceramics, plastics or the like for mounting the semiconductor element 10 in a substantially central portion, and the semiconductor element 10 on the base 2.
The upper lid 3 is mounted so as to surround the upper lid 3. A hollow space is provided between the base 2 and the upper lid 3, and the semiconductor element 10 is arranged in the hollow space. .

【0003】基台2と上蓋3との載置部分4には、樹脂
シーラーや紫外線照射硬化型接着剤等から成る封止剤4
1が塗布されており、基台2と上蓋3との間の中空空間
内に配置された半導体素子10、および半導体素子10
とリードフレーム7とを配線するボンディングワイヤー
8を密封状態にしている。
On the mounting portion 4 between the base 2 and the upper lid 3, a sealant 4 made of a resin sealer, an ultraviolet irradiation curing adhesive or the like is used.
1 is applied and is arranged in the hollow space between the base 2 and the upper lid 3, and the semiconductor element 10
The bonding wire 8 that connects the lead frame 7 and the lead frame 7 is sealed.

【0004】IC等から成る半導体装置1の場合には、
基台2および上蓋3ともにセラミックスまたはプラスチ
ック等が用いられ、CCD等の光学系部品から成る半導
体装置1の場合には、セラミックスまたはプラスチック
等の基台2と、光の透過率の高い透明プラスチックやガ
ラス等の上蓋3が用いられている。
In the case of the semiconductor device 1 including an IC or the like,
In the case of the semiconductor device 1 in which both the base 2 and the top cover 3 are made of ceramics or plastic, and the semiconductor device 1 is composed of an optical system component such as CCD, the base 2 made of ceramics or plastic and a transparent plastic having a high light transmittance are used. An upper lid 3 made of glass or the like is used.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、このよ
うな半導体装置には次のような問題がある。すなわち、
基台と上蓋との載置部分から湿気が侵入したり、載置部
分に塗布した封止剤が湿気を透過して中空空間内に入り
込み、基台や上蓋内面での結露発生につながる。特に、
CCD等の光学系部品から成る半導体装置において、こ
のような結露が発生すると、光の透過率が低下して画像
等に悪影響を及ぼしてしまう。また、中空空間内に湿気
が侵入すると、配置された半導体素子等の誤動作の原因
となる。
However, such a semiconductor device has the following problems. That is,
Moisture may enter from the mounting portion of the base and the upper lid, or the sealant applied to the mounting portion may permeate the moisture and enter the hollow space, leading to dew condensation on the inner surface of the base and the upper lid. In particular,
When such dew condensation occurs in a semiconductor device including an optical system component such as a CCD, the transmittance of light is reduced and the image or the like is adversely affected. Further, if moisture penetrates into the hollow space, it may cause malfunction of the semiconductor element or the like arranged therein.

【0006】このため、特開昭56−144561号に
示された如く、載置部分の形状を斜めやくさび型にして
湿気の侵入経路を長くしたり、湿気を透過しにくい封止
剤を用いたり、また封止剤の厚さを極力薄くしたりする
ことが考えられているが、いずれにおいてもこの程度で
は不十分である。さらに、中空空間内に水分吸湿剤を載
置することも考えられるが、この場合、吸湿能力が向上
する反面、水分吸湿剤からのダストの発生や、水分吸湿
剤を載置する場所の問題、作業性等の問題から現実的で
ない。よって、本発明は吸湿能力が高く、ダストの発生
がない半導体装置を提供することを目的とする。
For this reason, as shown in Japanese Patent Laid-Open No. 56-144561, the mounting portion is formed into a slanted or wedge shape to lengthen the moisture invasion path or to use a sealing agent which does not easily transmit moisture. Alternatively, it has been considered to make the thickness of the sealant as thin as possible, but in any case, this level is insufficient. Further, it is also possible to place a moisture absorbent in the hollow space, in this case, while moisture absorption capacity is improved, the generation of dust from the moisture absorbent, the problem of the place to place the moisture absorbent, It is not realistic due to workability issues. Therefore, an object of the present invention is to provide a semiconductor device which has a high moisture absorption capacity and does not generate dust.

【0007】[0007]

【課題を解決するための手段】本発明は、このような課
題を解決するために成された半導体装置である。すなわ
ち、この半導体装置は、基台の略中央に半導体素子を搭
載し、この基台上に上蓋を載置して半導体素子を上方か
ら包囲するもので、基台と上蓋との載置部分に吸湿用の
溝を備えた吸湿領域を設けるものである。また、この吸
湿用の溝内に水分吸湿剤を配置したり、この水分吸湿剤
を溝内において封止剤で覆うものでもある。
The present invention is a semiconductor device made to solve the above problems. That is, this semiconductor device is one in which a semiconductor element is mounted in the approximate center of a base, and an upper lid is placed on the base to surround the semiconductor element from above. A moisture absorption region having a groove for moisture absorption is provided. Further, a moisture absorbent may be arranged in the moisture absorbing groove, or the moisture absorbent may be covered with a sealant in the groove.

【0008】[0008]

【作用】基台と上蓋との載置部分に設けられた吸湿領域
により、外部から侵入する湿気をこの吸湿領域にて遮断
することになる。特に、吸湿領域に備えた溝で湿気を保
持することになるとともに、溝内に配置した水分吸湿剤
にて、この溝内に保持される湿気を吸収することにな
る。また、水分吸湿剤を封止剤にて覆うことで、吸湿領
域における吸湿能力がより向上するとともに、水分吸湿
剤から発生するダストが封止されて溝から中空空間内に
散乱しなくなる。
With the moisture absorption region provided in the mounting portion of the base and the upper lid, moisture invading from the outside is blocked by this moisture absorption region. In particular, the moisture is held in the groove provided in the moisture absorption region, and the moisture held in the groove is absorbed by the moisture absorbent arranged in the groove. In addition, by covering the moisture absorbent with the sealant, the moisture absorption capacity in the moisture absorption region is further improved, and dust generated from the moisture absorbent is sealed and does not scatter from the groove into the hollow space.

【0009】[0009]

【実施例】以下に、本発明の半導体装置の実施例を図に
基づいて説明する。図1は、本発明の半導体装置1を説
明する断面図である。すなわち、この半導体装置1は、
略中央に半導体素子10を搭載するためにセラミックス
またはプラスチック等から形成された基台2と、この基
台2上で半導体素子10を上方から包囲する状態に載置
された上蓋3とから構成されており、基台2と上蓋3と
の間に設けられる中空空間に半導体素子10が配置され
るものである。
Embodiments of the semiconductor device of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view illustrating a semiconductor device 1 of the present invention. That is, the semiconductor device 1 is
It is composed of a base 2 formed of ceramics or plastics for mounting the semiconductor element 10 at substantially the center thereof, and an upper lid 3 placed on the base 2 so as to surround the semiconductor element 10 from above. The semiconductor element 10 is arranged in a hollow space provided between the base 2 and the upper lid 3.

【0010】基台2と上蓋3との載置部分4には、樹脂
シーラーや紫外線照射硬化型接着剤等から成る封止剤4
1が塗布されており、中空空間内を密封状態にしてい
る。すなわち、この中空空間内に配置された半導体素子
10、およびこの半導体素子10とリードフレーム7と
を配線するボンディングワイヤー8とがこの中空空間内
で封止状態となっている。
On the mounting portion 4 between the base 2 and the upper lid 3, a sealant 4 made of a resin sealer, an ultraviolet irradiation curing adhesive or the like is used.
1 is applied, and the inside of the hollow space is sealed. That is, the semiconductor element 10 arranged in the hollow space and the bonding wire 8 for wiring the semiconductor element 10 and the lead frame 7 are sealed in the hollow space.

【0011】さらに、この基台2と上蓋3との載置部分
4には、溝5を備えた吸湿領域Sが設けられている。例
えば、載置部分4の基台2側に溝5が設けられ、この上
に上蓋3が載置されている。また、必要に応じて上蓋3
に溝5と嵌合するような凸部を設けてもよい。このよう
に載置部分4に吸湿領域Sを設けることで、外部から中
空空間内に侵入しようとする湿気を保持することにな
り、中空空間内に配置された半導体素子10を湿気から
保護することができる。
Further, the mounting portion 4 of the base 2 and the upper lid 3 is provided with a moisture absorption region S having a groove 5. For example, the groove 5 is provided on the base 2 side of the mounting portion 4, and the upper lid 3 is mounted thereon. Also, if necessary, the upper lid 3
You may provide the convex part which fits in the groove | channel 5. By providing the moisture absorption region S in the mounting portion 4 in this way, moisture that tries to enter the hollow space from the outside is retained, and the semiconductor element 10 arranged in the hollow space is protected from moisture. You can

【0012】また、この溝5内に水分吸湿剤6を配置し
てもよく、吸湿領域Sで保持した湿気をこの水分吸湿剤
6にて吸収することになる。水分吸湿剤6としては、ダ
ストの発生がなく成形性の良いシート状のものが望まし
く、溝5からはみ出ないような形状にして配置すればよ
い。さらに、溝5内に配置された水分吸湿剤6を封止剤
41にて覆う状態にしてもよい。このようにすれば、水
分吸湿剤6を溝5内に確実に配置できるとともに、吸湿
領域Sにおける水分の吸湿をこの封止剤41と水分吸湿
剤6との両方で行うことができるため吸湿能力が向上す
る。しかも、水分吸湿剤6から発生するダストが溝5内
に封止されて中空空間内に散乱しなくなる。
Further, the moisture absorbent 6 may be disposed in the groove 5, and the moisture retained in the moisture absorption region S is absorbed by the moisture absorbent 6. As the moisture absorbent 6, a sheet-like material which does not generate dust and has good moldability is desirable, and the moisture absorbent 6 may be arranged so as not to protrude from the groove 5. Furthermore, the moisture absorbent 6 arranged in the groove 5 may be covered with the sealant 41. By doing so, the moisture absorbent 6 can be reliably arranged in the groove 5, and moisture in the moisture absorbing region S can be absorbed by both the sealant 41 and the moisture absorbent 6, so that the moisture absorbing ability is improved. Is improved. Moreover, the dust generated from the moisture absorbent 6 is sealed in the groove 5 and does not scatter in the hollow space.

【0013】次に、本発明の半導体装置1の他の例を図
2〜図6の断面図に基づいて説明する。先ず、図2に示
す半導体装置1は、載置部分4に設けられた吸湿領域S
の溝5を中空として、この中に水分吸湿剤6を配置した
ものである。このため、載置部分4のうち基台2の上蓋
3との接触部分にのみ封止剤41が塗布された状態とな
っている。外部からの湿気が載置部分4から侵入した場
合には、この湿気が中空の溝5内に溜まり、水分吸湿剤
6にて吸収されることになる。このような半導体装置1
では、吸湿効果を発揮しつつ封止剤41を基台2と上蓋
3との接続に必要な量のみにすることができるため、特
に半導体装置1を大量生産する場合において大幅なコス
トダウンを図ることができる。
Next, another example of the semiconductor device 1 of the present invention will be described with reference to the sectional views of FIGS. First, in the semiconductor device 1 shown in FIG. 2, the moisture absorption region S provided in the mounting portion 4 is
The groove 5 is made hollow, and the moisture absorbent 6 is placed therein. Therefore, the sealant 41 is applied only to the portion of the mounting portion 4 that is in contact with the upper lid 3 of the base 2. When moisture from the outside enters from the mounting portion 4, this moisture is accumulated in the hollow groove 5 and is absorbed by the moisture absorbent 6. Such a semiconductor device 1
Then, since the amount of the sealing agent 41 required for connecting the base 2 and the upper lid 3 can be exerted while exhibiting the moisture absorption effect, a significant cost reduction is achieved especially when the semiconductor devices 1 are mass-produced. be able to.

【0014】また、図3に示す半導体装置1は、吸湿領
域Sの溝5が基台2側と上蓋3側に渡って設けられたも
のである。これにより、溝5の容積が増加して大きな水
分吸湿剤6を配置することができるため、吸湿能力が増
加することになる。また、さらに吸湿能力を増加させた
い場合には、この溝5内に封止剤41を充填するように
すればよい。
In the semiconductor device 1 shown in FIG. 3, the groove 5 of the moisture absorption region S is provided over the base 2 side and the upper lid 3 side. As a result, the volume of the groove 5 is increased and a large moisture absorbent 6 can be placed, so that the moisture absorption capacity is increased. If it is desired to further increase the moisture absorption capacity, the groove 5 may be filled with the sealant 41.

【0015】次に、図4に示す半導体装置1は、吸湿領
域Sの溝5を上蓋3側に設け、この溝5内に水分吸湿剤
6を配置したものである。基台2の材質としてセラミッ
クス等の硬質材料を用いた場合には、基台2側に溝5を
形成するのが困難な場合があり、CCD等の光学系部品
から成る半導体装置1では、上蓋3として透明プラスチ
ックを用いる場合があるため、溝5を上蓋3側に形成し
た方が容易である。この場合、予め封止剤41にて水分
吸湿剤6を溝5内に埋め込んでおけば、基台2と上蓋3
との取り付けが行いやすくなる。
Next, in the semiconductor device 1 shown in FIG. 4, the groove 5 of the moisture absorption region S is provided on the upper lid 3 side, and the moisture absorbent 6 is arranged in the groove 5. When a hard material such as ceramics is used as the material of the base 2, it may be difficult to form the groove 5 on the side of the base 2. Therefore, in the semiconductor device 1 including an optical system component such as a CCD, the upper lid is used. Since a transparent plastic may be used as the material 3, it is easier to form the groove 5 on the upper lid 3 side. In this case, if the moisture absorbent 6 is embedded in the groove 5 with the sealant 41 in advance, the base 2 and the upper lid 3
It becomes easy to install with.

【0016】また、図5と図6に示す半導体装置1は、
他のパッケージ形状に適応したものである。図5に示す
半導体装置1は、リードフレーム7が基台2内に埋設さ
れて側面から導出したパッケージ形状であり、また図6
に示す半導体装置1は、リード7aが基台2の下面から
下方に向けて導出したパッケージ形状である。いずれの
場合であっても、基台2と上蓋3との載置部分4に溝5
を備えた吸湿領域Sが設けられており、この溝5内に水
分吸湿剤6が配置されている。これらのパッケージ形状
の半導体装置1では、基台2の材質として主にプラスチ
ックが用いられており、基台2の形成時に使用する金型
内にリードフレーム7またはリード7aを配置して一体
的に形成している。この際、金型に溝5と対応した形状
を設けておけば、基台2の形成と同時に溝5を形成する
ことができることになる。
The semiconductor device 1 shown in FIG. 5 and FIG.
It is adapted to other package shapes. The semiconductor device 1 shown in FIG. 5 has a package shape in which the lead frame 7 is embedded in the base 2 and is led out from the side surface.
The semiconductor device 1 shown in (1) has a package shape in which the leads 7a are led out downward from the lower surface of the base 2. In any case, the groove 5 is formed in the mounting portion 4 of the base 2 and the upper lid 3.
Is provided, and the moisture absorbent 6 is arranged in the groove 5. In these package-shaped semiconductor devices 1, plastic is mainly used as the material of the base 2, and the lead frame 7 or the leads 7a are arranged in a mold used when the base 2 is formed to be integrated. Is forming. At this time, if the mold is provided with a shape corresponding to the groove 5, the groove 5 can be formed simultaneously with the formation of the base 2.

【0017】なお、これらの実施例において、吸湿領域
Sを載置部分4の一部分に設けてもよいが、基台2と上
蓋3との間に設けられる中空空間を囲む状態に溝5を形
成して吸湿領域Sを設けるのが望ましく、吸湿能力を最
も高めることができる。また、本実施例では基台2と上
蓋3との接続を封止剤41を用いて行ったが、本発明は
これに限定されず、例えば超音波溶着やレーザ溶接を用
いて接続してもよい。
In these embodiments, the moisture absorption area S may be provided in a part of the mounting portion 4, but the groove 5 is formed so as to surround the hollow space provided between the base 2 and the upper lid 3. It is desirable to provide the moisture absorption region S to maximize the moisture absorption capacity. Further, in the present embodiment, the base 2 and the upper lid 3 were connected by using the sealant 41, but the present invention is not limited to this, and may be connected, for example, by ultrasonic welding or laser welding. Good.

【0018】[0018]

【発明の効果】以上説明したように、本発明の半導体装
置によれば次のような効果がある。すなわち、基台と上
蓋との載置部分に吸湿領域が設けられているため、外部
から中空空間内に湿気が侵入しない。このため、湿気に
よる半導体素子の誤動作を低減できるとともに、湿気に
よる基台や上蓋内面への結露がないため、特にCCD等
の光学系部品から成る半導体装置においては、光の透過
率が低下することがなく、良好な画像を得ることができ
る。また、水分吸湿剤を溝内に配置することで、水分吸
湿剤から発生するダストが中空空間内に散乱しないた
め、半導体素子にダストが付着することがないととも
に、水分吸湿剤を用いた場合における半導体装置の組立
作業性が向上することになる。したがって、吸湿能力が
高く、しかもダストの発生がない半導体装置を容易に提
供することが可能となる。特に、基台と上蓋の材質とし
てプラスチックを使用して大量生産を図る半導体装置に
おいて本発明は有効なものとなる。
As described above, the semiconductor device of the present invention has the following effects. That is, since the moisture absorption area is provided in the mounting portion of the base and the upper lid, moisture does not enter the hollow space from the outside. Therefore, malfunction of the semiconductor element due to moisture can be reduced, and since there is no dew condensation on the inner surface of the base or the upper lid due to moisture, the light transmittance is reduced particularly in a semiconductor device including an optical system component such as CCD. And a good image can be obtained. Further, by disposing the moisture absorbent in the groove, since the dust generated from the moisture absorbent does not scatter in the hollow space, the dust does not adhere to the semiconductor element, and in the case of using the moisture absorbent. Assembling workability of the semiconductor device is improved. Therefore, it is possible to easily provide a semiconductor device which has a high hygroscopic capacity and does not generate dust. In particular, the present invention is effective in a semiconductor device in which plastic is used as the material of the base and the upper lid for mass production.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の半導体装置を説明する断面図である。FIG. 1 is a cross-sectional view illustrating a semiconductor device of the present invention.

【図2】本発明の他の実施例を説明する断面図(その
1)である。
FIG. 2 is a sectional view (No. 1) for explaining another embodiment of the present invention.

【図3】本発明の他の実施例を説明する断面図(その
2)である。
FIG. 3 is a sectional view (No. 2) for explaining another embodiment of the present invention.

【図4】本発明の他の実施例を説明する断面図(その
3)である。
FIG. 4 is a sectional view (No. 3) for explaining another embodiment of the present invention.

【図5】本発明の他の実施例を説明する断面図(その
4)である。
FIG. 5 is a sectional view (No. 4) for explaining another embodiment of the present invention.

【図6】本発明の他の実施例を説明する断面図(その
5)である。
FIG. 6 is a sectional view (5) for explaining another embodiment of the present invention.

【図7】半導体装置の従来例を説明する断面図である。FIG. 7 is a cross-sectional view illustrating a conventional example of a semiconductor device.

【符号の説明】[Explanation of symbols]

1 半導体装置 2 基台 3 上蓋 4 載置部分 5 溝 6 水分吸湿剤 7 リードフレーム 8 ボンディングワイヤー 10 半導体素子 41 封止剤 S 吸湿領域 1 Semiconductor Device 2 Base 3 Upper Lid 4 Mounting Part 5 Groove 6 Moisture Absorber 7 Lead Frame 8 Bonding Wire 10 Semiconductor Element 41 Sealant S Moisture Absorption Area

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 略中央に半導体素子が搭載される基台
と、 前記基台上で前記半導体素子を上方から包囲する状態で
載置される上蓋とから成る半導体装置において、 前記基台と前記上蓋との載置部分に吸湿用の溝を備えた
吸湿領域が設けられていることを特徴とする半導体装
置。
1. A semiconductor device comprising a base on which a semiconductor element is mounted substantially in the center, and an upper lid mounted on the base in a state of surrounding the semiconductor element from above, wherein the base and the A semiconductor device, wherein a moisture absorption region having a groove for moisture absorption is provided in a mounting portion with the upper lid.
【請求項2】 前記吸湿用の溝内に水分吸湿剤が配置さ
れていることを特徴とする請求項1記載の半導体装置。
2. The semiconductor device according to claim 1, wherein a moisture absorbent is arranged in the moisture absorbing groove.
【請求項3】 前記吸湿用の溝内に配置された水分吸湿
剤が封止剤にて覆われていることを特徴とする請求項2
記載の半導体装置。
3. The moisture absorbing agent arranged in the moisture absorbing groove is covered with a sealant.
The semiconductor device described.
JP29224792A 1992-10-06 1992-10-06 Semiconductor device Expired - Fee Related JP3513168B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29224792A JP3513168B2 (en) 1992-10-06 1992-10-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29224792A JP3513168B2 (en) 1992-10-06 1992-10-06 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2001181257A Division JP2002043450A (en) 2001-06-15 2001-06-15 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH06120366A true JPH06120366A (en) 1994-04-28
JP3513168B2 JP3513168B2 (en) 2004-03-31

Family

ID=17779357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29224792A Expired - Fee Related JP3513168B2 (en) 1992-10-06 1992-10-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JP3513168B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5898571A (en) * 1997-04-28 1999-04-27 Lsi Logic Corporation Apparatus and method for clip-on attachment of heat sinks to encapsulated semiconductor packages
US5977622A (en) * 1997-04-25 1999-11-02 Lsi Logic Corporation Stiffener with slots for clip-on heat sink attachment
US6011304A (en) * 1997-05-05 2000-01-04 Lsi Logic Corporation Stiffener ring attachment with holes and removable snap-in heat sink or heat spreader/lid
JP2008078668A (en) * 2007-09-28 2008-04-03 Kyocera Corp Package for housing solid-state imaging sensor and imaging device
JP2009290023A (en) * 2008-05-29 2009-12-10 Sumitomo Bakelite Co Ltd Semiconductor device
WO2015079811A1 (en) * 2013-11-29 2015-06-04 株式会社日立エルジーデータストレージ Seal structure for video-image output device
CN107408536A (en) * 2015-03-11 2017-11-28 田中贵金属工业株式会社 Electronic component sealing cap

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01161736A (en) * 1987-12-17 1989-06-26 Nec Corp Package for semiconductor device
JPH0485859A (en) * 1990-07-26 1992-03-18 Mitsui Petrochem Ind Ltd Airtightly sealed package and bonding member

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01161736A (en) * 1987-12-17 1989-06-26 Nec Corp Package for semiconductor device
JPH0485859A (en) * 1990-07-26 1992-03-18 Mitsui Petrochem Ind Ltd Airtightly sealed package and bonding member

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5977622A (en) * 1997-04-25 1999-11-02 Lsi Logic Corporation Stiffener with slots for clip-on heat sink attachment
US5898571A (en) * 1997-04-28 1999-04-27 Lsi Logic Corporation Apparatus and method for clip-on attachment of heat sinks to encapsulated semiconductor packages
US6011304A (en) * 1997-05-05 2000-01-04 Lsi Logic Corporation Stiffener ring attachment with holes and removable snap-in heat sink or heat spreader/lid
JP2008078668A (en) * 2007-09-28 2008-04-03 Kyocera Corp Package for housing solid-state imaging sensor and imaging device
JP4646960B2 (en) * 2007-09-28 2011-03-09 京セラ株式会社 Package for storing solid-state imaging device and imaging apparatus
JP2009290023A (en) * 2008-05-29 2009-12-10 Sumitomo Bakelite Co Ltd Semiconductor device
WO2015079811A1 (en) * 2013-11-29 2015-06-04 株式会社日立エルジーデータストレージ Seal structure for video-image output device
CN107408536A (en) * 2015-03-11 2017-11-28 田中贵金属工业株式会社 Electronic component sealing cap

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